Bin Lu

Person

Watertown, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
III-nitride diode with a modified access region
- Patent number 12,080,807
- Issue date Sep 3, 2024
- Finwave Semiconductor, Inc.
- Dongfei Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor with a modified drain access region
- Patent number 11,876,130
- Issue date Jan 16, 2024
- Finwave Semiconductor, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride transistor with a cap layer for RF operation
- Patent number 11,695,052
- Issue date Jul 4, 2023
- Finwave Semiconductor, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with a stress layer
- Patent number 11,349,003
- Issue date May 31, 2022
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure having buried island regions
- Patent number 10,566,192
- Issue date Feb 18, 2020
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing leakage current in semiconductor devices
- Patent number 9,911,813
- Issue date Mar 6, 2018
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-plate structures for semiconductor devices
- Patent number 9,911,817
- Issue date Mar 6, 2018
- CAMBRIDGE ELECTRONICS, INC.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitively-coupled field-plate structures for semiconductor devices
- Patent number 9,887,268
- Issue date Feb 6, 2018
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid structure with separate controls
- Patent number 9,754,937
- Issue date Sep 5, 2017
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Passivation technique for wide bandgap semiconductor devices
- Patent number 9,634,111
- Issue date Apr 25, 2017
- Massachusetts Institute of Technology
- Feng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride semiconductors with recess regions and methods of manuf...
- Patent number 9,614,069
- Issue date Apr 4, 2017
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and recess formation etch technique
- Patent number 9,570,600
- Issue date Feb 14, 2017
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a spacer layer
- Patent number 9,536,984
- Issue date Jan 3, 2017
- CAMBRIDGE ELECTRONICS, INC.
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and etch technique for monolithic integrati...
- Patent number 9,502,535
- Issue date Nov 22, 2016
- CAMBRIDGE ELECTRONICS, INC.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field management for a group III-nitride semiconductor device
- Patent number 9,455,342
- Issue date Sep 27, 2016
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode having trenches in a semiconductor region
- Patent number 9,293,538
- Issue date Mar 22, 2016
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a recessed electrode structure
- Patent number 9,041,003
- Issue date May 26, 2015
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode nitride transistor
- Patent number 8,759,876
- Issue date Jun 24, 2014
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate normally-off nitride transistors
- Patent number 8,587,031
- Issue date Nov 19, 2013
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
III-NITRIDE TRANSISTOR WITH TOP AND BOTTOM CAP LAYERS WITH ETCH STOP
- Publication number 20250098274
- Publication date Mar 20, 2025
- Finwave Semiconductor, Inc.
- Dongfei Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR WITH ELECTRICALLY CONNECTED P-TYPE LAYER IN...
- Publication number 20230043810
- Publication date Feb 9, 2023
- Finwave Semiconductor, Inc.
- Dongfei Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR WITH NON-UNIFORM CHANNEL REGIONS
- Publication number 20220216304
- Publication date Jul 7, 2022
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Diode With A Modified Access Region
- Publication number 20210399145
- Publication date Dec 23, 2021
- Cambridge Electronics, Inc.
- Dongfei Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor With A Cap Layer For RF Operation
- Publication number 20210265477
- Publication date Aug 26, 2021
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor With A Modified Drain Access Region
- Publication number 20210167202
- Publication date Jun 3, 2021
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Structure With A Stress Layer
- Publication number 20200365394
- Publication date Nov 19, 2020
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR DEVICE WITH A THIN BARRIER
- Publication number 20200357905
- Publication date Nov 12, 2020
- Cambridge Electronics Inc.
- BIN LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20170358651
- Publication date Dec 14, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID STRUCTURE WITH SEPARATE CONTROLS
- Publication number 20170256538
- Publication date Sep 7, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTORS WITH RECESS REGIONS AND METHODS OF MANUF...
- Publication number 20170092752
- Publication date Mar 30, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20170018617
- Publication date Jan 19, 2017
- Cambridge Electronics, Inc.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20160365437
- Publication date Dec 15, 2016
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER
- Publication number 20160351564
- Publication date Dec 1, 2016
- Cambridge Electronics, Inc.
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATI...
- Publication number 20160300835
- Publication date Oct 13, 2016
- Cambridge Electronics, Inc.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES
- Publication number 20160133710
- Publication date May 12, 2016
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND RECESS FORMATION ETCH TECHNIQUE
- Publication number 20160064539
- Publication date Mar 3, 2016
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE HAVING BURIED ISLAND REGIONS
- Publication number 20150349124
- Publication date Dec 3, 2015
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NUCLEATION AND BUFFER LAYERS FOR GROUP III-NITRIDE BASED SEMICONDUC...
- Publication number 20150349064
- Publication date Dec 3, 2015
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES
- Publication number 20150318360
- Publication date Nov 5, 2015
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20150144957
- Publication date May 28, 2015
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION TECHNIQUE FOR WIDE BANDGAP SEMICONDUCTOR DEVICES
- Publication number 20150091061
- Publication date Apr 2, 2015
- Massachusetts Institute of Technology
- Feng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE
- Publication number 20140070228
- Publication date Mar 13, 2014
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE
- Publication number 20130099247
- Publication date Apr 25, 2013
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-GATE NORMALLY-OFF NITRIDE TRANSISTORS
- Publication number 20130020614
- Publication date Jan 24, 2013
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE NITRIDE TRANSISTOR
- Publication number 20100084688
- Publication date Apr 8, 2010
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

III-nitride diode with a modified access region

III-nitride transistor with a modified drain access region

III-Nitride transistor with a cap layer for RF operation

Transistor structure with a stress layer

Transistor structure having buried island regions

Reducing leakage current in semiconductor devices

Field-plate structures for semiconductor devices

Capacitively-coupled field-plate structures for semiconductor devices

Hybrid structure with separate controls

Passivation technique for wide bandgap semiconductor devices

III-Nitride semiconductors with recess regions and methods of manuf...

Semiconductor structure and recess formation etch technique

Semiconductor structure with a spacer layer

Semiconductor structure and etch technique for monolithic integrati...

Electric field management for a group III-nitride semiconductor device

Diode having trenches in a semiconductor region

Semiconductor devices having a recessed electrode structure

Enhancement-mode nitride transistor

Dual-gate normally-off nitride transistors

Patents Applicationslast 30 patents

III-NITRIDE TRANSISTOR WITH TOP AND BOTTOM CAP LAYERS WITH ETCH STOP

III-NITRIDE TRANSISTOR WITH ELECTRICALLY CONNECTED P-TYPE LAYER IN...

III-NITRIDE TRANSISTOR WITH NON-UNIFORM CHANNEL REGIONS

III-Nitride Diode With A Modified Access Region

III-Nitride Transistor With A Cap Layer For RF Operation

III-Nitride Transistor With A Modified Drain Access Region

Transistor Structure With A Stress Layer

III-NITRIDE TRANSISTOR DEVICE WITH A THIN BARRIER

CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES

HYBRID STRUCTURE WITH SEPARATE CONTROLS

III-NITRIDE SEMICONDUCTORS WITH RECESS REGIONS AND METHODS OF MANUF...

FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES

ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER

SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATI...

REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND RECESS FORMATION ETCH TECHNIQUE

TRANSISTOR STRUCTURE HAVING BURIED ISLAND REGIONS

NUCLEATION AND BUFFER LAYERS FOR GROUP III-NITRIDE BASED SEMICONDUC...

REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES

ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE

PASSIVATION TECHNIQUE FOR WIDE BANDGAP SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE

SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE

DUAL-GATE NORMALLY-OFF NITRIDE TRANSISTORS

ENHANCEMENT-MODE NITRIDE TRANSISTOR