Binghua Hu

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation structure for IC with epi regions sharing the same tank
- Patent number 12,205,944
- Issue date Jan 21, 2025
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical deep trench and deep trench island based deep n-type well...
- Patent number 11,869,986
- Issue date Jan 9, 2024
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an integrated deep trench capacitor havin...
- Patent number 11,742,436
- Issue date Aug 29, 2023
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection device with deep trench isolation islands
- Patent number 11,658,176
- Issue date May 23, 2023
- Texas Instruments Incorporated
- Zaichen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation with segmented deep trench
- Patent number 11,626,317
- Issue date Apr 11, 2023
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for IC with epi regions sharing the same tank
- Patent number 11,444,075
- Issue date Sep 13, 2022
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of drain extended transistor field oxide
- Patent number 11,374,124
- Issue date Jun 28, 2022
- Texas Instruments Incorporated
- James Robert Todd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an integrated deep trench capacitor havin...
- Patent number 11,222,986
- Issue date Jan 11, 2022
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with deep trench isolation and trench capacitor
- Patent number 11,195,958
- Issue date Dec 7, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended transistor
- Patent number 11,152,505
- Issue date Oct 19, 2021
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated trench capacitor with top plate having reduced voids
- Patent number 11,121,207
- Issue date Sep 14, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench intersections
- Patent number 11,101,342
- Issue date Aug 24, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with body diffusion self-aligned to gate
- Patent number 10,903,356
- Issue date Jan 26, 2021
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated trench capacitor
- Patent number 10,903,306
- Issue date Jan 26, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sinker to buried layer connection region for narrow deep trenches
- Patent number 10,886,160
- Issue date Jan 5, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain centered LDMOS transistor with integrated dummy patterns
- Patent number 10,879,387
- Issue date Dec 29, 2020
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drift region implant self-aligned to field relief oxide with sidewa...
- Patent number 10,861,948
- Issue date Dec 8, 2020
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with deep trench isolation and trench capacitor
- Patent number 10,811,543
- Issue date Oct 20, 2020
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection device with deep trench isolation islands
- Patent number 10,790,275
- Issue date Sep 29, 2020
- Texas Instruments Incorporated
- Zaichen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage CMOS with triple gate oxide
- Patent number 10,714,474
- Issue date Jul 14, 2020
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolated capacitor
- Patent number 10,629,674
- Issue date Apr 21, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual deep trenches for high voltage isolation
- Patent number 10,580,775
- Issue date Mar 3, 2020
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating transistors, including ambient oxidizing afte...
- Patent number 10,566,200
- Issue date Feb 18, 2020
- Texas Instruments Incorporated
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drift region implant self-aligned to field relief oxide with sidewa...
- Patent number 10,497,787
- Issue date Dec 3, 2019
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain centered LDMOS transistor with integrated dummy patterns
- Patent number 10,461,182
- Issue date Oct 29, 2019
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for IC with epi regions sharing the same tank
- Patent number 10,461,072
- Issue date Oct 29, 2019
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low substrate leakage Zener diode with modulated buried junction
- Patent number 10,453,914
- Issue date Oct 22, 2019
- Texas Instruments Incorporated
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low substrate leakage zener diode with modulated buried junction
- Patent number 10,355,076
- Issue date Jul 16, 2019
- Texas Instruments Incorporated
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of isolation layers using a dry-wet-dry oxidation technique
- Patent number 10,304,721
- Issue date May 28, 2019
- Texas Instruments Incorporated
- Bradley David Sucher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming trench capacitor having two dielectric layers an...
- Patent number 10,290,699
- Issue date May 14, 2019
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...
- Publication number 20240088305
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...
- Publication number 20230066563
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK
- Publication number 20220392886
- Publication date Dec 8, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HENRY LITZMANN EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION WITH SEGMENTED DEEP TRENCH
- Publication number 20220130717
- Publication date Apr 28, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AN INTEGRATED DEEP TRENCH CAPACITOR HAVIN...
- Publication number 20220077324
- Publication date Mar 10, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH INTERSECTIONS
- Publication number 20210351269
- Publication date Nov 11, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH INTERSECTIONS
- Publication number 20210249505
- Publication date Aug 12, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AN INTEGRATED DEEP TRENCH CAPACITOR HAVIN...
- Publication number 20210028316
- Publication date Jan 28, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION DEVICE WITH DEEP TRENCH ISOLATION ISLANDS
- Publication number 20210013193
- Publication date Jan 14, 2021
- TEXAS INSTRUMENTS INCORPORATED
- ZAICHEN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND TRENCH CAPACITOR
- Publication number 20210005760
- Publication date Jan 7, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND TRENCH CAPACITOR
- Publication number 20200212229
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION DEVICE WITH DEEP TRENCH ISOLATION ISLANDS
- Publication number 20200161292
- Publication date May 21, 2020
- TEXAS INSTRUMENTS INCORPORATED
- ZAICHEN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIFT REGION IMPLANT SELF-ALIGNED TO FIELD RELIEF OXIDE WITH SIDEWA...
- Publication number 20200083336
- Publication date Mar 12, 2020
- TEXAS INSTRUMENTS INCORPORATED
- HENRY LITZMANN EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK
- Publication number 20200066710
- Publication date Feb 27, 2020
- TEXAS INSTRUMENTS INCORPORATED
- HENRY LITZMANN EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN CENTERED LDMOS TRANSISTOR WITH INTEGRATED DUMMY PATTERNS
- Publication number 20200013890
- Publication date Jan 9, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION OF DRAIN EXTENDED TRANSISTOR FIELD OXIDE
- Publication number 20200006550
- Publication date Jan 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- James Robert Todd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN EXTENDED TRANSISTOR
- Publication number 20200006549
- Publication date Jan 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING TRANSISTORS, INCLUDING AMBIENT OXIDIZING AFTE...
- Publication number 20190304786
- Publication date Oct 3, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Abbas ALI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATED CAPACITOR
- Publication number 20190237535
- Publication date Aug 1, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE BLOCK INTEGRATION FOR CMOS TECHNOLOGY
- Publication number 20190207010
- Publication date Jul 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DOSE ANTIMONY IMPLANT THROUGH SCREEN LAYER FOR N-TYPE BURIED L...
- Publication number 20190189751
- Publication date Jun 20, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW SUBSTRATE LEAKAGE ZENER DIODE WITH MODULATED BURIED JUNCTION
- Publication number 20190157382
- Publication date May 23, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Jun CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW SUBSTRATE LEAKAGE ZENER DIODE WITH MODULATED BURIED JUNCTION
- Publication number 20190131389
- Publication date May 2, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Jun CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINKER TO BURIED LAYER CONNECTION REGION FOR NARROW DEEP TRENCHES
- Publication number 20190096744
- Publication date Mar 28, 2019
- TEXAS INSTRUMENTS INCORPORATED
- BINGHUA HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Trench Capacitor
- Publication number 20190051721
- Publication date Feb 14, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DOSE ANTIMONY IMPLANT THROUGH SCREEN LAYER FOR N-TYPE BURIED L...
- Publication number 20180315818
- Publication date Nov 1, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK
- Publication number 20180175021
- Publication date Jun 21, 2018
- TEXAS INSTRUMENTS INCORPORATED
- HENRY LITZMANN EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE WITH BODY DIFFUSION SELF-ALIGNED TO GATE
- Publication number 20180151722
- Publication date May 31, 2018
- TEXAS INSTRUMENTS INCORPORATED
- HENRY LITZMANN EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRENCH CAPACITOR WITH TOP PLATE HAVING REDUCED VOIDS
- Publication number 20180130869
- Publication date May 10, 2018
- TEXAS INSTRUMENTS INCORPORATED
- BINGHUA HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Trench Capacitor
- Publication number 20180076277
- Publication date Mar 15, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Isolation structure for IC with epi regions sharing the same tank

Vertical deep trench and deep trench island based deep n-type well...

Semiconductor device with an integrated deep trench capacitor havin...

ESD protection device with deep trench isolation islands

Deep trench isolation with segmented deep trench

Isolation structure for IC with epi regions sharing the same tank

Protection of drain extended transistor field oxide

Semiconductor device with an integrated deep trench capacitor havin...

Semiconductor device with deep trench isolation and trench capacitor

Drain extended transistor

Integrated trench capacitor with top plate having reduced voids

Deep trench intersections

LDMOS device with body diffusion self-aligned to gate

Integrated trench capacitor

Sinker to buried layer connection region for narrow deep trenches

Drain centered LDMOS transistor with integrated dummy patterns

Drift region implant self-aligned to field relief oxide with sidewa...

Semiconductor device with deep trench isolation and trench capacitor

ESD protection device with deep trench isolation islands

High voltage CMOS with triple gate oxide

Trench isolated capacitor

Dual deep trenches for high voltage isolation

Method of fabricating transistors, including ambient oxidizing afte...

Drift region implant self-aligned to field relief oxide with sidewa...

Drain centered LDMOS transistor with integrated dummy patterns

Isolation structure for IC with epi regions sharing the same tank

Low substrate leakage Zener diode with modulated buried junction

Low substrate leakage zener diode with modulated buried junction

Formation of isolation layers using a dry-wet-dry oxidation technique

Method for forming trench capacitor having two dielectric layers an...

Patents Applicationslast 30 patents

VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...

VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...

ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK

DEEP TRENCH ISOLATION WITH SEGMENTED DEEP TRENCH

SEMICONDUCTOR DEVICE WITH AN INTEGRATED DEEP TRENCH CAPACITOR HAVIN...

DEEP TRENCH INTERSECTIONS

DEEP TRENCH INTERSECTIONS

SEMICONDUCTOR DEVICE WITH AN INTEGRATED DEEP TRENCH CAPACITOR HAVIN...

ESD PROTECTION DEVICE WITH DEEP TRENCH ISOLATION ISLANDS

SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND TRENCH CAPACITOR

SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND TRENCH CAPACITOR

ESD PROTECTION DEVICE WITH DEEP TRENCH ISOLATION ISLANDS

DRIFT REGION IMPLANT SELF-ALIGNED TO FIELD RELIEF OXIDE WITH SIDEWA...

ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK

DRAIN CENTERED LDMOS TRANSISTOR WITH INTEGRATED DUMMY PATTERNS

PROTECTION OF DRAIN EXTENDED TRANSISTOR FIELD OXIDE

DRAIN EXTENDED TRANSISTOR

METHOD OF FABRICATING TRANSISTORS, INCLUDING AMBIENT OXIDIZING AFTE...

TRENCH ISOLATED CAPACITOR

SILICIDE BLOCK INTEGRATION FOR CMOS TECHNOLOGY

HIGH DOSE ANTIMONY IMPLANT THROUGH SCREEN LAYER FOR N-TYPE BURIED L...

LOW SUBSTRATE LEAKAGE ZENER DIODE WITH MODULATED BURIED JUNCTION

LOW SUBSTRATE LEAKAGE ZENER DIODE WITH MODULATED BURIED JUNCTION

SINKER TO BURIED LAYER CONNECTION REGION FOR NARROW DEEP TRENCHES

Integrated Trench Capacitor

HIGH DOSE ANTIMONY IMPLANT THROUGH SCREEN LAYER FOR N-TYPE BURIED L...

ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK

LDMOS DEVICE WITH BODY DIFFUSION SELF-ALIGNED TO GATE

INTEGRATED TRENCH CAPACITOR WITH TOP PLATE HAVING REDUCED VOIDS

Integrated Trench Capacitor