Bingwu Liu

Person

Ballston Spa, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming an IC product comprising transistor devices with...
- Patent number 11,315,835
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with independently-tuned threshold voltages
- Patent number 11,264,477
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Xiaoli He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming source/drain regions of a FinFET device and the...
- Patent number 10,964,598
- Issue date Mar 30, 2021
- GLOBALFOUNDRIES U.S. INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs having gates parallel to fins
- Patent number 10,553,707
- Issue date Feb 4, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming unmerged epitaxy for FinFet device
- Patent number 10,483,377
- Issue date Nov 19, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passive device structure and methods of making thereof
- Patent number 10,276,560
- Issue date Apr 30, 2019
- GLOBALFOUNDRIES Inc.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-diffusion break structure for fin-type field effect transistors
- Patent number 10,177,151
- Issue date Jan 8, 2019
- GLOBALFOUNDRIES Inc.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor structures and methods of fabricating same
- Patent number 10,096,488
- Issue date Oct 9, 2018
- GLOBALFOUNDRIES Inc.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming unmerged epitaxy for FinFET device
- Patent number 9,853,128
- Issue date Dec 26, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor structures and methods of fabricating same
- Patent number 9,812,336
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hardmask for a halo/extension implant of a static random access mem...
- Patent number 9,761,594
- Issue date Sep 12, 2017
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar structure with extended exposed raised structures and sa...
- Patent number 9,735,152
- Issue date Aug 15, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-fabricated bulk devices and semiconductor-on-insulator devices
- Patent number 9,691,787
- Issue date Jun 27, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nanowire field effect transistor structures
- Patent number 9,576,856
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods facilitating integration of different device ar...
- Patent number 9,570,586
- Issue date Feb 14, 2017
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal back end of line capacitor structures
- Patent number 9,564,484
- Issue date Feb 7, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having logic region and analog region
- Patent number 9,496,280
- Issue date Nov 15, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break with improved isolation and process window a...
- Patent number 9,431,396
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating conductive vias of circuit structures
- Patent number 9,425,129
- Issue date Aug 23, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for single diffusion break with simplified process
- Patent number 9,425,252
- Issue date Aug 23, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having FinFET ultra thin body and methods o...
- Patent number 9,337,197
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate structure on FinFET devices with reduced size fin...
- Patent number 9,331,202
- Issue date May 3, 2016
- GLOBALFOUNDRIES Inc.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Eliminating field oxide loss prior to FinFET source/drain epitaxial...
- Patent number 9,324,713
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal back end of line capacitor structures
- Patent number 9,252,203
- Issue date Feb 2, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combination finFET/ultra-thin body transistor structure and methods...
- Patent number 9,171,922
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures on semiconductor dev...
- Patent number 9,112,032
- Issue date Aug 18, 2015
- GLOBALFOUNDRIES Inc.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistor structures with extended embedded stress elemen...
- Patent number 9,024,368
- Issue date May 5, 2015
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having controlled final metal critical dimension
- Patent number 8,846,464
- Issue date Sep 30, 2014
- GLOBALFOUNDRIES Inc.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN STRUCTURES OF FINFET DEVICES
- Publication number 20210091222
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- TAO CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH INDEPENDENTLY-TUNED THRESHOLD VOLTAGES
- Publication number 20210091202
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Xiaoli He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SOURCE/DRAIN REGIONS OF A FINFET DEVICE AND THE...
- Publication number 20210020515
- Publication date Jan 21, 2021
- GLOBALFOUNDRIES INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED-GATE TRANSISTORS
- Publication number 20210005605
- Publication date Jan 7, 2021
- GLOBALFOUNDRIES INC.
- Wenjun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING AN IC PRODUCT COMPRISING TRANSISTOR DEVICES WITH...
- Publication number 20200286790
- Publication date Sep 10, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS HAVING GATES PARALLEL TO FINS
- Publication number 20200066883
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVE DEVICE STRUCTURE AND METHODS OF MAKING THEREOF
- Publication number 20190006350
- Publication date Jan 3, 2019
- GLOBALFOUNDRIES INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-DIFFUSION BREAK STRUCTURE FOR FIN-TYPE FIELD EFFECT TRANSISTORS
- Publication number 20180374851
- Publication date Dec 27, 2018
- GLOBALFOUNDRIES INC.
- YANZHEN WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING UNMERGED EPITAXY FOR FINFET DEVICE
- Publication number 20180097089
- Publication date Apr 5, 2018
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME
- Publication number 20170263733
- Publication date Sep 14, 2017
- GLOBALFOUNDRIES INC.
- Michael GANZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-FABRICATED BULK DEVICES AND SEMICONDUCTOR-ON-INSULATOR DEVICES
- Publication number 20170104011
- Publication date Apr 13, 2017
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING UNMERGED EPITAXY FOR FINFET DEVICE
- Publication number 20160365451
- Publication date Dec 15, 2016
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING LOGIC REGION AND ANALOG REGION
- Publication number 20160322384
- Publication date Nov 3, 2016
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELIMINATING FIELD OXIDE LOSS PRIOR TO FINFET SOURCE/DRAIN EPITAXIAL...
- Publication number 20160276345
- Publication date Sep 22, 2016
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED RAISED FIN TIP END STI TO IMPROVE THE FIN END EPI QUALITY
- Publication number 20160254180
- Publication date Sep 1, 2016
- GLOBALFOUNDRIES INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING FINFET ULTRA THIN BODY
- Publication number 20160225901
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAK WITH IMPROVED ISOLATION AND PROCESS WINDOW A...
- Publication number 20160225762
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR SINGLE DIFFUSION BREAK WITH SIMPLFIED PROCESS
- Publication number 20160225848
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NANOWIRE STRUCTURES
- Publication number 20160118304
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING FINFET ULTRA THIN BODY AND METHODS O...
- Publication number 20160118386
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL BACK END OF LINE CAPACITOR STRUCTURES
- Publication number 20160118458
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR STRUCTURE WITH EXTENDED EXPOSED RAISED STRUCTURES AND SA...
- Publication number 20150380404
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE STRUCTURE ON FINFET DEVICES WITH REDUCED SIZE FIN...
- Publication number 20150364595
- Publication date Dec 17, 2015
- GLOBALFOUNDRIES INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL BACK END OF LINE CAPACITOR STRUCTURES
- Publication number 20150325635
- Publication date Nov 12, 2015
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHODS FACILITATING INTEGRATION OF DIFFERENT DEVICE AR...
- Publication number 20150140756
- Publication date May 21, 2015
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTOR STRUCTURES WITH EXTENDED EMBEDDED STRESS ELEMEN...
- Publication number 20150129983
- Publication date May 14, 2015
- GLOBALFOUNDRIES Inc.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME
- Publication number 20150115371
- Publication date Apr 30, 2015
- GLOBALFOUNDRIES INC.
- Michael GANZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HARDMASK FOR A HALO/EXTENSION IMPLANT OF A STATIC RANDOM ACCESS MEM...
- Publication number 20150091097
- Publication date Apr 2, 2015
- GLOBALFOUNDRIES INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CONTROLLED FINAL METAL CRITICAL DIMENSION
- Publication number 20140273389
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods of forming an IC product comprising transistor devices with...

Field-effect transistors with independently-tuned threshold voltages

Methods of forming source/drain regions of a FinFET device and the...

FinFETs having gates parallel to fins

Devices and methods of forming unmerged epitaxy for FinFet device

Passive device structure and methods of making thereof

Single-diffusion break structure for fin-type field effect transistors

FinFET semiconductor structures and methods of fabricating same

Devices and methods of forming unmerged epitaxy for FinFET device

FinFET semiconductor structures and methods of fabricating same

Hardmask for a halo/extension implant of a static random access mem...

Non-planar structure with extended exposed raised structures and sa...

Co-fabricated bulk devices and semiconductor-on-insulator devices

Fabrication of nanowire field effect transistor structures

Fabrication methods facilitating integration of different device ar...

Metal-insulator-metal back end of line capacitor structures

Semiconductor structure having logic region and analog region

Single diffusion break with improved isolation and process window a...

Methods for fabricating conductive vias of circuit structures

Process for single diffusion break with simplified process

Semiconductor structure having FinFET ultra thin body and methods o...

Replacement gate structure on FinFET devices with reduced size fin...

Eliminating field oxide loss prior to FinFET source/drain epitaxial...

Metal-insulator-metal back end of line capacitor structures

Combination finFET/ultra-thin body transistor structure and methods...

Methods of forming replacement gate structures on semiconductor dev...

Fin-type transistor structures with extended embedded stress elemen...

Semiconductor device having controlled final metal critical dimension

Patents Applicationslast 30 patents

FIN STRUCTURES OF FINFET DEVICES

FIELD-EFFECT TRANSISTORS WITH INDEPENDENTLY-TUNED THRESHOLD VOLTAGES

METHODS OF FORMING SOURCE/DRAIN REGIONS OF A FINFET DEVICE AND THE...

STACKED-GATE TRANSISTORS

METHODS OF FORMING AN IC PRODUCT COMPRISING TRANSISTOR DEVICES WITH...

FINFETS HAVING GATES PARALLEL TO FINS

PASSIVE DEVICE STRUCTURE AND METHODS OF MAKING THEREOF

SINGLE-DIFFUSION BREAK STRUCTURE FOR FIN-TYPE FIELD EFFECT TRANSISTORS

DEVICES AND METHODS OF FORMING UNMERGED EPITAXY FOR FINFET DEVICE

FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME

CO-FABRICATED BULK DEVICES AND SEMICONDUCTOR-ON-INSULATOR DEVICES

DEVICES AND METHODS OF FORMING UNMERGED EPITAXY FOR FINFET DEVICE

SEMICONDUCTOR STRUCTURE HAVING LOGIC REGION AND ANALOG REGION

ELIMINATING FIELD OXIDE LOSS PRIOR TO FINFET SOURCE/DRAIN EPITAXIAL...

SELF ALIGNED RAISED FIN TIP END STI TO IMPROVE THE FIN END EPI QUALITY

SEMICONDUCTOR STRUCTURE HAVING FINFET ULTRA THIN BODY

SINGLE DIFFUSION BREAK WITH IMPROVED ISOLATION AND PROCESS WINDOW A...

PROCESS FOR SINGLE DIFFUSION BREAK WITH SIMPLFIED PROCESS

FABRICATION OF NANOWIRE STRUCTURES

SEMICONDUCTOR STRUCTURE HAVING FINFET ULTRA THIN BODY AND METHODS O...

METAL-INSULATOR-METAL BACK END OF LINE CAPACITOR STRUCTURES

NON-PLANAR STRUCTURE WITH EXTENDED EXPOSED RAISED STRUCTURES AND SA...

REPLACEMENT GATE STRUCTURE ON FINFET DEVICES WITH REDUCED SIZE FIN...

METAL-INSULATOR-METAL BACK END OF LINE CAPACITOR STRUCTURES

FABRICATION METHODS FACILITATING INTEGRATION OF DIFFERENT DEVICE AR...

FIN-TYPE TRANSISTOR STRUCTURES WITH EXTENDED EMBEDDED STRESS ELEMEN...

FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME

HARDMASK FOR A HALO/EXTENSION IMPLANT OF A STATIC RANDOM ACCESS MEM...

SEMICONDUCTOR DEVICE HAVING CONTROLLED FINAL METAL CRITICAL DIMENSION