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Bob McFadden
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Aloha, OR, US
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last 30 patents
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Patent Grant
Plasma nitridation for reduced leakage gate dielectric layers
Patent number
6,667,251
Issue date
Dec 23, 2003
Intel Corporation
Robert McFadden
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Plasma nitridation for reduced leakage gate dielectric layers
Patent number
6,610,615
Issue date
Aug 26, 2003
Intel Corporation
Robert McFadden
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Methods of making field effect transistor structure with partially...
Patent number
6,541,343
Issue date
Apr 1, 2003
Intel Corporation
Anand S. Murthy
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming gate oxide having dual thickness by oxidation pro...
Patent number
6,124,171
Issue date
Sep 26, 2000
Intel Corporation
Reza Arghavani
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
Deposition apparatus for providing uniform low-k dielectric
Publication number
20050284371
Publication date
Dec 29, 2005
Robert S. McFadden
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
PLASMA NITRIDATION FOR REDUCED LEAKAGE GATE DIELECTRIC LAYERS
Publication number
20030216059
Publication date
Nov 20, 2003
Robert McFadden
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Field effect transistor structure with partially isolated source/dr...
Publication number
20030136985
Publication date
Jul 24, 2003
Anand S. Murthy
H01 - BASIC ELECTRIC ELEMENTS