Hattagandy et al , American Institute of Physics, 1995, pp. 3495-3497.* |
S.V. Hattangady, R. Kraft, D.T. Grider, M.A. Douglas, G.A. Brown, P.A. Tiner, J.W. Kuehne, P.E. Nicollian, & M.F. Pas, Ultrathin Nitrogen-Profile Engineered Gate Dielectric Films, IEDM, 1996, pp. 19.1.1-19.1.4, Dallas, TX. |
S.V. Hattangady, H. Niimi, & G. Lucovsky, Controlled Nitrogen Incorporation At The Gate Oxide Surface, Appl. Phys. Lett., Jun. 19, 1995, pp. 3495-3497, American Institute of Physics, USA. |
Dixit Kapila, Sunil Hattangady, Monte Douglas, Robert Kraft, & Michael Gribelyuk, Modeling and Optimization of Oxynitride Gate Dielectrics—Formation by Remote Plasma Nitridation of Silicon Dioxide, Journal of the Electrochemical-Society, 1999, pp. 1111-1116, vol. 146, The Electochemical Society, Inc., USA. |
R. Kraft, T.P. Schneider, W.W. Dostalik, & S. Hattangady, Surface Nitridation of Silicon Dioxide with A High Density Nitrogen Plasma, J. Vac. Sci. Technol., Jul./Aug. 1997, pp. 967-970, American Vacuum Society, USA. |
H. Niimi, K. Koh, & G. Lucovsky, Controlled Incorporation of Nitrogen At The Top Surface of Silicon Oxide Gate Dielectrics, MRS, Fall 1996, pp. 1-6, USA. |
Yider Wu & Gerald Lucovsky, Ultrathin Nitride/Oxide (N/O) Gate Dielectrics for p+ -Polysilicon Gated PMOSFET's Prepared by a Combined Remote Plasma Enhanced CVD/ Thermal Oxidation Process, IEEE Electron Device Letters, Oct. 1998, pp. 367-369, vol. 19 No. 10, USA. |