Bong-seok Suh

Person

Hwasung-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,107,135
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Jung Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,967,614
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Jung Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,322,589
- Issue date May 3, 2022
- Samsung Electronics Co., Ltd.
- Jung Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,139,382
- Issue date Oct 5, 2021
- Samsung Electronics Co., Ltd.
- Jung Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,063,150
- Issue date Jul 13, 2021
- Samsung Electronics Co. Ltd.
- Sang-Min Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,633,520
- Issue date Jan 21, 2014
- Samsung Electronics Co., Ltd.
- Dong-Hee Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors having silicided source...
- Patent number 7,863,201
- Issue date Jan 4, 2011
- Samsung Electronics Co., Ltd.
- Yong-Kuk Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device free of gate spacer stress and method of manuf...
- Patent number 7,655,525
- Issue date Feb 2, 2010
- Samsung Electronics Co., Ltd.
- Sun-jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metal interconnection of a semiconductor device...
- Patent number 7,446,033
- Issue date Nov 4, 2008
- SAMUNG ELECTRONICS CO., LTD.
- Sun-jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,341,908
- Issue date Mar 11, 2008
- Samsung Electronics Co., Ltd.
- Bong-seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device by forming diffusion bar...
- Patent number 7,335,590
- Issue date Feb 26, 2008
- Samsung Electronics Co., Ltd.
- Bong-Seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal (MIM) capacitor and method of fabricating the...
- Patent number 7,332,764
- Issue date Feb 19, 2008
- Samsung Electronics Co., Ltd.
- Seung-Man Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Void-free metal interconnection structure and method of forming the...
- Patent number 6,953,745
- Issue date Oct 11, 2005
- Samsung Electronics Co., Ltd.
- Jeong-hoon Ahn
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220231127
- Publication date Jul 21, 2022
- Samsung Electronics Co., Ltd.
- Jung Gil YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210399108
- Publication date Dec 23, 2021
- Samsung Electronics Co., Ltd.
- Jung Gil YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200388678
- Publication date Dec 10, 2020
- Samsung Electronics Co., Ltd.
- Jung Gil YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200373402
- Publication date Nov 26, 2020
- Samsung Electronics Co., Ltd.
- Jung Gil YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20200105919
- Publication date Apr 2, 2020
- Samsung Electronics Co., Ltd.
- Sang-Min YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140131815
- Publication date May 15, 2014
- Samsung Electronics Co., Ltd.
- Dong-Hee Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20120098073
- Publication date Apr 26, 2012
- Dong-Hee Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Field Effect Transistors Having Silicided Source...
- Publication number 20090239344
- Publication date Sep 24, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Yong Kuk Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Free of Gate Spacer Stress and Method of Manuf...
- Publication number 20080079089
- Publication date Apr 3, 2008
- Sung-jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Nickel Alloy Silicide Layer Having U...
- Publication number 20080067612
- Publication date Mar 20, 2008
- Sun Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Semiconductor Device and Semiconductor Device...
- Publication number 20070298600
- Publication date Dec 27, 2007
- Bong-seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective copper alloy interconnections in semiconductor devices an...
- Publication number 20060289999
- Publication date Dec 28, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Hyo-Jong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a metal interconnection of a semiconductor device...
- Publication number 20060177630
- Publication date Aug 10, 2006
- Sun-jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060170103
- Publication date Aug 3, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Bong-seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating interconnection line in semiconductor device
- Publication number 20060154465
- Publication date Jul 13, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Bong-seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-insulator-metal (MIM) capacitor and method of fabricating the...
- Publication number 20050275005
- Publication date Dec 15, 2005
- Seung-Man Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating semiconductor device by forming diffusion bar...
- Publication number 20050153544
- Publication date Jul 14, 2005
- SAMSUNG ELECTRONICS CO., LTD.
- Bong-Seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Void-free metal interconnection steucture and method of forming the...
- Publication number 20050029010
- Publication date Feb 10, 2005
- Jeong-hoon Ahn
- H01 - BASIC ELECTRIC ELEMENTS

Bong-seok Suh

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor devices

Semiconductor device

Methods of forming field effect transistors having silicided source...

Semiconductor device free of gate spacer stress and method of manuf...

Method of forming a metal interconnection of a semiconductor device...

Semiconductor device and method of manufacturing the same

Method of fabricating semiconductor device by forming diffusion bar...

Metal-insulator-metal (MIM) capacitor and method of fabricating the...

Void-free metal interconnection structure and method of forming the...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

Semiconductor Device

Methods of Forming Field Effect Transistors Having Silicided Source...

Semiconductor Device Free of Gate Spacer Stress and Method of Manuf...

Semiconductor Device Including Nickel Alloy Silicide Layer Having U...

Method of Fabricating Semiconductor Device and Semiconductor Device...

Selective copper alloy interconnections in semiconductor devices an...

Method of forming a metal interconnection of a semiconductor device...

Semiconductor device and method of manufacturing the same

Method for fabricating interconnection line in semiconductor device

Metal-insulator-metal (MIM) capacitor and method of fabricating the...

Method of fabricating semiconductor device by forming diffusion bar...

Void-free metal interconnection steucture and method of forming the...