Brad Herner

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cell that employs a selectively deposited reversible resista...
- Patent number 8,913,417
- Issue date Dec 16, 2014
- Sandisk 3D LLC
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell that employs a selectively grown reversible resistance-...
- Patent number 8,816,315
- Issue date Aug 26, 2014
- Sandisk 3D LLC
- April D. Schricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell that employs a selectively fabricated carbon nano-tube...
- Patent number 8,558,220
- Issue date Oct 15, 2013
- Sandisk 3D LLC
- April Schricker
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cell that employs a selectively grown reversible resistance-...
- Patent number 8,373,150
- Issue date Feb 12, 2013
- SanDisk 3D, LLC
- April D. Schricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell that employs a selectively fabricated carbon nano-tube...
- Patent number 8,236,623
- Issue date Aug 7, 2012
- Sandisk 3D LLC
- April Schricker
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cell that employs a selectively deposited reversible resista...
- Patent number 8,233,308
- Issue date Jul 31, 2012
- Sandisk 3D LLC
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell that employs a selectively grown reversible resistance-...
- Patent number 7,902,537
- Issue date Mar 8, 2011
- Sandisk 3D LLC
- April Schricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell that employs a selectively deposited reversible resista...
- Patent number 7,846,785
- Issue date Dec 7, 2010
- Sandisk 3D LLC
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell that employs a selectively grown reversible resistance-...
- Patent number 7,824,956
- Issue date Nov 2, 2010
- Sandisk 3D LLC
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Grant
Dense arrays and charge storage devices
- Patent number 7,129,538
- Issue date Oct 31, 2006
- Sandisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Monolithic three dimensional array of charge storage devices contai...
- Patent number 6,881,994
- Issue date Apr 19, 2005
- Matrix Semiconductor, Inc.
- Thomas H. Lee
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...
- Publication number 20130146832
- Publication date Jun 13, 2013
- SanDisk 3D LLC
- April D. Schricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTA...
- Publication number 20120286233
- Publication date Nov 15, 2012
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
DENSE ARRAYS AND CHARGE STORAGE DEVICES
- Publication number 20120223380
- Publication date Sep 6, 2012
- SanDisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...
- Publication number 20120217462
- Publication date Aug 30, 2012
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
DENSE ARRAYS AND CHARGE STORAGE DEVICES
- Publication number 20110156044
- Publication date Jun 30, 2011
- SanDisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...
- Publication number 20110147693
- Publication date Jun 23, 2011
- APRIL SCHRICKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...
- Publication number 20110042639
- Publication date Feb 24, 2011
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE...
- Publication number 20090168491
- Publication date Jul 2, 2009
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE...
- Publication number 20090166609
- Publication date Jul 2, 2009
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH PLANARIZED CARBON NANOTUBE LAYER AND METHODS OF FO...
- Publication number 20090166610
- Publication date Jul 2, 2009
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTA...
- Publication number 20090001343
- Publication date Jan 1, 2009
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...
- Publication number 20090001342
- Publication date Jan 1, 2009
- APRIL SCHRICKER
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...
- Publication number 20090001344
- Publication date Jan 1, 2009
- April Schricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTA...
- Publication number 20090001345
- Publication date Jan 1, 2009
- April Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
Dense arrays and charge storage devices
- Publication number 20040206996
- Publication date Oct 21, 2004
- MATRIX SEMICONDUCTOR, INC.
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Dense arrays and charge storage devices, and methods for making same
- Publication number 20020028541
- Publication date Mar 7, 2002
- Thomas H. Lee
- H01 - BASIC ELECTRIC ELEMENTS

Brad Herner

Person

Patents Grantslast 30 patents

Memory cell that employs a selectively deposited reversible resista...

Memory cell that employs a selectively grown reversible resistance-...

Memory cell that employs a selectively fabricated carbon nano-tube...

Memory cell that employs a selectively grown reversible resistance-...

Memory cell that employs a selectively fabricated carbon nano-tube...

Memory cell that employs a selectively deposited reversible resista...

Memory cell that employs a selectively grown reversible resistance-...

Memory cell that employs a selectively deposited reversible resista...

Memory cell that employs a selectively grown reversible resistance-...

Dense arrays and charge storage devices

Monolithic three dimensional array of charge storage devices contai...

Patents Applicationslast 30 patents

MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...

MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTA...

DENSE ARRAYS AND CHARGE STORAGE DEVICES

MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...

DENSE ARRAYS AND CHARGE STORAGE DEVICES

MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...

MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...

MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE...

MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE...

MEMORY CELL WITH PLANARIZED CARBON NANOTUBE LAYER AND METHODS OF FO...

MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTA...

MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...

MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-...

MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTA...

Dense arrays and charge storage devices

Dense arrays and charge storage devices, and methods for making same