Bradley A. Orner

Person

Cambridge, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Segmented guard ring structures with electrically insulated gap str...
- Patent number 8,987,067
- Issue date Mar 24, 2015
- International Business Machines Corporation
- Robert L. Barry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)
- Patent number 8,853,043
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diodes for millimeter wave SiGe BiCMOS applications
- Patent number 8,592,293
- Issue date Nov 26, 2013
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic self-aligned base using se...
- Patent number 8,525,293
- Issue date Sep 3, 2013
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency integrated circuit with on-chip noise source for se...
- Patent number 8,421,478
- Issue date Apr 16, 2013
- International Business Machines Corporation
- Brian Allan Floyd
- G01 - MEASURING TESTING
Information Patent Grant
Silicided trench contact to buried conductive layer
- Patent number 8,338,265
- Issue date Dec 25, 2012
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor having intersti...
- Patent number 8,299,500
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral passive device having dual annular electrodes
- Patent number 8,288,244
- Issue date Oct 16, 2012
- International Business Machines Corporation
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic self-aligned base using se...
- Patent number 8,236,662
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FIN differential MOS varactor diode
- Patent number 8,217,497
- Issue date Jul 10, 2012
- International Business Machines Corporation
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench based far subcollector reachthrough
- Patent number 8,105,924
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied impurity profile region formation for varying breakdown volt...
- Patent number 8,030,167
- Issue date Oct 4, 2011
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diodes for millimeter wave SiGe BICMOS applications
- Patent number 7,936,041
- Issue date May 3, 2011
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic self-aligned base using se...
- Patent number 7,892,910
- Issue date Feb 22, 2011
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with dual shallow trench isolation and low base...
- Patent number 7,888,745
- Issue date Feb 15, 2011
- International Business Machines Corporation
- Marwan H. Khater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral passive device having dual annular electrodes
- Patent number 7,821,097
- Issue date Oct 26, 2010
- International Business Machines Corporation
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar and CMOS integration with reduced contact height
- Patent number 7,701,015
- Issue date Apr 20, 2010
- International Business Machines Corporation
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench based far subcollector reachthrough
- Patent number 7,691,734
- Issue date Apr 6, 2010
- International Business Machines Corporation
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of base formation in a BiCMOS process
- Patent number 7,625,792
- Issue date Dec 1, 2009
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied impurity profile region formation for varying breakdown volt...
- Patent number 7,550,787
- Issue date Jun 23, 2009
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral silicided diodes
- Patent number 7,381,997
- Issue date Jun 3, 2008
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral silicided diodes
- Patent number 7,335,927
- Issue date Feb 26, 2008
- Internatioanl Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-continuous encapsulation layer for MIM capacitor
- Patent number 7,326,987
- Issue date Feb 5, 2008
- International Business Machines Corporation
- Wagdi Abadeer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-Continuous encapsulation layer for MIM capacitor
- Patent number 6,913,965
- Issue date Jul 5, 2005
- International Busniess Machines Corporation
- Wagdi W. Abadeer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of base formation in a BiCMOS process
- Patent number 6,911,681
- Issue date Jun 28, 2005
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEGMENTED GUARD RING STRUCTURES WITH ELECTRICALLY INSULATED GAP STR...
- Publication number 20150035112
- Publication date Feb 5, 2015
- International Business Machines Corporation
- Robert L. Barry
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEGMENTED GUARD RING STRUCTURES WITH ELECTRICALLY INSULATED GAP STR...
- Publication number 20140246752
- Publication date Sep 4, 2014
- International Business Machines Corporation
- Robert L. Barry
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SILICIDED TRENCH CONTACT TO BURIED CONDUCTIVE LAYER
- Publication number 20140239498
- Publication date Aug 28, 2014
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20130005108
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...
- Publication number 20120319233
- Publication date Dec 20, 2012
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODES FOR MILLIMETER WAVE SiGe BICMOS APPLICATIONS
- Publication number 20110143494
- Publication date Jun 16, 2011
- International Business Machines Corporation
- Jeffrey B. JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...
- Publication number 20110062548
- Publication date Mar 17, 2011
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL PASSIVE DEVICE HAVING DUAL ANNULAR ELECTRODES
- Publication number 20100279483
- Publication date Nov 4, 2010
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicided Trench Contact to Buried Conductive Layer
- Publication number 20100117237
- Publication date May 13, 2010
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH BASED FAR SUBCOLLECTOR REACHTHROUGH
- Publication number 20100117189
- Publication date May 13, 2010
- International Business Machines Corporation
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radio Frequency Integrated Circuit with On-Chip Noise Source for Se...
- Publication number 20090190640
- Publication date Jul 30, 2009
- Brian Allan Floyd
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
BIPOLAR AND CMOS INTEGRATION WITH REDUCED CONTACT HEIGHT
- Publication number 20090039522
- Publication date Feb 12, 2009
- International Business Corporation
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH BASED FAR SUBCOLLECTOR REACHTHROUGH
- Publication number 20080211064
- Publication date Sep 4, 2008
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...
- Publication number 20080203490
- Publication date Aug 28, 2008
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODES FOR MILLIMETER WAVE SiGe BICMOS APPLICATIONS
- Publication number 20080179703
- Publication date Jul 31, 2008
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DIFFERENTIAL MOS VARACTOR DIODE
- Publication number 20080169495
- Publication date Jul 17, 2008
- Bradley A. Orner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SILICIDED DIODES
- Publication number 20080067623
- Publication date Mar 20, 2008
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH DUAL SHALLOW TRENCH ISOLATION AND LOW BASE...
- Publication number 20070298578
- Publication date Dec 27, 2007
- International Business Machines Corporation
- Marwan H. Khater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL PASSIVE DEVICE HAVING DUAL ANNULAR ELECTRODES
- Publication number 20070278614
- Publication date Dec 6, 2007
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...
- Publication number 20070275534
- Publication date Nov 29, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Base Formation in a Bicmos Process
- Publication number 20070207567
- Publication date Sep 6, 2007
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SILICIDED DIODES
- Publication number 20070176252
- Publication date Aug 2, 2007
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20070051980
- Publication date Mar 8, 2007
- International Business Machines Corporation
- Wade J. Hodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...
- Publication number 20060270203
- Publication date Nov 30, 2006
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-CONTINUOUS ENCAPSULATION LAYER FOR MIM CAPACITOR
- Publication number 20050189615
- Publication date Sep 1, 2005
- International Business Machines Corporation
- Wagdi W. Abadeer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-CONTINUOUS ENCAPSULATION LAYER FOR MIM CAPACITOR
- Publication number 20040251514
- Publication date Dec 16, 2004
- INTRENATIONAL BUSINESS MACHINES CORPORATION
- Wagdi William Abadeer
- H01 - BASIC ELECTRIC ELEMENTS

Bradley A. Orner

Person

Patents Grantslast 30 patents

Segmented guard ring structures with electrically insulated gap str...

Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)

Schottky barrier diodes for millimeter wave SiGe BiCMOS applications

Bipolar transistor with raised extrinsic self-aligned base using se...

Radio frequency integrated circuit with on-chip noise source for se...

Silicided trench contact to buried conductive layer

Silicon germanium heterojunction bipolar transistor having intersti...

Lateral passive device having dual annular electrodes

Bipolar transistor with raised extrinsic self-aligned base using se...

FIN differential MOS varactor diode

Deep trench based far subcollector reachthrough

Varied impurity profile region formation for varying breakdown volt...

Schottky barrier diodes for millimeter wave SiGe BICMOS applications

Bipolar transistor with raised extrinsic self-aligned base using se...

Bipolar transistor with dual shallow trench isolation and low base...

Lateral passive device having dual annular electrodes

Bipolar and CMOS integration with reduced contact height

Deep trench based far subcollector reachthrough

Method of base formation in a BiCMOS process

Varied impurity profile region formation for varying breakdown volt...

Lateral silicided diodes

Lateral silicided diodes

Non-continuous encapsulation layer for MIM capacitor

Non-Continuous encapsulation layer for MIM capacitor

Method of base formation in a BiCMOS process

Patents Applicationslast 30 patents

SEGMENTED GUARD RING STRUCTURES WITH ELECTRICALLY INSULATED GAP STR...

SEGMENTED GUARD RING STRUCTURES WITH ELECTRICALLY INSULATED GAP STR...

SILICIDED TRENCH CONTACT TO BURIED CONDUCTIVE LAYER

SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...

SCHOTTKY BARRIER DIODES FOR MILLIMETER WAVE SiGe BICMOS APPLICATIONS

BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...

LATERAL PASSIVE DEVICE HAVING DUAL ANNULAR ELECTRODES

Silicided Trench Contact to Buried Conductive Layer

DEEP TRENCH BASED FAR SUBCOLLECTOR REACHTHROUGH

Radio Frequency Integrated Circuit with On-Chip Noise Source for Se...

BIPOLAR AND CMOS INTEGRATION WITH REDUCED CONTACT HEIGHT

DEEP TRENCH BASED FAR SUBCOLLECTOR REACHTHROUGH

BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...

SCHOTTKY BARRIER DIODES FOR MILLIMETER WAVE SiGe BICMOS APPLICATIONS

FIN DIFFERENTIAL MOS VARACTOR DIODE

LATERAL SILICIDED DIODES

BIPOLAR TRANSISTOR WITH DUAL SHALLOW TRENCH ISOLATION AND LOW BASE...

LATERAL PASSIVE DEVICE HAVING DUAL ANNULAR ELECTRODES

VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...

Method of Base Formation in a Bicmos Process

LATERAL SILICIDED DIODES

SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...

NON-CONTINUOUS ENCAPSULATION LAYER FOR MIM CAPACITOR

NON-CONTINUOUS ENCAPSULATION LAYER FOR MIM CAPACITOR