BRIAN A. WINSTEAD

Person

AUSTIN, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for preconditioning thin film storage array for data retention
- Patent number 9,449,713
- Issue date Sep 20, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Horacio P. Gasquet
- G11 - INFORMATION STORAGE
Information Patent Grant
Split-gate non-volatile memory cells having gap protection zones
- Patent number 9,331,160
- Issue date May 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with discrete storage elements
- Patent number 9,202,930
- Issue date Dec 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Split-gate non-volatile memory cells having improved overlap tolerance
- Patent number 9,111,908
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Ted R. White
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate nanocrystal memory integration
- Patent number 9,111,867
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with different threshold voltages
- Patent number 8,962,410
- Issue date Feb 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cell
- Patent number 8,962,416
- Issue date Feb 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming a split gate bit cell
- Patent number 8,885,403
- Issue date Nov 11, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Cheong M. Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making a non-volatile memory (NVM) cell structure
- Patent number 8,884,358
- Issue date Nov 11, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate memory device with gap spacer
- Patent number 8,835,295
- Issue date Sep 16, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jinmiao J. Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for SOI structures combining sidewall spac...
- Patent number 8,766,362
- Issue date Jul 1, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for erase biasing of split-gate non-volatile me...
- Patent number 8,724,399
- Issue date May 13, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having different non-volatile memories having...
- Patent number 8,679,912
- Issue date Mar 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor structure useful in making a split...
- Patent number 8,643,123
- Issue date Feb 4, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Cheong M. Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device featuring a gate stressor...
- Patent number 8,587,039
- Issue date Nov 19, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an active region and two layers havi...
- Patent number 8,569,858
- Issue date Oct 29, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a heterojunction region
- Patent number 8,390,026
- Issue date Mar 5, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming one transistor DRAM cell structure
- Patent number 8,283,244
- Issue date Oct 9, 2012
- FREESCALE SEMICONDUCTOR, INC.
- James D. Burnett
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile split gate memory cell having oxide growth
- Patent number 8,263,463
- Issue date Sep 11, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Shallow trench isolation for SOI structures combining sidewall spac...
- Patent number 8,236,638
- Issue date Aug 7, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate non-volatile memory cell having improved overlap toleran...
- Patent number 8,163,615
- Issue date Apr 24, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Ted R. White
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a split gate device
- Patent number 8,048,738
- Issue date Nov 1, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Split-gate non-volatile memory cell and method
- Patent number 8,035,156
- Issue date Oct 11, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor structure useful in making a split...
- Patent number 7,985,649
- Issue date Jul 26, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device featuring a gate stressor...
- Patent number 7,960,243
- Issue date Jun 14, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a stressed non-volatile memory device
- Patent number 7,960,267
- Issue date Jun 14, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory having P-type split gate memory cells and method of operation
- Patent number 7,957,190
- Issue date Jun 7, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Cheong M. Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate non-volatile memory cell with improved endurance and met...
- Patent number 7,923,769
- Issue date Apr 12, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Ted R. White
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Split gate non-volatile memory cell with improved endurance and met...
- Patent number 7,923,328
- Issue date Apr 12, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Ted R. White
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Source/drain stressors formed using in-situ epitaxial growth
- Patent number 7,833,852
- Issue date Nov 16, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Split Gate Nanocrystal Memory Integration
- Publication number 20150060989
- Publication date Mar 5, 2015
- Freescale Seminconductor, Inc.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-Gate Non-Volatile Memory Cells Having Gap Protection Zones
- Publication number 20150054048
- Publication date Feb 26, 2015
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELL
- Publication number 20150035034
- Publication date Feb 5, 2015
- BRIAN A. WINSTEAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR SPLIT GATE MEMORY
- Publication number 20140357072
- Publication date Dec 4, 2014
- JINMIAO J. SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...
- Publication number 20140299935
- Publication date Oct 9, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMING A SPLIT GATE BIT CELL
- Publication number 20140211559
- Publication date Jul 31, 2014
- Cheong M. Hong
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MAKING A NON-VOLATILE MEMORY (NVM) CELL STRUCTURE
- Publication number 20140203347
- Publication date Jul 24, 2014
- BRIAN A. WINSTEAD
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE REGION AND TWO LAYERS HAVI...
- Publication number 20140054704
- Publication date Feb 27, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRECONDITIONING THIN FILM STORAGE ARRAY FOR DATA RETENTION
- Publication number 20130343112
- Publication date Dec 26, 2013
- HORACIO P. GASQUET
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT GATE MEMORY DEVICE WITH GAP SPACER
- Publication number 20130323922
- Publication date Dec 5, 2013
- FREESCALE SEMICONDUCTOR, INC.
- JINMIAO J. SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS FOR ERASE BIASING OF SPLIT-GATE NON-VOLATILE ME...
- Publication number 20130279267
- Publication date Oct 24, 2013
- Brian A. Winstead
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIFFERENT NON-VOLATILE MEMORIES HAVING...
- Publication number 20130193506
- Publication date Aug 1, 2013
- SUNG-TAEG KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES
- Publication number 20130109141
- Publication date May 2, 2013
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MEMORY DEVICE WITH GAP SPACER
- Publication number 20130084697
- Publication date Apr 4, 2013
- GLOBAL FOUNDRIES SINGAPORE PTE LTD.
- Jinmiao J. Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY WITH DISCRETE STORAGE ELEMENTS
- Publication number 20120292683
- Publication date Nov 22, 2012
- Konstantin V. Loiko
- G11 - INFORMATION STORAGE
Information Patent Application
SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...
- Publication number 20120273889
- Publication date Nov 1, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT...
- Publication number 20120261769
- Publication date Oct 18, 2012
- CHEONG M. HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE NON-VOLATILE MEMORY CELLS HAVING IMPROVED OVERLAP TOLERANCE
- Publication number 20120241839
- Publication date Sep 27, 2012
- FREESCALE SEMICONDUCTOR, INC.
- TED R. WHITE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SPLIT GATE DEVICE
- Publication number 20110256705
- Publication date Oct 20, 2011
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE FEATURING A GATE STRESSOR...
- Publication number 20110220975
- Publication date Sep 15, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT...
- Publication number 20110165749
- Publication date Jul 7, 2011
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELL WITH IMPROVED ENDURANCE AND MET...
- Publication number 20110031548
- Publication date Feb 10, 2011
- FREESCALE SEMICONDUCTOR, INC.
- TED R. WHITE
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MAKING A STRESSED NON-VOLATILE MEMORY DEVICE
- Publication number 20100248466
- Publication date Sep 30, 2010
- Konstantin V. Loiko
- B82 - NANO-TECHNOLOGY
Information Patent Application
NONVOLATILE SPLIT GATE MEMORY CELL HAVING OXIDE GROWTH
- Publication number 20100244120
- Publication date Sep 30, 2010
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRESSED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING
- Publication number 20100244121
- Publication date Sep 30, 2010
- Konstantin V. Loiko
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPLIT-GATE NON-VOLATILE MEMORY CELL AND METHOD
- Publication number 20100078703
- Publication date Apr 1, 2010
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TRANSISTOR DRAM CELL STRUCTURE AND METHOD FOR FORMING
- Publication number 20100001326
- Publication date Jan 7, 2010
- FREESCALE SEMICONDUCTOR, INC.
- JAMES D. BURNETT
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY HAVING P-TYPE SPLIT GATE MEMORY CELLS AND METHOD OF OPERATION
- Publication number 20090296491
- Publication date Dec 3, 2009
- Cheong M. Hong
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING A SPLIT GATE MEMORY DEVICE AND APPARATUS
- Publication number 20090273013
- Publication date Nov 5, 2009
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELL WITH IMPROVED ENDURANCE AND MET...
- Publication number 20090256191
- Publication date Oct 15, 2009
- Ted R. White
- B82 - NANO-TECHNOLOGY

BRIAN A. WINSTEAD

Person

Patents Grantslast 30 patents

Method for preconditioning thin film storage array for data retention

Split-gate non-volatile memory cells having gap protection zones

Memory with discrete storage elements

Split-gate non-volatile memory cells having improved overlap tolerance

Split gate nanocrystal memory integration

Transistors with different threshold voltages

Split gate non-volatile memory cell

Programming a split gate bit cell

Method of making a non-volatile memory (NVM) cell structure

Split gate memory device with gap spacer

Shallow trench isolation for SOI structures combining sidewall spac...

Methods and systems for erase biasing of split-gate non-volatile me...

Semiconductor device having different non-volatile memories having...

Method of making a semiconductor structure useful in making a split...

Method of forming a semiconductor device featuring a gate stressor...

Semiconductor device including an active region and two layers havi...

Electronic device including a heterojunction region

Method for forming one transistor DRAM cell structure

Nonvolatile split gate memory cell having oxide growth

Shallow trench isolation for SOI structures combining sidewall spac...

Split-gate non-volatile memory cell having improved overlap toleran...

Method for forming a split gate device

Split-gate non-volatile memory cell and method

Method of making a semiconductor structure useful in making a split...

Method of forming a semiconductor device featuring a gate stressor...

Method for making a stressed non-volatile memory device

Memory having P-type split gate memory cells and method of operation

Split gate non-volatile memory cell with improved endurance and met...

Split gate non-volatile memory cell with improved endurance and met...

Source/drain stressors formed using in-situ epitaxial growth

Patents Applicationslast 30 patents

Split Gate Nanocrystal Memory Integration

Split-Gate Non-Volatile Memory Cells Having Gap Protection Zones

SPLIT GATE NON-VOLATILE MEMORY CELL

METHODS AND STRUCTURES FOR SPLIT GATE MEMORY

SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...

PROGRAMMING A SPLIT GATE BIT CELL

METHOD OF MAKING A NON-VOLATILE MEMORY (NVM) CELL STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE REGION AND TWO LAYERS HAVI...

METHOD FOR PRECONDITIONING THIN FILM STORAGE ARRAY FOR DATA RETENTION

SPLIT GATE MEMORY DEVICE WITH GAP SPACER

METHODS AND SYSTEMS FOR ERASE BIASING OF SPLIT-GATE NON-VOLATILE ME...

SEMICONDUCTOR DEVICE HAVING DIFFERENT NON-VOLATILE MEMORIES HAVING...

TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES

SPLIT GATE MEMORY DEVICE WITH GAP SPACER

MEMORY WITH DISCRETE STORAGE ELEMENTS

SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...

METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT...

SPLIT-GATE NON-VOLATILE MEMORY CELLS HAVING IMPROVED OVERLAP TOLERANCE

METHOD FOR FORMING A SPLIT GATE DEVICE

METHOD OF FORMING A SEMICONDUCTOR DEVICE FEATURING A GATE STRESSOR...

METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT...

SPLIT GATE NON-VOLATILE MEMORY CELL WITH IMPROVED ENDURANCE AND MET...

METHOD FOR MAKING A STRESSED NON-VOLATILE MEMORY DEVICE

NONVOLATILE SPLIT GATE MEMORY CELL HAVING OXIDE GROWTH

STRESSED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING

SPLIT-GATE NON-VOLATILE MEMORY CELL AND METHOD

ONE TRANSISTOR DRAM CELL STRUCTURE AND METHOD FOR FORMING

MEMORY HAVING P-TYPE SPLIT GATE MEMORY CELLS AND METHOD OF OPERATION

METHOD OF FORMING A SPLIT GATE MEMORY DEVICE AND APPARATUS

SPLIT GATE NON-VOLATILE MEMORY CELL WITH IMPROVED ENDURANCE AND MET...