Brian E. Hornung

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with diffusion suppression and LDD implants an...
- Patent number 12,154,901
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-rotation gate-edge diode leakage reduction for MOS transistors
- Patent number 12,009,423
- Issue date Jun 11, 2024
- Texas Instruments Incorporated
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion suppression and LDD implants an...
- Patent number 11,616,058
- Issue date Mar 28, 2023
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep collector vertical bipolar transistor with enhanced gain
- Patent number 9,397,164
- Issue date Jul 19, 2016
- Texas Instruments Incorporated
- Brian E. Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep collector vertical bipolar transistor with enhanced gain
- Patent number 9,245,755
- Issue date Jan 26, 2016
- Texas Instruments Incorporated
- Brian E. Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pocket counterdoping for gate-edge diode leakage reduction
- Patent number 8,753,944
- Issue date Jun 17, 2014
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having optimized shallow junction geometries a...
- Patent number 7,098,099
- Issue date Aug 29, 2006
- Texas Instruments Incorporated
- Brian E. Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having optimized shallow junction geometries a...
- Patent number 7,033,879
- Issue date Apr 25, 2006
- Texas Instruments Incorporated
- Brian E. Hornung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS
- Publication number 20240304723
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...
- Publication number 20230230975
- Publication date Jul 20, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS TRANSISTORS
- Publication number 20220209012
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...
- Publication number 20220189954
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-GATE CO-IMPLANT SPECIES TO CONTROL DOPANT PROFILE IN TRANSI...
- Publication number 20210193467
- Publication date Jun 24, 2021
- TEXAS INSTRUMENTS INCORPORATED
- MAHALINGAM NANDAKUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR STRIPPING ONE OR MORE LAYERS FROM A SEMICONDUCTOR WAFER
- Publication number 20200343099
- Publication date Oct 29, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Byron Joseph Palla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP COLLECTOR VERTICAL BIPOLAR TRANSISTOR WITH ENHANCED GAIN
- Publication number 20160079364
- Publication date Mar 17, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Brian E. Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP COLLECTOR VERTICAL BIPOLAR TRANSISTOR WITH ENHANCED GAIN
- Publication number 20150187760
- Publication date Jul 2, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Brian E. Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POCKET COUNTERDOPING FOR GATE-EDGE DIODE LEAKAGE REDUCTION
- Publication number 20140021545
- Publication date Jan 23, 2014
- TEXAS INSTRUMENTS INCORPORATED
- MAHALINGAM NANDAKUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC FORMED WITH DENSIFIED CHEMICAL OXIDE LAYER
- Publication number 20100032813
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Deborah J. Riley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED IMPLANTS WITH DIFFERENT CHARACTERISTICS ON DIFFERENT AXES
- Publication number 20090170259
- Publication date Jul 2, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Layout modification to eliminate line bending caused by line materi...
- Publication number 20060292885
- Publication date Dec 28, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Vladimir Alexeevich Ukraintsev
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Semiconductor device having optimized shallow junction geometries a...
- Publication number 20060189066
- Publication date Aug 24, 2006
- Texas Instruments, Incorporated
- Brian E. Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS transistors and methods of forming same
- Publication number 20060154411
- Publication date Jul 13, 2006
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having optimized shallow junction geometries a...
- Publication number 20060001105
- Publication date Jan 5, 2006
- Brian E. Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having optimized shallow junction geometries a...
- Publication number 20050245021
- Publication date Nov 3, 2005
- Texas Instruments, Incorporated
- Brian E. Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS transistors and methods of forming same
- Publication number 20050059260
- Publication date Mar 17, 2005
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS

Brian E. Hornung

Person

Patents Grantslast 30 patents

Semiconductor device with diffusion suppression and LDD implants an...

Two-rotation gate-edge diode leakage reduction for MOS transistors

Semiconductor device with diffusion suppression and LDD implants an...

Deep collector vertical bipolar transistor with enhanced gain

Deep collector vertical bipolar transistor with enhanced gain

Pocket counterdoping for gate-edge diode leakage reduction

Semiconductor device having optimized shallow junction geometries a...

Semiconductor device having optimized shallow junction geometries a...

Patents Applicationslast 30 patents

TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS

SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...

TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS TRANSISTORS

SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...

THROUGH-GATE CO-IMPLANT SPECIES TO CONTROL DOPANT PROFILE IN TRANSI...

METHOD FOR STRIPPING ONE OR MORE LAYERS FROM A SEMICONDUCTOR WAFER

DEEP COLLECTOR VERTICAL BIPOLAR TRANSISTOR WITH ENHANCED GAIN

DEEP COLLECTOR VERTICAL BIPOLAR TRANSISTOR WITH ENHANCED GAIN

POCKET COUNTERDOPING FOR GATE-EDGE DIODE LEAKAGE REDUCTION

IC FORMED WITH DENSIFIED CHEMICAL OXIDE LAYER

ANGLED IMPLANTS WITH DIFFERENT CHARACTERISTICS ON DIFFERENT AXES

Layout modification to eliminate line bending caused by line materi...

Semiconductor device having optimized shallow junction geometries a...

CMOS transistors and methods of forming same

Semiconductor device having optimized shallow junction geometries a...

Semiconductor device having optimized shallow junction geometries a...

CMOS transistors and methods of forming same