Brian J. Coppa

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Pitch reduction technology using alternating spacer depositions dur...
- Patent number 11,935,756
- Issue date Mar 19, 2024
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitch reduction technology using alternating spacer depositions dur...
- Patent number 11,335,563
- Issue date May 17, 2022
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling dry etch process characteristics using waferless dry cl...
- Patent number 11,273,469
- Issue date Mar 15, 2022
- Tokyo Electron Limited
- Brian J. Coppa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling dry etch process characteristics using waferless dry cl...
- Patent number 10,773,282
- Issue date Sep 15, 2020
- Tokyo Electron Limited
- Brian J. Coppa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitch reduction technology using alternating spacer depositions dur...
- Patent number 10,607,844
- Issue date Mar 31, 2020
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface modification control for etch metric enhancement
- Patent number 10,446,453
- Issue date Oct 15, 2019
- Tokyo Electron Limited
- Brian J. Coppa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Localized process control using a plasma system
- Patent number 10,304,668
- Issue date May 28, 2019
- Tokyo Electron Limited
- Brian J. Coppa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Pitch reduction technology using alternating spacer depositions dur...
- Patent number 10,096,483
- Issue date Oct 9, 2018
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitch reduction technology using alternating spacer depositions dur...
- Patent number 9,761,457
- Issue date Sep 12, 2017
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitch reduction technology using alternating spacer depositions dur...
- Patent number 9,305,782
- Issue date Apr 5, 2016
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitch reduction technology using alternating spacer depositions dur...
- Patent number 8,852,851
- Issue date Oct 7, 2014
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to deposit conformal low temperature SiO2
- Patent number 8,129,289
- Issue date Mar 6, 2012
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Pitch Reduction Technology Using Alternating Spacer Depositions Dur...
- Publication number 20240222131
- Publication date Jul 4, 2024
- Lodestar Licensing Group LLC
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pitch Reduction Technology Using Alternating Spacer Depositions Dur...
- Publication number 20220254644
- Publication date Aug 11, 2022
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING DRY ETCH PROCESS CHARACTERISTICS USING WAFERLESS DRY CL...
- Publication number 20200406315
- Publication date Dec 31, 2020
- TOKYO ELECTRON LIMITED
- Brian J. Coppa
- B08 - CLEANING
Information Patent Application
Pitch Reduction Technology Using Alternating Spacer Depositions Dur...
- Publication number 20200203171
- Publication date Jun 25, 2020
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pitch Reduction Technology Using Alternating Spacer Depositions Dur...
- Publication number 20180286693
- Publication date Oct 4, 2018
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE MODIFICATION CONTROL FOR ETCH METRIC ENHANCEMENT
- Publication number 20180269119
- Publication date Sep 20, 2018
- TOKYO ELECTRON LIMITED
- Brian J. Coppa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pitch Reduction Technology Using Alternating Spacer Depositions Dur...
- Publication number 20170372913
- Publication date Dec 28, 2017
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Localized Process Control Using A Plasma System
- Publication number 20170345626
- Publication date Nov 30, 2017
- TOKYO ELECTRON LIMITED
- Brian J. Coppa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONTROLLING DRY ETCH PROCESS CHARACTERISTICS USING WAFERLESS DRY CL...
- Publication number 20170287791
- Publication date Oct 5, 2017
- TOKYO ELECTRON LIMITED
- Brian J. Coppa
- B08 - CLEANING
Information Patent Application
CONTROLLING DRY ETCH PROCESS CHARACTERISTICS USING WAFERLESS DRY CL...
- Publication number 20170282223
- Publication date Oct 5, 2017
- TOKYO ELECTRON LIMITED
- Brian J. Coppa
- B08 - CLEANING
Information Patent Application
Pitch Reduction Technology Using Alternating Spacer Depositions Dur...
- Publication number 20160203993
- Publication date Jul 14, 2016
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pitch Reduction Technology Using Alternating Spacer Depositions Dur...
- Publication number 20150021744
- Publication date Jan 22, 2015
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation using atomic layer deposition during fabri...
- Publication number 20080179715
- Publication date Jul 31, 2008
- Micron Technology, Inc.
- Brian J. Coppa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to deposit conformal low temperature SiO2
- Publication number 20080085612
- Publication date Apr 10, 2008
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pitch reduction technology using alternating spacer depositions dur...
- Publication number 20080008969
- Publication date Jan 10, 2008
- Micron Technology, Inc.
- Baosuo Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Brian J. Coppa

Person

Patents Grantslast 30 patents

Pitch reduction technology using alternating spacer depositions dur...

Pitch reduction technology using alternating spacer depositions dur...

Controlling dry etch process characteristics using waferless dry cl...

Controlling dry etch process characteristics using waferless dry cl...

Pitch reduction technology using alternating spacer depositions dur...

Surface modification control for etch metric enhancement

Localized process control using a plasma system

Pitch reduction technology using alternating spacer depositions dur...

Pitch reduction technology using alternating spacer depositions dur...

Pitch reduction technology using alternating spacer depositions dur...

Pitch reduction technology using alternating spacer depositions dur...

Method to deposit conformal low temperature SiO2

Patents Applicationslast 30 patents

Pitch Reduction Technology Using Alternating Spacer Depositions Dur...

Pitch Reduction Technology Using Alternating Spacer Depositions Dur...

CONTROLLING DRY ETCH PROCESS CHARACTERISTICS USING WAFERLESS DRY CL...

Pitch Reduction Technology Using Alternating Spacer Depositions Dur...

Pitch Reduction Technology Using Alternating Spacer Depositions Dur...

SURFACE MODIFICATION CONTROL FOR ETCH METRIC ENHANCEMENT

Pitch Reduction Technology Using Alternating Spacer Depositions Dur...

Localized Process Control Using A Plasma System

CONTROLLING DRY ETCH PROCESS CHARACTERISTICS USING WAFERLESS DRY CL...

CONTROLLING DRY ETCH PROCESS CHARACTERISTICS USING WAFERLESS DRY CL...

Pitch Reduction Technology Using Alternating Spacer Depositions Dur...

Pitch Reduction Technology Using Alternating Spacer Depositions Dur...

Shallow trench isolation using atomic layer deposition during fabri...

Method to deposit conformal low temperature SiO2

Pitch reduction technology using alternating spacer depositions dur...