Byung Jin Cho

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Singapore, SG

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a CMOS device with dual metal gate electrodes
- Patent number 7,316,950
- Issue date Jan 8, 2008
- National University of Singapore
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual step source/drain extension junction anneal to reduce the junc...
- Patent number 7,112,499
- Issue date Sep 26, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Chyiu Hyia Poon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of multiple pulse laser annealing to activate ultra-shallow...
- Patent number 6,897,118
- Issue date May 24, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Chyiu-Hyia Poon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Memory Gate Stack Structure
- Publication number 20080217678
- Publication date Sep 11, 2008
- National University of Singapore
- Yan Ny Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermally stable fully silicided Hf silicide metal gate electrode
- Publication number 20060273410
- Publication date Dec 7, 2006
- National University of Singapore
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual step source/drain extension junction anneal to reduce the junc...
- Publication number 20050158956
- Publication date Jul 21, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Chyiu Hyia Poon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating metal-insulator-metal capacitor (MIM) using l...
- Publication number 20040245602
- Publication date Dec 9, 2004
- Sun Jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a CMOS device with dual metal gate electrodes
- Publication number 20040245578
- Publication date Dec 9, 2004
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS