Byung Ryul Ryum

Person

Daejon-shi, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a bipolar device
- Patent number 6,562,688
- Issue date May 13, 2003
- ASB, Inc.
- Tae-Hyeon Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar device and structure thereof
- Patent number 6,552,374
- Issue date Apr 22, 2003
- ASB, Inc.
- Tae-Hyeon Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction device
- Patent number 6,462,397
- Issue date Oct 8, 2002
- ASB, Inc.
- Byung Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing bipolar devices
- Patent number 6,362,066
- Issue date Mar 26, 2002
- ASB Inc.
- Byung Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super self-aligned bipolar transistor and method for fabricating th...
- Patent number 6,337,494
- Issue date Jan 8, 2002
- Electronics and Telecommunications Research Institute
- Byung Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating of super self-aligned bipolar transistor
- Patent number 6,190,984
- Issue date Feb 20, 2001
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a lateral collector structure on a buried ox...
- Patent number 6,140,195
- Issue date Oct 31, 2000
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Si/SiGe MOSFET and method for fabricating the same
- Patent number 6,124,614
- Issue date Sep 26, 2000
- Electronics and Telecommunications Research Insititute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Si/SiGe MOSFET and method for fabricating the same
- Patent number 5,981,345
- Issue date Nov 9, 1999
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super self-aligned bipolar transistor
- Patent number 5,962,879
- Issue date Oct 5, 1999
- Electronisc and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon/silicon germanium heterojunction...
- Patent number 5,897,359
- Issue date Apr 27, 1999
- Electronics and Telecommunications Research Institute
- Deok Ho Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating field oxide isolation region for semiconduct...
- Patent number 5,874,347
- Issue date Feb 23, 1999
- Electronics & Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating heterojunction bipolar transistor
- Patent number 5,798,277
- Issue date Aug 25, 1998
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device isolation region using...
- Patent number 5,696,020
- Issue date Dec 9, 1997
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a super self-aligned bipolar transistor
- Patent number 5,696,007
- Issue date Dec 9, 1997
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-silicon-germanium heterojunction bipolar transistor fabrica...
- Patent number 5,668,022
- Issue date Sep 16, 1997
- Electronics and Telecommunications Research Institute
- Deok-Ho Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making bipolar transistor having an enhanced trench isol...
- Patent number 5,496,745
- Issue date Mar 5, 1996
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating bipolar transistor
- Patent number 5,484,737
- Issue date Jan 16, 1996
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating hetero-junction bipolar transistor having re...
- Patent number 5,459,084
- Issue date Oct 17, 1995
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 5,444,014
- Issue date Aug 22, 1995
- Electronics and Telecommunications Research Institute
- Byung-Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Bipolar transistor
- Publication number 20030075774
- Publication date Apr 24, 2003
- Byung Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing bipolar device and structure thereof
- Publication number 20020094654
- Publication date Jul 18, 2002
- Tae-Hyeon Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing bipolar device and structure thereof
- Publication number 20020079510
- Publication date Jun 27, 2002
- Tae-Hyeon Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar junction device
- Publication number 20020058388
- Publication date May 16, 2002
- Byung Ryul Ryum
- H01 - BASIC ELECTRIC ELEMENTS

Byung Ryul Ryum

Person

Patents Grantslast 30 patents

Method of manufacturing a bipolar device

Method of manufacturing bipolar device and structure thereof

Bipolar junction device

Method for manufacturing bipolar devices

Super self-aligned bipolar transistor and method for fabricating th...

Method for fabricating of super self-aligned bipolar transistor

Method for fabricating a lateral collector structure on a buried ox...

Si/SiGe MOSFET and method for fabricating the same

Si/SiGe MOSFET and method for fabricating the same

Super self-aligned bipolar transistor

Method of manufacturing a silicon/silicon germanium heterojunction...

Method for fabricating field oxide isolation region for semiconduct...

Method for fabricating heterojunction bipolar transistor

Method for fabricating semiconductor device isolation region using...

Method for manufacturing a super self-aligned bipolar transistor

Silicon-silicon-germanium heterojunction bipolar transistor fabrica...

Method for making bipolar transistor having an enhanced trench isol...

Method for fabricating bipolar transistor

Method for fabricating hetero-junction bipolar transistor having re...

Method for fabricating semiconductor device

Patents Applicationslast 30 patents

Bipolar transistor

Method of manufacturing bipolar device and structure thereof

Method of manufacturing bipolar device and structure thereof

Bipolar junction device