Carol Osaka Namba

Person

Walnut, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a gate contact
- Patent number 9,048,184
- Issue date Jun 2, 2015
- Northrop Grumman Systems Corporation
- Carol O. Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor hemt, utilizi...
- Patent number 7,897,446
- Issue date Mar 1, 2011
- Northrop Grumman Systems Corporation
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device having field...
- Patent number 7,800,132
- Issue date Sep 21, 2010
- Northrop Grumman Systems Corporation
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for detecting and adjusting substrate height
- Patent number 7,800,766
- Issue date Sep 21, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High electron mobility transistor having self-aligned miniature fie...
- Patent number 7,750,370
- Issue date Jul 6, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Club extension to a T-gate high electron mobility transistor
- Patent number 7,608,865
- Issue date Oct 27, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING A GATE CONTACT
- Publication number 20140264448
- Publication date Sep 18, 2014
- Northrop Grumman Systems Corporation
- CAROL O. NAMBA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor having self-aligned miniature fie...
- Publication number 20100184262
- Publication date Jul 22, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLUB EXTENSION TO A T-GATE HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20090267115
- Publication date Oct 29, 2009
- Carol Osaka Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor having self-aligned miniature fie...
- Publication number 20090159930
- Publication date Jun 25, 2009
- Northrop Grumman Space and Mission System Corp.
- loulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor semiconductor device having field...
- Publication number 20090108299
- Publication date Apr 30, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus For Detecting and Adjusting Substrate Height
- Publication number 20090078888
- Publication date Mar 26, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- B82 - NANO-TECHNOLOGY

Carol Osaka Namba

Person

Patents Grantslast 30 patents

Method of forming a gate contact

Method of forming a high electron mobility transistor hemt, utilizi...

High electron mobility transistor semiconductor device having field...

Method and apparatus for detecting and adjusting substrate height

High electron mobility transistor having self-aligned miniature fie...

Club extension to a T-gate high electron mobility transistor

Patents Applicationslast 30 patents

METHOD OF FORMING A GATE CONTACT

High electron mobility transistor having self-aligned miniature fie...

CLUB EXTENSION TO A T-GATE HIGH ELECTRON MOBILITY TRANSISTOR

High electron mobility transistor having self-aligned miniature fie...

High electron mobility transistor semiconductor device having field...

Method and Apparatus For Detecting and Adjusting Substrate Height