Carolin Tolksdorf

Person

Steinhoering, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Trench transistor having a doped semiconductor region
- Patent number 9,711,621
- Issue date Jul 18, 2017
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a dynamic gate-drain capacitance
- Patent number 8,829,584
- Issue date Sep 9, 2014
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor, as well as a method for its production
- Patent number 8,815,686
- Issue date Aug 26, 2014
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor, as well as a method for its production
- Patent number 8,431,988
- Issue date Apr 30, 2013
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing
- Patent number 8,324,686
- Issue date Dec 4, 2012
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method for its production
- Patent number 8,294,206
- Issue date Oct 23, 2012
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor with a dynamic gate-drain capacitance
- Patent number 8,273,622
- Issue date Sep 25, 2012
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a dynamic gate-drain capacitance
- Patent number 7,982,253
- Issue date Jul 19, 2011
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having additional capacitance to inherent gate...
- Patent number 7,977,737
- Issue date Jul 12, 2011
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method for producing it
- Patent number 7,973,362
- Issue date Jul 5, 2011
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a charge carrier compensation structure a...
- Patent number 7,973,359
- Issue date Jul 5, 2011
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MISFET and method for fabricating it
- Patent number 7,821,064
- Issue date Oct 26, 2010
- Infineon Technologies Austria AG
- Michael Rueb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral semiconductor component with a drift zone having at least o...
- Patent number 7,777,278
- Issue date Aug 17, 2010
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Trench Transistor Having a Doped Semiconductor Region
- Publication number 20140332885
- Publication date Nov 13, 2014
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION
- Publication number 20130224921
- Publication date Aug 29, 2013
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE
- Publication number 20130009227
- Publication date Jan 10, 2013
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WITH A DYNAMIC GATE-DRAIN CAPACITANCE
- Publication number 20110244646
- Publication date Oct 6, 2011
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION
- Publication number 20110241104
- Publication date Oct 6, 2011
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
- Publication number 20100181627
- Publication date Jul 22, 2010
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE A...
- Publication number 20100044788
- Publication date Feb 25, 2010
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE
- Publication number 20100025748
- Publication date Feb 4, 2010
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INHERENT CAPACITANCES AND METHOD FOR ITS...
- Publication number 20090224302
- Publication date Sep 10, 2009
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20090184373
- Publication date Jul 23, 2009
- Infineon Technologies Austria AG
- Winfried Kaindl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION
- Publication number 20090159927
- Publication date Jun 25, 2009
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
- Publication number 20080237701
- Publication date Oct 2, 2008
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral compensation component
- Publication number 20080203470
- Publication date Aug 28, 2008
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SEMICONDUCTOR COMPONENT WITH A DRIFT ZONE HAVING AT LEAST O...
- Publication number 20080179672
- Publication date Jul 31, 2008
- INFINEON TECHNOLOGIES AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral MISFET and method for fabricating it
- Publication number 20060261384
- Publication date Nov 23, 2006
- Michael Rueb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral trench transistor, as well as a method for its production
- Publication number 20060118862
- Publication date Jun 8, 2006
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral semiconductor component with a drift zone having at least o...
- Publication number 20060006386
- Publication date Jan 12, 2006
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS

Carolin Tolksdorf

Person

Patents Grantslast 30 patents

Trench transistor having a doped semiconductor region

Semiconductor device with a dynamic gate-drain capacitance

Lateral trench transistor, as well as a method for its production

Lateral trench transistor, as well as a method for its production

Semiconductor device and method for manufacturing

Integrated circuit device and method for its production

Semiconductor with a dynamic gate-drain capacitance

Semiconductor device with a dynamic gate-drain capacitance

Semiconductor device having additional capacitance to inherent gate...

Semiconductor component and method for producing it

Semiconductor device with a charge carrier compensation structure a...

Lateral MISFET and method for fabricating it

Lateral semiconductor component with a drift zone having at least o...

Patents Applicationslast 30 patents

Trench Transistor Having a Doped Semiconductor Region

LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION

SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE

SEMICONDUCTOR WITH A DYNAMIC GATE-DRAIN CAPACITANCE

INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING

SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE A...

SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE

SEMICONDUCTOR DEVICE WITH INHERENT CAPACITANCES AND METHOD FOR ITS...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT

Lateral compensation component

LATERAL SEMICONDUCTOR COMPONENT WITH A DRIFT ZONE HAVING AT LEAST O...

Lateral MISFET and method for fabricating it

Lateral trench transistor, as well as a method for its production

Lateral semiconductor component with a drift zone having at least o...