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Catherine Decobert
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Pourrieres, FR
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Patents Grants
last 30 patents
Information
Patent Grant
Method of determining defective die containing non-volatile memory...
Patent number
12,020,762
Issue date
Jun 25, 2024
Silicon Storage Technology, Inc.
Yuri Tkachev
G11 - INFORMATION STORAGE
Information
Patent Grant
Method of forming a device with split gate non-volatile memory cell...
Patent number
11,594,453
Issue date
Feb 28, 2023
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming split gate memory cells with thinned side edge tu...
Patent number
11,362,218
Issue date
Jun 14, 2022
Silicon Storage Technology, Inc.
Jinho Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a device with FinFET split gate non-volatile memo...
Patent number
11,114,451
Issue date
Sep 7, 2021
Silicon Storage Technology, Inc.
Feng Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming split gate memory cells with thinned tunnel oxide
Patent number
11,018,147
Issue date
May 25, 2021
Silicon Storage Technology, Inc.
Jinho Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Memory cell with floating gate, coupling gate and erase gate, and m...
Patent number
10,998,325
Issue date
May 4, 2021
Silicon Storage Technology, Inc.
Catherine Decobert
G11 - INFORMATION STORAGE
Information
Patent Grant
Split gate non-volatile memory cells with FinFET structure and HKMG...
Patent number
10,937,794
Issue date
Mar 2, 2021
Silicon Storage Technology, Inc.
Feng Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Split gate non-volatile memory cells and logic devices with FINFET...
Patent number
10,818,680
Issue date
Oct 27, 2020
Silicon Storage Technology, Inc.
Feng Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
FinFET-based split gate non-volatile flash memory with extended sou...
Patent number
10,797,142
Issue date
Oct 6, 2020
Silicon Storage Technology, Inc.
Serguei Jourba
G11 - INFORMATION STORAGE
Information
Patent Grant
Split gate non-volatile memory cells with three-dimensional FinFET...
Patent number
10,727,240
Issue date
Jul 28, 2020
Silicon Store Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making split gate non-volatile memory cells with three-di...
Patent number
10,644,012
Issue date
May 5, 2020
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Split gate non-volatile memory cells and logic devices with FinFET...
Patent number
10,468,428
Issue date
Nov 5, 2019
Silicon Storage Technology, Inc.
Feng Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Two transistor FinFET-based split gate non-volatile floating gate f...
Patent number
10,312,247
Issue date
Jun 4, 2019
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Memory Device Formed On Silicon-On-Insulator Substrate, And Method...
Publication number
20240389319
Publication date
Nov 21, 2024
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE WITH COMMUNICATION RING
Publication number
20240274591
Publication date
Aug 15, 2024
Silicon Storage Technology, Inc.
Jinho KIM
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD OF FORMING A DEVICE WITH PLANAR SPLIT GATE NON-VOLATILE MEMO...
Publication number
20230290864
Publication date
Sep 14, 2023
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of Determining Defective Die Containing Non-volatile Memory...
Publication number
20230101585
Publication date
Mar 30, 2023
Silicon Storage Technology, Inc.
Yuri Tkachev
G11 - INFORMATION STORAGE
Information
Patent Application
Method Of Forming A Device With Split Gate Non-volatile Memory Cell...
Publication number
20220231037
Publication date
Jul 21, 2022
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method Of Forming Split Gate Memory Cells With Thinned Side Edge Tu...
Publication number
20210399127
Publication date
Dec 23, 2021
Silicon Storage Technology, Inc.
Jinho Kim
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method Of Forming A Device With FINFET Split Gate Non-volatile Memo...
Publication number
20210272973
Publication date
Sep 2, 2021
Sillicon Storage Technology, Inc.
Feng Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method Of Forming A Device With Split Gate Non-volatile Memory Cell...
Publication number
20210193671
Publication date
Jun 24, 2021
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Memory Cell With Floating Gate, Coupling Gate And Erase Gate, And M...
Publication number
20200176460
Publication date
Jun 4, 2020
Silicon Storage Technology, Inc.
CATHERINE DECOBERT
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FINFET-Based Split Gate Non-volatile Flash Memory With Extended Sou...
Publication number
20200176578
Publication date
Jun 4, 2020
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Split Gate Non-volatile Memory Cells With FINFET Structure And HKMG...
Publication number
20200176459
Publication date
Jun 4, 2020
Feng Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Split Gate Non-Volatile Memory Cells With Three-Dimensional FINFET...
Publication number
20200013786
Publication date
Jan 9, 2020
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method Of Making Split Gate Non-Volatile Memory Cells With Three-Di...
Publication number
20200013788
Publication date
Jan 9, 2020
Silicon Storage Technology, Inc.
Serguei Jourba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Split Gate Non-volatile Memory Cells And Logic Devices With FINFET...
Publication number
20200013789
Publication date
Jan 9, 2020
Silicon Storage Technology, Inc.
FENG ZHOU
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELLS AND LOGIC DEVICES WITH FINFET...
Publication number
20190326305
Publication date
Oct 24, 2019
Silicon Storage Technology, Inc.
FENG ZHOU
H01 - BASIC ELECTRIC ELEMENTS