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Chan-Lon Yang
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Los Gatos, CA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Methods for cleaning contact openings to reduce contact resistance
Patent number
7,253,094
Issue date
Aug 7, 2007
Cypress Semiconductor Corp.
Jie Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gate etch process
Patent number
7,112,834
Issue date
Sep 26, 2006
Cypress Semiconductor Corporation
Benjamin Schwarz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
In situ hard mask approach for self-aligned contact etch
Patent number
7,078,334
Issue date
Jul 18, 2006
Cypress Semiconductor Corporation
Saurabh Dutta Chowdhury
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Aluminum-filled via structure with barrier layer
Patent number
6,977,217
Issue date
Dec 20, 2005
Cypress Semiconductor Corporation
Mira Ben-Tzur
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Methods of forming semiconductor structures having reduced defects,...
Patent number
6,890,859
Issue date
May 10, 2005
Cypress Semiconductor Corporation
Hanna A. Bamnolker
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gate etch process
Patent number
6,699,795
Issue date
Mar 2, 2004
Cypress Semiconductor Corp.
Benjamin Schwarz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Plasma reactor using inductive RF coupling, and processes
Patent number
6,545,420
Issue date
Apr 8, 2003
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Plasma reactor using inductive RF coupling, and processes
Patent number
6,518,195
Issue date
Feb 11, 2003
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Magnetic confinement in a plasma reactor having an RF bias electrode
Patent number
6,488,807
Issue date
Dec 3, 2002
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Structure and method for making a notched transistor with spacers
Patent number
6,461,904
Issue date
Oct 8, 2002
Cypress Semiconductor Corp.
Bo Jin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for processing substrates using gaseous silicon scavenger
Patent number
6,444,137
Issue date
Sep 3, 2002
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
Patent number
6,440,866
Issue date
Aug 27, 2002
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Plasma etching method
Patent number
6,406,640
Issue date
Jun 18, 2002
Cypress Semiconductor Corporation
Chan-lon Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Selective SAC etch process
Patent number
6,403,488
Issue date
Jun 11, 2002
Cypress Semiconductor Corp.
Chan-Lon Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High temperature silicon surface providing high selectivity in an o...
Patent number
6,399,514
Issue date
Jun 4, 2002
Applied Materials, Inc.
Jeffrey Marks
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Plasma etch processes
Patent number
6,251,792
Issue date
Jun 26, 2001
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
Patent number
6,218,312
Issue date
Apr 17, 2001
Applied Materials Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Method and apparatus for depositing an etch stop layer
Patent number
6,209,484
Issue date
Apr 3, 2001
Applied Materials, Inc.
Judy H. Huang
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Oxide etch process with high selectivity to nitride suitable for us...
Patent number
6,194,325
Issue date
Feb 27, 2001
Applied Materials Inc.
Chan Lon Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Oxide etch process with high selectivity to nitride suitable for us...
Patent number
6,184,150
Issue date
Feb 6, 2001
Applied Materials Inc.
Chan-Lon Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High selectivity oxide etch process for integrated circuit structures
Patent number
6,171,974
Issue date
Jan 9, 2001
Applied Materials, Inc.
Jeffrey Marks
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Plasma etching method
Patent number
6,165,375
Issue date
Dec 26, 2000
Cypress Semiconductor Corporation
Chan-lon Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method and apparatus for depositing an etch stop layer
Patent number
6,127,262
Issue date
Oct 3, 2000
Applied Materials, Inc.
Judy H. Huang
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Process used in an RF coupled plasma reactor
Patent number
6,068,784
Issue date
May 30, 2000
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
Patent number
6,036,877
Issue date
Mar 14, 2000
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
Patent number
6,024,826
Issue date
Feb 15, 2000
Applied Materials, Inc.
Kenneth Collins
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
Patent number
5,990,017
Issue date
Nov 23, 1999
Applied Materials, Inc.
Kenneth Collins
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Plasma reactor and processes using RF inductive coupling and scaven...
Patent number
5,888,414
Issue date
Mar 30, 1999
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Silicon scavenger in an inductively coupled RF plasma reactor
Patent number
5,556,501
Issue date
Sep 17, 1996
Applied Materials, Inc.
Kenneth S. Collins
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Selectivity for etching an oxide over a nitride
Patent number
5,423,945
Issue date
Jun 13, 1995
Applied Materials, Inc.
Jeffrey Marks
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
PROCESSES USED IN AN INDUCTIVELY COUPLED PLASMA REACTOR
Publication number
20020004309
Publication date
Jan 10, 2002
KENNETH S. COLLINS
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...