Chan-Lon Yang

Person

Los Gatos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for cleaning contact openings to reduce contact resistance
- Patent number 7,253,094
- Issue date Aug 7, 2007
- Cypress Semiconductor Corp.
- Jie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate etch process
- Patent number 7,112,834
- Issue date Sep 26, 2006
- Cypress Semiconductor Corporation
- Benjamin Schwarz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ hard mask approach for self-aligned contact etch
- Patent number 7,078,334
- Issue date Jul 18, 2006
- Cypress Semiconductor Corporation
- Saurabh Dutta Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-filled via structure with barrier layer
- Patent number 6,977,217
- Issue date Dec 20, 2005
- Cypress Semiconductor Corporation
- Mira Ben-Tzur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor structures having reduced defects,...
- Patent number 6,890,859
- Issue date May 10, 2005
- Cypress Semiconductor Corporation
- Hanna A. Bamnolker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate etch process
- Patent number 6,699,795
- Issue date Mar 2, 2004
- Cypress Semiconductor Corp.
- Benjamin Schwarz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor using inductive RF coupling, and processes
- Patent number 6,545,420
- Issue date Apr 8, 2003
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor using inductive RF coupling, and processes
- Patent number 6,518,195
- Issue date Feb 11, 2003
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetic confinement in a plasma reactor having an RF bias electrode
- Patent number 6,488,807
- Issue date Dec 3, 2002
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structure and method for making a notched transistor with spacers
- Patent number 6,461,904
- Issue date Oct 8, 2002
- Cypress Semiconductor Corp.
- Bo Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing substrates using gaseous silicon scavenger
- Patent number 6,444,137
- Issue date Sep 3, 2002
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 6,440,866
- Issue date Aug 27, 2002
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma etching method
- Patent number 6,406,640
- Issue date Jun 18, 2002
- Cypress Semiconductor Corporation
- Chan-lon Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective SAC etch process
- Patent number 6,403,488
- Issue date Jun 11, 2002
- Cypress Semiconductor Corp.
- Chan-Lon Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature silicon surface providing high selectivity in an o...
- Patent number 6,399,514
- Issue date Jun 4, 2002
- Applied Materials, Inc.
- Jeffrey Marks
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma etch processes
- Patent number 6,251,792
- Issue date Jun 26, 2001
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 6,218,312
- Issue date Apr 17, 2001
- Applied Materials Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for depositing an etch stop layer
- Patent number 6,209,484
- Issue date Apr 3, 2001
- Applied Materials, Inc.
- Judy H. Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Oxide etch process with high selectivity to nitride suitable for us...
- Patent number 6,194,325
- Issue date Feb 27, 2001
- Applied Materials Inc.
- Chan Lon Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide etch process with high selectivity to nitride suitable for us...
- Patent number 6,184,150
- Issue date Feb 6, 2001
- Applied Materials Inc.
- Chan-Lon Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High selectivity oxide etch process for integrated circuit structures
- Patent number 6,171,974
- Issue date Jan 9, 2001
- Applied Materials, Inc.
- Jeffrey Marks
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma etching method
- Patent number 6,165,375
- Issue date Dec 26, 2000
- Cypress Semiconductor Corporation
- Chan-lon Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for depositing an etch stop layer
- Patent number 6,127,262
- Issue date Oct 3, 2000
- Applied Materials, Inc.
- Judy H. Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process used in an RF coupled plasma reactor
- Patent number 6,068,784
- Issue date May 30, 2000
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 6,036,877
- Issue date Mar 14, 2000
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 6,024,826
- Issue date Feb 15, 2000
- Applied Materials, Inc.
- Kenneth Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor with heated source of a polymer-hardening precursor...
- Patent number 5,990,017
- Issue date Nov 23, 1999
- Applied Materials, Inc.
- Kenneth Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor and processes using RF inductive coupling and scaven...
- Patent number 5,888,414
- Issue date Mar 30, 1999
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon scavenger in an inductively coupled RF plasma reactor
- Patent number 5,556,501
- Issue date Sep 17, 1996
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selectivity for etching an oxide over a nitride
- Patent number 5,423,945
- Issue date Jun 13, 1995
- Applied Materials, Inc.
- Jeffrey Marks
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROCESSES USED IN AN INDUCTIVELY COUPLED PLASMA REACTOR
- Publication number 20020004309
- Publication date Jan 10, 2002
- KENNETH S. COLLINS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Chan-Lon Yang

Person

Patents Grantslast 30 patents

Methods for cleaning contact openings to reduce contact resistance

Gate etch process

In situ hard mask approach for self-aligned contact etch

Aluminum-filled via structure with barrier layer

Methods of forming semiconductor structures having reduced defects,...

Gate etch process

Plasma reactor using inductive RF coupling, and processes

Plasma reactor using inductive RF coupling, and processes

Magnetic confinement in a plasma reactor having an RF bias electrode

Structure and method for making a notched transistor with spacers

Method for processing substrates using gaseous silicon scavenger

Plasma reactor with heated source of a polymer-hardening precursor...

Plasma etching method

Selective SAC etch process

High temperature silicon surface providing high selectivity in an o...

Plasma etch processes

Plasma reactor with heated source of a polymer-hardening precursor...

Method and apparatus for depositing an etch stop layer

Oxide etch process with high selectivity to nitride suitable for us...

Oxide etch process with high selectivity to nitride suitable for us...

High selectivity oxide etch process for integrated circuit structures

Plasma etching method

Method and apparatus for depositing an etch stop layer

Process used in an RF coupled plasma reactor

Plasma reactor with heated source of a polymer-hardening precursor...

Plasma reactor with heated source of a polymer-hardening precursor...

Plasma reactor with heated source of a polymer-hardening precursor...

Plasma reactor and processes using RF inductive coupling and scaven...

Silicon scavenger in an inductively coupled RF plasma reactor

Selectivity for etching an oxide over a nitride

Patents Applicationslast 30 patents

PROCESSES USED IN AN INDUCTIVELY COUPLED PLASMA REACTOR