This is a divisional application Ser. No. 08/041,118 filed Apr. 1, 1993, now U.S. Pat. No. 6,068,784 which is a continuation application of Ser. No. 07/722,340 filed Jun. 27, 1991 now abandoned.
Number | Name | Date | Kind |
---|---|---|---|
4123316 | Tsuchimoto | Oct 1978 | A |
4261762 | King | Apr 1981 | A |
4350578 | Frieser et al. | Sep 1982 | A |
4368092 | Steinberg et al. | Jan 1983 | A |
4371412 | Nishizawa | Feb 1983 | A |
4427516 | Levinstein et al. | Jan 1984 | A |
4427762 | Takahashi et al. | Jan 1984 | A |
4430547 | Yoneda et al. | Feb 1984 | A |
4457359 | Holden | Jul 1984 | A |
4512391 | Harra | Apr 1985 | A |
4565601 | Kakehi et al. | Jan 1986 | A |
4572759 | Benzing | Feb 1986 | A |
4579080 | Martin et al. | Apr 1986 | A |
4711698 | Douglas | Dec 1987 | A |
4755345 | Baity, Jr. et al. | Jul 1988 | A |
4756810 | Lamont, Jr. et al. | Jul 1988 | A |
4786352 | Benzing | Nov 1988 | A |
4786359 | Stark et al. | Nov 1988 | A |
4793897 | Dunfield et al. | Dec 1988 | A |
4793945 | Siren | Dec 1988 | A |
4807016 | Douglas | Feb 1989 | A |
4810935 | Boswell | Mar 1989 | A |
4828369 | Hotomi | May 1989 | A |
4842683 | Cheng et al. | Jun 1989 | A |
4844775 | Keeble | Jul 1989 | A |
4849675 | Muller | Jul 1989 | A |
4859908 | Yoshida et al. | Aug 1989 | A |
4870245 | Price et al. | Sep 1989 | A |
4918031 | Flamm et al. | Apr 1990 | A |
4948458 | Ogle | Aug 1990 | A |
4948750 | Kausche et al. | Aug 1990 | A |
4963242 | Sato et al. | Oct 1990 | A |
4990229 | Campbell et al. | Feb 1991 | A |
5000113 | Wang et al. | Mar 1991 | A |
5006220 | Hijikata et al. | Apr 1991 | A |
5015330 | Okumura et al. | May 1991 | A |
5032205 | Hershkowitz et al. | Jul 1991 | A |
5074456 | Degner et al. | Dec 1991 | A |
5085727 | Steger | Feb 1992 | A |
5091049 | Campbell et al. | Feb 1992 | A |
5122251 | Campbell et al. | Jun 1992 | A |
5169487 | Langley et al. | Dec 1992 | A |
5173412 | Kiener et al. | Dec 1992 | A |
5187454 | Collins et al. | Feb 1993 | A |
5203956 | Hansen | Apr 1993 | A |
5210466 | Collins et al. | May 1993 | A |
5226154 | Kondoh | Jul 1993 | A |
5241245 | Barnes et al. | Aug 1993 | A |
5249251 | Egalon et al. | Sep 1993 | A |
5258824 | Carlson et al. | Nov 1993 | A |
5276693 | Long et al. | Jan 1994 | A |
5277751 | Ogle | Jan 1994 | A |
5326404 | Sato | Jul 1994 | A |
5346578 | Benzing et al. | Sep 1994 | A |
5349313 | Collins et al. | Sep 1994 | A |
5392018 | Collins et al. | Feb 1995 | A |
5399237 | Keswick et al. | Mar 1995 | A |
5401350 | Patrick et al. | Mar 1995 | A |
5414246 | Shapona | May 1995 | A |
5421891 | Campbell et al. | Jun 1995 | A |
5423945 | Marks et al. | Jun 1995 | A |
5449432 | Hanawa | Sep 1995 | A |
5468341 | Samukawa | Nov 1995 | A |
5477975 | Rice et al. | Dec 1995 | A |
5514246 | Blalock | May 1996 | A |
5529657 | Ishii | Jun 1996 | A |
5556501 | Collins et al. | Sep 1996 | A |
5607542 | Wu et al. | Mar 1997 | A |
Number | Date | Country |
---|---|---|
39 42964 | Jun 1991 | DE |
0 403 418 | Dec 1990 | EP |
0 413 282 | Feb 1991 | EP |
0 520 519 | Dec 1992 | EP |
0 552 490 | Jul 1993 | EP |
0 552 491 | Jul 1993 | EP |
0 596 551 | May 1994 | EP |
0 601 468 | Jun 1994 | EP |
0 641 013 | Mar 1995 | EP |
0 702 391 | Mar 1995 | EP |
0 651 434 | May 1995 | EP |
0 680 072 | Nov 1995 | EP |
0 710 055 | May 1996 | EP |
0 727 807 | Aug 1996 | EP |
0 727 923 | Aug 1996 | EP |
0 742 577 | Nov 1996 | EP |
0 756 309 | Jan 1997 | EP |
0 807 952 | Nov 1997 | EP |
231197 | Nov 1990 | GB |
55-9464 | Jan 1980 | JP |
55-154582 | Dec 1980 | JP |
57-155732 | Sep 1982 | JP |
61-147531 | Dec 1984 | JP |
61-91377 | May 1986 | JP |
61-142744 | Jun 1986 | JP |
62-7268 | Jan 1987 | JP |
62-12129 | Jan 1987 | JP |
62-249422 | Oct 1987 | JP |
62-254428 | Nov 1987 | JP |
63-9120 | Jan 1988 | JP |
63-155728 | Jun 1988 | JP |
64-15928 | Jan 1989 | JP |
4-94121 | Mar 1992 | JP |
WO 9110341 | Jul 1991 | WO |
WO 9220833 | Nov 1992 | WO |
WO 9708734 | Mar 1997 | WO |
Entry |
---|
Coburn, W.J., “Increasing the Etch Rate Ratio oSi02/Si in Fluorocarbon Plasma Etching,” IBM Technical Disclosure, vol. 19, No. 10, Mar. 1997. |
Cook, J.M., Ibbatson, D.E., and Flamm, D.L., “Application of a low-pressure radio frequency discharge source to polysilicon gate etching,” J. Vac. Sci. Technol., vol. B8, No. 1, Jan./Feb. 1990, pp. 1-5. |
Horiike, Y., Kubota, K., Shindo, H., and Fukasawa, T., “High rate and highly selective Si02 etching employing inductively coupled plasma and discussion on reaction kinetics,” J. Vac. Sci. Technol., vol. 13, No. 3, May/Jun. 1995, pp. 801-809. |
Lee, H., Dong-II, Y., and Whang, J., “The effects of magnetic fields on a planar inductively coupled argon plasma,” Plasma Sources Sci. Technol., 5(1996), pp. 383-388. |
Tynan, GR., Bailey III, A.D., Campbell, G.A., Charatan, R., de Chambrier, A., Gibson, G., Hemker, D.J., Jones, K., Kuthi, A., Lee, C., and Wilcoxson, M., “Characterization of an Azimuthally Symmetric Helicon Wave High Density Plasma Source,” Trikon Technologies, Inc., Japan, Jul. 1997. |
European Patent Office Communication Pursuant to Article 96(2) and Rule 51(2) EPC for Application No. 94307307.2-2208, mailed Jan., 1996. |
Patent Abstracts of Japan, Publication No. 57045927 A, Mar. 16, 1982 (Fujitsu Ltd). |
Patent Abstracts of Japan, Publication No. 62052714 A, Mar. 7, 1987 (Olympus Optical Co. Ltd; Toagosei Chem Ind Co Ltd). |
Patent Abstracts of Japan, Publication No. 06196446 A, Jul. 15, 1994 (Nec Corp). |
Patent Abstracts of Japan, Publication No. 07288196 A, Oct. 31, 1995 (Tokyo Electron Ltd). |
Patent Abstracts of Japan, Publication No. 08017799 A, Jan. 19, 1996 (Plasma Syst: KK). |
Lieberman, M.A., and Ashida, S., “Global models of pulse-power-modulated high-density, low pressure discharges,” Plasma Sources Sci. Technol., 5(1996), pp. 145-158. |
Matsuo, Seitaro, “Selective Ecthing of si02 Relative to Si by Plasma Reactive Sputter Etching,” J. Vac. Sc. Technology, vol. 17, No. 2, Mar.-Apr. 1980. |
Oerhlein, G., and Lee, Y., “Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms,” J. Vac. Sci. Technol., vol. 5, No. 4, Jul./Aug. 1987, pp. 1585-1594. |
Perry, A.J., Vender, D., and Boswell, R.W., “The application of the helicon source to plasma processing,” J. Vac. Sci. Technol., vol. 9, No. 2, Mar./Apr. 1991, pp. 310-317. |
Samukawa, S., and Ohtake, H., “Pulse-time Modulated Plasma Etching for Precise ULSI Patterning,” Abstract No. 162, Microelectrics Research Laboratories, NEC Corporation, Japan, May 1996, pp. 217-218. |
Shibano, T., Fujiwara, N., Hirayama, M., Nagata, H., and Demizu, K., “Etching of Si02 by low energy CF+x and F+ions,” Appl. Phys. Lett., vol. 63, No. 17, Oct. 25, 1993, pp. 2336-2338. |
Suagi, H., and Nakamura, K., “Diagnostics and control of radicals in an inductively coupled etching reactor,” J. Vac. Sci. Technol., vol. 13, No. 3, May/Jun. 1995, pp. 8878-8893. |
Number | Date | Country | |
---|---|---|---|
Parent | 07/722340 | Jun 1991 | US |
Child | 08/041118 | US |