Chandrasekharan Kothandaraman

Person

New York, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual spacer for double magnetic tunnel junction devices
- Patent number 12,063,867
- Issue date Aug 13, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Wide-base magnetic tunnel junction device with sidewall polymer spacer
- Patent number 11,980,039
- Issue date May 7, 2024
- International Business Machines Corporation
- Nathan P. Marchack
Information Patent Grant
Magnetic tunnel junction device with air gap
- Patent number 11,937,512
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G11 - INFORMATION STORAGE
Information Patent Grant
On-chip integration of a high-efficiency and a high-retention inver...
- Patent number 11,844,284
- Issue date Dec 12, 2023
- International Business Machines Corporation
- Pouya Hashemi
Information Patent Grant
Double magnetic tunnel junction device
- Patent number 11,778,921
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MJT based anti-fuses with low programming voltage
- Patent number 11,563,054
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Dimitri Houssameddine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction based true random number generator
- Patent number 11,487,508
- Issue date Nov 1, 2022
- International Business Machines Corporation
- Rasit O. Topaloglu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multilayered magnetic free layer structure in magnetic tunnel junct...
- Patent number 11,226,252
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Virat Vasav Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) for multi-key encryption
- Patent number 11,205,015
- Issue date Dec 21, 2021
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of manufacturing inductors in BEOL with particulate magnetic...
- Patent number 10,984,948
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory (MRAM) structure with small bottom el...
- Patent number 10,957,738
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoscale magnetic tunnel junction arrays for sub-micrometer resolu...
- Patent number 10,942,072
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G01 - MEASURING TESTING
Information Patent Grant
Fabricating embedded magnetoresistive random access memory device w...
- Patent number 10,937,828
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond-like carbon hardmask for MRAM
- Patent number 10,840,441
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Anthony Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
OTP elements with high aspect ratio MTJ
- Patent number 10,784,268
- Issue date Sep 22, 2020
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inductors in BEOL with particulate magnetic cores
- Patent number 10,741,327
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-lithographic magnetic tunnel junctions for magnetic random acce...
- Patent number 10,741,752
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ containing device containing a bottom electrode embedded in dia...
- Patent number 10,727,398
- Issue date Jul 28, 2020
- International Business Machines Corporation
- Nathan P. Marchack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed seed layer for magnetic random access memory
- Patent number 10,700,263
- Issue date Jun 30, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned and misalignment-tolerant landing pad for magnetoresis...
- Patent number 10,644,232
- Issue date May 5, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cryogenic patterning of magnetic tunnel junctions
- Patent number 10,622,553
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through-silicon via with improved substrate contact for reduced thr...
- Patent number 10,446,484
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- John M. Safran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction based anti-fuses with cascoded transistors
- Patent number 10,374,152
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM margin recovery during burn-in
- Patent number 10,373,678
- Issue date Aug 6, 2019
- International Business Machines Corporation
- William V. Huott
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi time programmable memories using local implantation in high-K...
- Patent number 10,361,093
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective growth of seed layer for magneto-resistive random access...
- Patent number 10,355,204
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM margin recovery during burn-in
- Patent number 10,332,591
- Issue date Jun 25, 2019
- International Business Machines Corporation
- William V. Huott
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi time programmable memories using local implantation in high-K...
- Patent number 10,211,064
- Issue date Feb 19, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain monitoring of MRAM arrays
- Patent number 10,203,199
- Issue date Feb 12, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
Cryogenic patterning of magnetic tunnel junctions
- Patent number 10,170,697
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL SPACER FOR DOUBLE MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20230039834
- Publication date Feb 9, 2023
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
ON-CHIP INTEGRATION OF A HIGH-EFFICIENCY AND A HIGH-RETENTION INVER...
- Publication number 20220416156
- Publication date Dec 29, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE-BASE MAGNETIC TUNNEL JUNCTION DEVICE WITH SIDEWALL POLYMER SPACER
- Publication number 20220406841
- Publication date Dec 22, 2022
- International Business Machines Corporation
- NATHAN P. MARCHACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE WITH AIR GAP
- Publication number 20220393102
- Publication date Dec 8, 2022
- International Business Machines Corporation
- Chandrasekharan KOTHANDARAMAN
- G11 - INFORMATION STORAGE
Information Patent Application
DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20220199898
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY (MRAM) STRUCTURE WITH SMALL BOTTOM EL...
- Publication number 20210151503
- Publication date May 20, 2021
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION BASED TRUE RANDOM NUMBER GENERATOR
- Publication number 20200326911
- Publication date Oct 15, 2020
- International Business Machines Corporation
- Rasit O. Topaloglu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY (MRAM) STRUCTURE WITH SMALL BOTTOM EL...
- Publication number 20200321394
- Publication date Oct 8, 2020
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OTP ELEMENTS WITH HIGH ASPECT RATIO MTJ
- Publication number 20200303386
- Publication date Sep 24, 2020
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MJT BASED ANTI-FUSES WITH LOW PROGRAMMING VOLTAGE
- Publication number 20200303452
- Publication date Sep 24, 2020
- International Business Machines Corporation
- Dimitri Houssameddine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) FOR MULTI-KEY ENCRYPTION
- Publication number 20200279058
- Publication date Sep 3, 2020
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MTJ CONTAINING DEVICE CONTAINING A BOTTOM ELECTRODE EMBEDDED IN DIA...
- Publication number 20200243750
- Publication date Jul 30, 2020
- International Business Machines Corporation
- Nathan P. Marchack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE IN MAGNETIC TUNNEL JUNCT...
- Publication number 20200217735
- Publication date Jul 9, 2020
- International Business Machines Corporation
- Virat Vasav Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSCALE MAGNETIC TUNNEL JUNCTION ARRAYS FOR SUB-MICROMETER RESOLU...
- Publication number 20200158582
- Publication date May 21, 2020
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G01 - MEASURING TESTING
Information Patent Application
SUB-LITHOGRAPHIC MAGNETIC TUNNEL JUNCTIONS FOR MAGNETIC RANDOM ACCE...
- Publication number 20200144495
- Publication date May 7, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Application
FABRICATING EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE W...
- Publication number 20200119088
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Pouya HASHEMI
- G11 - INFORMATION STORAGE
Information Patent Application
Diamond-Like Carbon Hardmask for MRAM
- Publication number 20200091418
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Anthony Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GROWTH OF SEED LAYER FOR MAGNETO-RESISTIVE RANDOM ACCESS...
- Publication number 20190288191
- Publication date Sep 19, 2019
- International Business Machines Corporation
- ANTHONY J. ANNUNZIATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALED SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20190237659
- Publication date Aug 1, 2019
- International Business Machines Corporation
- Anthony J. ANNUNZIATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED AND MISALIGNMENT-TOLERANT LANDING PAD FOR MAGNETORESIS...
- Publication number 20190207099
- Publication date Jul 4, 2019
- International Business Machines Corporation
- ANTHONY J. ANNUNZIATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASSESSING AND MINIMIZING INTEGRATED CIRCUIT (IC) CHIP WARPAGE DURIN...
- Publication number 20190120708
- Publication date Apr 25, 2019
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G01 - MEASURING TESTING
Information Patent Application
CRYOGENIC PATTERNING OF MAGNETIC TUNNEL JUNCTIONS
- Publication number 20190115528
- Publication date Apr 18, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM MARGIN RECOVERY DURING BURN-IN
- Publication number 20180322915
- Publication date Nov 8, 2018
- International Business Machines Corporation
- William V. Huott
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM MARGIN RECOVERY DURING BURN-IN
- Publication number 20180322916
- Publication date Nov 8, 2018
- International Business Machines Corporation
- William V. Huott
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM MARGIN RECOVERY DURING BURN-IN
- Publication number 20180322917
- Publication date Nov 8, 2018
- International Business Machines Corporation
- William V. Huott
- G11 - INFORMATION STORAGE
Information Patent Application
STRAIN MONITORING OF MRAM ARRAYS
- Publication number 20180259322
- Publication date Sep 13, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GROWTH OF SEED LAYER FOR MAGNETO-RESISTIVE RANDOM ACCESS...
- Publication number 20180261763
- Publication date Sep 13, 2018
- International Business Machines Corporation
- ANTHONY J. ANNUNZIATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN MONITORING OF MRAM ARRAYS
- Publication number 20180259323
- Publication date Sep 13, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) BASED TRUE RANDOM NUMBER GENERATORS...
- Publication number 20180239590
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Suyog Gupta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INDUCTORS IN BEOL WITH PARTICULATE MAGNETIC CORES
- Publication number 20180218824
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- H01 - BASIC ELECTRIC ELEMENTS

Chandrasekharan Kothandaraman

Person

Patents Grantslast 30 patents

Dual spacer for double magnetic tunnel junction devices

Wide-base magnetic tunnel junction device with sidewall polymer spacer

Magnetic tunnel junction device with air gap

On-chip integration of a high-efficiency and a high-retention inver...

Double magnetic tunnel junction device

MJT based anti-fuses with low programming voltage

Magnetic tunnel junction based true random number generator

Multilayered magnetic free layer structure in magnetic tunnel junct...

Magnetic tunnel junction (MTJ) for multi-key encryption

Method of manufacturing inductors in BEOL with particulate magnetic...

Magnetic random access memory (MRAM) structure with small bottom el...

Nanoscale magnetic tunnel junction arrays for sub-micrometer resolu...

Fabricating embedded magnetoresistive random access memory device w...

Diamond-like carbon hardmask for MRAM

OTP elements with high aspect ratio MTJ

Inductors in BEOL with particulate magnetic cores

Sub-lithographic magnetic tunnel junctions for magnetic random acce...

MTJ containing device containing a bottom electrode embedded in dia...

Annealed seed layer for magnetic random access memory

Self-aligned and misalignment-tolerant landing pad for magnetoresis...

Cryogenic patterning of magnetic tunnel junctions

Through-silicon via with improved substrate contact for reduced thr...

Magnetic tunnel junction based anti-fuses with cascoded transistors

SRAM margin recovery during burn-in

Multi time programmable memories using local implantation in high-K...

Selective growth of seed layer for magneto-resistive random access...

SRAM margin recovery during burn-in

Multi time programmable memories using local implantation in high-K...

Strain monitoring of MRAM arrays

Cryogenic patterning of magnetic tunnel junctions

Patents Applicationslast 30 patents

DUAL SPACER FOR DOUBLE MAGNETIC TUNNEL JUNCTION DEVICES

ON-CHIP INTEGRATION OF A HIGH-EFFICIENCY AND A HIGH-RETENTION INVER...

WIDE-BASE MAGNETIC TUNNEL JUNCTION DEVICE WITH SIDEWALL POLYMER SPACER

MAGNETIC TUNNEL JUNCTION DEVICE WITH AIR GAP

DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

MAGNETIC RANDOM ACCESS MEMORY (MRAM) STRUCTURE WITH SMALL BOTTOM EL...

MAGNETIC TUNNEL JUNCTION BASED TRUE RANDOM NUMBER GENERATOR

MAGNETIC RANDOM ACCESS MEMORY (MRAM) STRUCTURE WITH SMALL BOTTOM EL...

OTP ELEMENTS WITH HIGH ASPECT RATIO MTJ

MJT BASED ANTI-FUSES WITH LOW PROGRAMMING VOLTAGE

MAGNETIC TUNNEL JUNCTION (MTJ) FOR MULTI-KEY ENCRYPTION

MTJ CONTAINING DEVICE CONTAINING A BOTTOM ELECTRODE EMBEDDED IN DIA...

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE IN MAGNETIC TUNNEL JUNCT...

NANOSCALE MAGNETIC TUNNEL JUNCTION ARRAYS FOR SUB-MICROMETER RESOLU...

SUB-LITHOGRAPHIC MAGNETIC TUNNEL JUNCTIONS FOR MAGNETIC RANDOM ACCE...

FABRICATING EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE W...

Diamond-Like Carbon Hardmask for MRAM

SELECTIVE GROWTH OF SEED LAYER FOR MAGNETO-RESISTIVE RANDOM ACCESS...

ANNEALED SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY

SELF-ALIGNED AND MISALIGNMENT-TOLERANT LANDING PAD FOR MAGNETORESIS...

ASSESSING AND MINIMIZING INTEGRATED CIRCUIT (IC) CHIP WARPAGE DURIN...

CRYOGENIC PATTERNING OF MAGNETIC TUNNEL JUNCTIONS

SRAM MARGIN RECOVERY DURING BURN-IN

SRAM MARGIN RECOVERY DURING BURN-IN

SRAM MARGIN RECOVERY DURING BURN-IN

STRAIN MONITORING OF MRAM ARRAYS

SELECTIVE GROWTH OF SEED LAYER FOR MAGNETO-RESISTIVE RANDOM ACCESS...

STRAIN MONITORING OF MRAM ARRAYS

MAGNETIC TUNNEL JUNCTION (MTJ) BASED TRUE RANDOM NUMBER GENERATORS...

INDUCTORS IN BEOL WITH PARTICULATE MAGNETIC CORES