Chang-Lin Hsieh

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma etching carbonaceous layers with sulfur-based etchants
- Patent number 8,133,819
- Issue date Mar 13, 2012
- Applied Materials, Inc.
- Judy Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching an organic low-k dielectric material
- Patent number 7,585,778
- Issue date Sep 8, 2009
- Applied Materials, Inc.
- Chang-Lin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BARC shaping for improved fabrication of dual damascene integrated...
- Patent number 7,071,112
- Issue date Jul 4, 2006
- Applied Materials, Inc.
- Chang-Lin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System level in-situ integrated dielectric etch process particularl...
- Patent number 6,949,203
- Issue date Sep 27, 2005
- Applied Materials, Inc.
- Chang-Lin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for selectively etching dielectric layers
- Patent number 6,905,968
- Issue date Jun 14, 2005
- Applied Materials, Inc.
- Chang-Lin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching of low-k dielectrics
- Patent number 6,897,154
- Issue date May 24, 2005
- Terry Leung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch process for dielectric materials comprising oxidized organo si...
- Patent number 6,762,127
- Issue date Jul 13, 2004
- Yves Pierre Boiteux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching carbon-containing silicon oxide films
- Patent number 6,607,675
- Issue date Aug 19, 2003
- Applied Materials Inc.
- Chang Lin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monitoring substrate processing with optical emission and polarized...
- Patent number 6,559,942
- Issue date May 6, 2003
- Applied Materials Inc.
- Zhifeng Sui
- G01 - MEASURING TESTING
Information Patent Grant
Method of heating a semiconductor substrate
- Patent number 6,547,978
- Issue date Apr 15, 2003
- Applied Materials Inc.
- Yan Ye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
NH3 plasma descumming and resist stripping in semiconductor applica...
- Patent number 6,455,431
- Issue date Sep 24, 2002
- Applied Materials Inc.
- Chang Lin Hsieh
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Post-etch treatment of plasma-etched feature surfaces to prevent co...
- Patent number 6,153,530
- Issue date Nov 28, 2000
- Applied Materials, Inc.
- Yan Ye
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IN-SITU CLEAN TO REDUCE METAL RESIDUES AFTER ETCHING TITANIUM NITRIDE
- Publication number 20110130007
- Publication date Jun 2, 2011
- Applied Materials, Inc.
- CHI-HONG CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMBER PLASMA-CLEANING PROCESS SCHEME
- Publication number 20100024840
- Publication date Feb 4, 2010
- CHANG-LIN HSIEH
- B08 - CLEANING
Information Patent Application
PLASMA ETCHING CARBONACEOUS LAYERS WITH SULFUR-BASED ETCHANTS
- Publication number 20090212010
- Publication date Aug 27, 2009
- Judy Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING LOW K DIELECTRIC DUAL DAMASCENE STRUCTURES
- Publication number 20090156012
- Publication date Jun 18, 2009
- Applied Materials, Inc.
- CHANG-LIN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ETCHING AN ORGANIC LOW-K DIELECTRIC MATERIAL
- Publication number 20080237183
- Publication date Oct 2, 2008
- CHANG-LIN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ETCH TOOL CONFIGURED FOR HIGH DENSITY AND LOW BOMBARDMEN...
- Publication number 20080023144
- Publication date Jan 31, 2008
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric etch method with high source and low bombardment plasma...
- Publication number 20060118519
- Publication date Jun 8, 2006
- Applied Materials Inc.
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barc shaping for improved fabrication of dual damascene integrated...
- Publication number 20040077175
- Publication date Apr 22, 2004
- APPLIED MATERIALS, INC.
- Chang-Lin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective etching of low-k dielectrics
- Publication number 20030235993
- Publication date Dec 25, 2003
- APPLIED MATERIALS, INC.
- Terry Leung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System level in-situ integrated dielectric etch process particularl...
- Publication number 20030164354
- Publication date Sep 4, 2003
- Applied Materials, Inc.
- Chang-Lin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for selectively etching dielectric layers
- Publication number 20030109143
- Publication date Jun 12, 2003
- APPLIED MATERIALS, INC.
- Chang-Lin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch process for dielectric materials comprising oxidized organo si...
- Publication number 20030073321
- Publication date Apr 17, 2003
- Applied Material, Inc.
- Yves Pierre Boiteux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monitoring substrate processing with optical emission and polarized...
- Publication number 20020048019
- Publication date Apr 25, 2002
- Zhifeng Sui
- G01 - MEASURING TESTING
Information Patent Application
Method of heating a semiconductor substrate
- Publication number 20020045354
- Publication date Apr 18, 2002
- Yan Ye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Chang-Lin Hsieh

Person

Patents Grantslast 30 patents

Plasma etching carbonaceous layers with sulfur-based etchants

Method of etching an organic low-k dielectric material

BARC shaping for improved fabrication of dual damascene integrated...

System level in-situ integrated dielectric etch process particularl...

Process for selectively etching dielectric layers

Selective etching of low-k dielectrics

Etch process for dielectric materials comprising oxidized organo si...

Method of etching carbon-containing silicon oxide films

Monitoring substrate processing with optical emission and polarized...

Method of heating a semiconductor substrate

NH3 plasma descumming and resist stripping in semiconductor applica...

Post-etch treatment of plasma-etched feature surfaces to prevent co...

Patents Applicationslast 30 patents

IN-SITU CLEAN TO REDUCE METAL RESIDUES AFTER ETCHING TITANIUM NITRIDE

CHAMBER PLASMA-CLEANING PROCESS SCHEME

PLASMA ETCHING CARBONACEOUS LAYERS WITH SULFUR-BASED ETCHANTS

METHOD FOR FABRICATING LOW K DIELECTRIC DUAL DAMASCENE STRUCTURES

METHOD OF ETCHING AN ORGANIC LOW-K DIELECTRIC MATERIAL

DIELECTRIC ETCH TOOL CONFIGURED FOR HIGH DENSITY AND LOW BOMBARDMEN...

Dielectric etch method with high source and low bombardment plasma...

Barc shaping for improved fabrication of dual damascene integrated...

Selective etching of low-k dielectrics

System level in-situ integrated dielectric etch process particularl...

Process for selectively etching dielectric layers

Etch process for dielectric materials comprising oxidized organo si...

Monitoring substrate processing with optical emission and polarized...

Method of heating a semiconductor substrate