Chang Soo Suh

Person

Santa Barbara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 12,046,666
- Issue date Jul 23, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-on gallium nitride based transistor with p-type gate
- Patent number 11,978,790
- Issue date May 7, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Monolithic integration of high and low-side GaN FETs with screening...
- Patent number 11,888,027
- Issue date Jan 30, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for testing a high voltage transistor with a field plate
- Patent number 11,302,785
- Issue date Apr 12, 2022
- Texas Instruments Incorporated
- Ramana Tadepalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 11,177,378
- Issue date Nov 16, 2021
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 11,049,960
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group IIIA-N HEMT with a tunnel diode in the gate stack
- Patent number 10,707,324
- Issue date Jul 7, 2020
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 10,680,093
- Issue date Jun 9, 2020
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group IIIA-N HEMT with a tunnel diode in the gate stack
- Patent number 10,381,456
- Issue date Aug 13, 2019
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 9,882,041
- Issue date Jan 30, 2018
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride power devices
- Patent number 9,343,560
- Issue date May 17, 2016
- Transphorm Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride power devices
- Patent number 8,633,518
- Issue date Jan 21, 2014
- Transphorm Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode gallium nitride power devices
- Patent number 8,344,424
- Issue date Jan 1, 2013
- Transphorm Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode gallium nitride power devices
- Patent number 8,193,562
- Issue date Jun 5, 2012
- Tansphorm Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-polar aluminum gallium nitride/gallium nitride enhancement-mode f...
- Patent number 7,948,011
- Issue date May 24, 2011
- The Regents of the University of California
- Siddharth Rajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride devices with recessed gates
- Patent number 7,939,391
- Issue date May 10, 2011
- Transphorm Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode gallium nitride power devices
- Patent number 7,915,643
- Issue date Mar 29, 2011
- Transphorm Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate e-mode transistors
- Patent number 7,851,825
- Issue date Dec 14, 2010
- Transphorm Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices with recessed gates
- Patent number 7,795,642
- Issue date Sep 14, 2010
- Transphorm, Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor
- Patent number 7,728,356
- Issue date Jun 1, 2010
- The Regents of the University of California
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20240274705
- Publication date Aug 15, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20240120383
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...
- Publication number 20240047529
- Publication date Feb 8, 2024
- TEXAS INSTRUMENTS INCORPORATED
- DONG SEUP LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20230197784
- Publication date Jun 22, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD TO CONTROL THRESHOLD VOLTAGE AND GATE LEAKAGE...
- Publication number 20230134698
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM-NITRIDE DEVICE FIELD-PLATE SYSTEM
- Publication number 20230101543
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE DEPLETION-MODE CURRENT SOURCE, TRANSISTOR, AND FABRICA...
- Publication number 20220399328
- Publication date Dec 15, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Maik Peter Kaufmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR WITH A FIELD PLATE
- Publication number 20220216309
- Publication date Jul 7, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Ramana Tadepalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20220173234
- Publication date Jun 2, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
ELECTRONIC DEVICE WITH ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR,...
- Publication number 20220130988
- Publication date Apr 28, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
- Publication number 20210280702
- Publication date Sep 9, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TESTING A HIGH VOLTAGE TRANSISTOR WITH A FIELD PLATE
- Publication number 20200403071
- Publication date Dec 24, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Ramana Tadepalli
- G01 - MEASURING TESTING
Information Patent Application
HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE
- Publication number 20200303535
- Publication date Sep 24, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo JOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
- Publication number 20200287033
- Publication date Sep 10, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK
- Publication number 20190319111
- Publication date Oct 17, 2019
- TEXAS INSTRUMENTS INCORPORATED
- CHANG SOO SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK
- Publication number 20180323297
- Publication date Nov 8, 2018
- TEXAS INSTRUMENTS INCORPORATED
- CHANG SOO SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE
- Publication number 20180151713
- Publication date May 31, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo JOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER DEVICES
- Publication number 20160254363
- Publication date Sep 1, 2016
- TRANSPHORM INC.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER DEVICES
- Publication number 20140103399
- Publication date Apr 17, 2014
- TRANSPHORM INC.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE TRANSISTOR WITH CHARGE-INDUCING LAYER
- Publication number 20130313561
- Publication date Nov 28, 2013
- TriQuint Semiconductor, Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER DEVICES
- Publication number 20130175580
- Publication date Jul 11, 2013
- Transphorm Inc.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE GALLIUM NITRIDE POWER DEVICES
- Publication number 20120175680
- Publication date Jul 12, 2012
- TRANSPHORM INC.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE GALLIUM NITRIDE POWER DEVICES
- Publication number 20110121314
- Publication date May 26, 2011
- TRANSPHORM INC.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-polar aluminum gallium nitride/gallium nitride enhancement-mode f...
- Publication number 20100264461
- Publication date Oct 21, 2010
- Siddharth Rajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES WITH RECESSED GATES
- Publication number 20100255646
- Publication date Oct 7, 2010
- TRANSPHORM INC.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE E-MODE TRANSISTORS
- Publication number 20090146185
- Publication date Jun 11, 2009
- TRANSPHORM INC.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LA...
- Publication number 20090085065
- Publication date Apr 2, 2009
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DIODES AND INTEGRATED COMPONENTS
- Publication number 20090072269
- Publication date Mar 19, 2009
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE GALLIUM NITRIDE POWER DEVICES
- Publication number 20090072272
- Publication date Mar 19, 2009
- TRANSPHORM INC.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Devices with Recessed Gates
- Publication number 20090072240
- Publication date Mar 19, 2009
- TRANSPHORM INC.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS

Chang Soo Suh

Person

Patents Grantslast 30 patents

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

Normally-on gallium nitride based transistor with p-type gate

Monolithic integration of high and low-side GaN FETs with screening...

Method for testing a high voltage transistor with a field plate

HEMT having conduction barrier between drain fingertip and source

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

Group IIIA-N HEMT with a tunnel diode in the gate stack

HEMT having conduction barrier between drain fingertip and source

Group IIIA-N HEMT with a tunnel diode in the gate stack

HEMT having conduction barrier between drain fingertip and source

Gallium nitride power devices

Gallium nitride power devices

Enhancement mode gallium nitride power devices

Enhancement mode gallium nitride power devices

N-polar aluminum gallium nitride/gallium nitride enhancement-mode f...

III-Nitride devices with recessed gates

Enhancement mode gallium nitride power devices

Insulated gate e-mode transistors

III-nitride devices with recessed gates

P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor

Patents Applicationslast 30 patents

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

APPARATUS AND METHOD TO CONTROL THRESHOLD VOLTAGE AND GATE LEAKAGE...

GALLIUM-NITRIDE DEVICE FIELD-PLATE SYSTEM

HIGH-VOLTAGE DEPLETION-MODE CURRENT SOURCE, TRANSISTOR, AND FABRICA...

HIGH VOLTAGE TRANSISTOR WITH A FIELD PLATE

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

ELECTRONIC DEVICE WITH ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR,...

GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

METHOD FOR TESTING A HIGH VOLTAGE TRANSISTOR WITH A FIELD PLATE

HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE

GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK

GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK

HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE

GALLIUM NITRIDE POWER DEVICES

GALLIUM NITRIDE POWER DEVICES

GROUP III-NITRIDE TRANSISTOR WITH CHARGE-INDUCING LAYER

GALLIUM NITRIDE POWER DEVICES

ENHANCEMENT MODE GALLIUM NITRIDE POWER DEVICES

ENHANCEMENT MODE GALLIUM NITRIDE POWER DEVICES

N-polar aluminum gallium nitride/gallium nitride enhancement-mode f...

III-NITRIDE DEVICES WITH RECESSED GATES

INSULATED GATE E-MODE TRANSISTORS

METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LA...

GALLIUM NITRIDE DIODES AND INTEGRATED COMPONENTS

ENHANCEMENT MODE GALLIUM NITRIDE POWER DEVICES

III-Nitride Devices with Recessed Gates