Changhua Chen

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Formation of Ohmic contacts in III-nitride light emitting devices
- Patent number 7,345,323
- Issue date Mar 18, 2008
- Philips Lumileds Lighting Company LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of Ohmic contacts in III-nitride light emitting devices
- Patent number 6,914,272
- Issue date Jul 5, 2005
- LumiLeds Lighting U.S., LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode
- Patent number 6,888,171
- Issue date May 3, 2005
- Dallan Luming Science & Technology Group Co., Ltd.
- Heng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minority carrier semiconductor devices with improved reliability
- Patent number 6,794,731
- Issue date Sep 21, 2004
- LumiLeds Lighting U.S., LLC
- Stephen A. Stockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of ohmic contacts in III-nitride light emitting devices
- Patent number 6,657,300
- Issue date Dec 2, 2003
- LumiLeds Lighting U.S., LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire
- Patent number 6,630,695
- Issue date Oct 7, 2003
- Changhua Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial material grown laterally within a trench and method for p...
- Patent number 6,500,257
- Issue date Dec 31, 2002
- Agilent Technologies, Inc.
- Shih-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire
- Patent number 6,495,867
- Issue date Dec 17, 2002
- AXT, Inc.
- Changhua Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of strain engineering and impurity control in III-V nitride...
- Patent number 6,274,399
- Issue date Aug 14, 2001
- LumiLeds Lighting, U.S. LLC
- R. Scott Kern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain engineered and impurity controlled III-V nitride semiconduct...
- Patent number 6,194,742
- Issue date Feb 27, 2001
- LumiLeds Lighting, U.S., LLC
- R. Scott Kern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minority carrier semiconductor devices with improved stability
- Patent number 5,909,051
- Issue date Jun 1, 1999
- Hewlett-Packard Company
- Stephen A. Stockman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Formation of Ohmic contacts in III-nitride light emitting devices
- Publication number 20050167693
- Publication date Aug 4, 2005
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Ohmic contacts in III-nitride light emitting devices
- Publication number 20040075097
- Publication date Apr 22, 2004
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InGaN/A1GaN/GaN Multilayer Buffer for Growth of GaN on Sapphire
- Publication number 20020175337
- Publication date Nov 28, 2002
- AXT, Inc.
- Changhua Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting diode
- Publication number 20020079500
- Publication date Jun 27, 2002
- Heng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of ohmic contacts in III-nitride light emitting devices
- Publication number 20020008243
- Publication date Jan 24, 2002
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINORITY CARRIER SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILTY
- Publication number 20020003237
- Publication date Jan 10, 2002
- STEPHEN A. STOCKMAN
- H01 - BASIC ELECTRIC ELEMENTS

Changhua Chen

Person

Patents Grantslast 30 patents

Formation of Ohmic contacts in III-nitride light emitting devices

Formation of Ohmic contacts in III-nitride light emitting devices

Light emitting diode

Minority carrier semiconductor devices with improved reliability

Formation of ohmic contacts in III-nitride light emitting devices

InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire

Epitaxial material grown laterally within a trench and method for p...

InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire

Method of strain engineering and impurity control in III-V nitride...

Strain engineered and impurity controlled III-V nitride semiconduct...

Minority carrier semiconductor devices with improved stability

Patents Applicationslast 30 patents

Formation of Ohmic contacts in III-nitride light emitting devices

Formation of Ohmic contacts in III-nitride light emitting devices

InGaN/A1GaN/GaN Multilayer Buffer for Growth of GaN on Sapphire

Light emitting diode

Formation of ohmic contacts in III-nitride light emitting devices

MINORITY CARRIER SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILTY