Chanho Park

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Split gate semiconductor with non-uniform trench oxide
- Patent number 11,189,702
- Issue date Nov 30, 2021
- Vishay SIliconix, LLC
- M. Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having reduced gate charges and superior figur...
- Patent number 11,114,559
- Issue date Sep 7, 2021
- Vishay SIliconix, LLC
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple gate pads
- Patent number 11,004,841
- Issue date May 11, 2021
- Vishay SIliconix, LLC
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple gate pads
- Patent number 10,256,227
- Issue date Apr 9, 2019
- Vishay-Siliconix
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with non-uniform trench oxide layer
- Patent number 9,978,859
- Issue date May 22, 2018
- Vishay Siliconix
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with non-uniform trench oxide layer
- Patent number 9,673,314
- Issue date Jun 6, 2017
- Vishay Siliconix
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures of and methods of fabricating split gate MIS devices
- Patent number 9,425,305
- Issue date Aug 23, 2016
- Vishay Siliconix
- Kyle Terrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with thick trench bottom oxide
- Patent number 8,598,654
- Issue date Dec 3, 2013
- Fairchild Semiconductor Corporation
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPLIT GATE SEMICONDUCTOR WITH NON-UNIFORM TRENCH OXIDE
- Publication number 20200243656
- Publication date Jul 30, 2020
- Siliconix Incorporated
- M. Ayman SHIBIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE PADS
- Publication number 20190237458
- Publication date Aug 1, 2019
- Vishay-Siliconix
- Chanho PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE PADS
- Publication number 20170294432
- Publication date Oct 12, 2017
- VISHAY-SILICONIX
- Chanho PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER
- Publication number 20170271498
- Publication date Sep 21, 2017
- VISHAY-SILICONIX
- Chanho PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER
- Publication number 20170012118
- Publication date Jan 12, 2017
- VISHAY-SILICONIX
- Chanho PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING REDUCED GATE CHARGES AND SUPERIOR FIGUR...
- Publication number 20120292696
- Publication date Nov 22, 2012
- VISHAY-SILICONIX
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE WITH THICK TRENCH BOTTOM OXIDE
- Publication number 20120235230
- Publication date Sep 20, 2012
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES OF AND METHODS OF FABRICATING SPLIT GATE MIS DEVICES
- Publication number 20110210406
- Publication date Sep 1, 2011
- VISHAY-SILICONIX
- Kyle Terrill
- H01 - BASIC ELECTRIC ELEMENTS

Chanho Park

Person

Patents Grantslast 30 patents

Split gate semiconductor with non-uniform trench oxide

Semiconductor device having reduced gate charges and superior figur...

Semiconductor device having multiple gate pads

Semiconductor device having multiple gate pads

Semiconductor device with non-uniform trench oxide layer

Semiconductor device with non-uniform trench oxide layer

Structures of and methods of fabricating split gate MIS devices

MOSFET device with thick trench bottom oxide

Patents Applicationslast 30 patents

SPLIT GATE SEMICONDUCTOR WITH NON-UNIFORM TRENCH OXIDE

SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE PADS

SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE PADS

SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER

SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER

SEMICONDUCTOR DEVICE HAVING REDUCED GATE CHARGES AND SUPERIOR FIGUR...

MOSFET DEVICE WITH THICK TRENCH BOTTOM OXIDE

STRUCTURES OF AND METHODS OF FABRICATING SPLIT GATE MIS DEVICES