CHARLES C. KUO

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
ESD protection decoupled from diffusion
- Patent number 12,328,946
- Issue date Jun 10, 2025
- Intel Corporation
- Urusa Alaan
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic memory stack
- Patent number 12,058,847
- Issue date Aug 6, 2024
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory cell with self-aligned thin film transistor
- Patent number 11,812,600
- Issue date Nov 7, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory array with memory cells having a 3D selector and a storag...
- Patent number 11,631,717
- Issue date Apr 18, 2023
- Intel Corporation
- Charles Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Epitaxial layers on contact electrodes for thin- film transistors
- Patent number 11,522,060
- Issue date Dec 6, 2022
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital-to-analog converters having multiple-gate transistor-like s...
- Patent number 11,469,766
- Issue date Oct 11, 2022
- Intel Corporation
- Abhishek A. Sharma
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,462,678
- Issue date Oct 4, 2022
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque magnetic mechanism
- Patent number 11,437,567
- Issue date Sep 6, 2022
- Intel Corporation
- Justin Brockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...
- Patent number 11,430,943
- Issue date Aug 30, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level magnetic tunnel junction (MTJ) devices including mobile...
- Patent number 11,386,951
- Issue date Jul 12, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit torque (SOT) memory device with self-aligned contacts an...
- Patent number 11,348,970
- Issue date May 31, 2022
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular STTM multi-layer insert free layer
- Patent number 11,295,884
- Issue date Apr 5, 2022
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned embedded phase change memory cell having a fin shaped...
- Patent number 11,264,428
- Issue date Mar 1, 2022
- Intel Corporation
- Charles C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque (SOT) memory devices with enhanced tunnel magneto...
- Patent number 11,257,613
- Issue date Feb 22, 2022
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned spin orbit torque (SOT) memory devices and their metho...
- Patent number 11,227,644
- Issue date Jan 18, 2022
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High stability free layer for perpendicular spin torque transfer me...
- Patent number 11,031,545
- Issue date Jun 8, 2021
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque memory devices having heusler magnetic tunnel...
- Patent number 10,964,886
- Issue date Mar 30, 2021
- Intel Corporation
- Brian Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular STTM free layer including protective cap
- Patent number 10,950,660
- Issue date Mar 16, 2021
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low stray field magnetic memory
- Patent number 10,832,847
- Issue date Nov 10, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic memory with symmetric fixed layers
- Patent number 10,832,749
- Issue date Nov 10, 2020
- Intel Corporation
- Charles C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming spin-transfer torque memory having a dot-con...
- Patent number 10,707,409
- Issue date Jul 7, 2020
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque memory (STTM) devices having magnetic contacts
- Patent number 10,580,973
- Issue date Mar 3, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque memory (STTM), methods of forming the same usi...
- Patent number 10,580,975
- Issue date Mar 3, 2020
- Intel Corporation
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with enhanced tunneling magnetoresistance ratio, memor...
- Patent number 10,541,014
- Issue date Jan 21, 2020
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual resistive-material regions for phase change memory devices
- Patent number 10,522,757
- Issue date Dec 31, 2019
- Micron Technology, Inc.
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual resistance heater for phase change memory devices
- Patent number 10,522,756
- Issue date Dec 31, 2019
- Micron Technology, Inc.
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic memory with reduced switching current
- Patent number 10,522,739
- Issue date Dec 31, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unipolar current switching in perpendicular magnetic tunnel junctio...
- Patent number 10,504,962
- Issue date Dec 10, 2019
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for forming non-planar resistive memory cells
- Patent number 10,439,134
- Issue date Oct 8, 2019
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...
- Publication number 20250133822
- Publication date Apr 24, 2025
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE
- Publication number 20240006499
- Publication date Jan 4, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS
- Publication number 20230197728
- Publication date Jun 22, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY COMPRISING CONDUCTIVE FERROELECTRIC MATERIAL IN SERIES WITH...
- Publication number 20230147275
- Publication date May 11, 2023
- Intel Corporation
- Charles Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIODES IN STACKED TRANSISTOR TECHNOLOGIES
- Publication number 20230087444
- Publication date Mar 23, 2023
- Intel Corporation
- Nicholas A. Thomson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DIODES IN STACKED TRANSISTOR TECHNOLOGIES
- Publication number 20230089395
- Publication date Mar 23, 2023
- Intel Corporation
- Benjamin Orr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIODES IN STACKED TRANSISTOR TECHNOLOGIES
- Publication number 20230088578
- Publication date Mar 23, 2023
- Intel Corporation
- Nicholas A. Thomson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE
- Publication number 20220199839
- Publication date Jun 23, 2022
- Intel Corporation
- Arnab SEN GUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET
- Publication number 20220199801
- Publication date Jun 23, 2022
- Intel Corporation
- Prashant MAJHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION
- Publication number 20220199609
- Publication date Jun 23, 2022
- Intel Corporation
- Urusa ALAAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...
- Publication number 20220199620
- Publication date Jun 23, 2022
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC MEMORY STACK
- Publication number 20210375873
- Publication date Dec 2, 2021
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR STTM MULTI-LAYER INSERT FREE LAYER
- Publication number 20210296040
- Publication date Sep 23, 2021
- Intel Corporation
- KAAN OGUZ
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...
- Publication number 20210013397
- Publication date Jan 14, 2021
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY CELL WITH SELF-ALIGNED THIN FILM TRANSISTOR
- Publication number 20200411528
- Publication date Dec 31, 2020
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED PHASE CHANGE MEMORY CELL
- Publication number 20200161370
- Publication date May 21, 2020
- Intel Corporation
- Charles C. KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY ARRAY WITH MEMORY CELLS HAVING A 3D SELECTOR AND A STORAG...
- Publication number 20200105835
- Publication date Apr 2, 2020
- Intel Corporation
- Charles KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL LAYERS ON CONTACT ELECTRODES FOR THIN-FILM TRANSISTORS
- Publication number 20200098875
- Publication date Mar 26, 2020
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW STRAY FIELD MAGNETIC MEMORY
- Publication number 20200051724
- Publication date Feb 13, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS
- Publication number 20200043536
- Publication date Feb 6, 2020
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES
- Publication number 20200005861
- Publication date Jan 2, 2020
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH A SYNTHETIC ANTIFERROMA...
- Publication number 20200006628
- Publication date Jan 2, 2020
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Application
DIGITAL-TO-ANALOG CONVERTERS HAVING MULTIPLE-GATE TRANSISTOR-LIKE S...
- Publication number 20200007135
- Publication date Jan 2, 2020
- Intel Corporation
- ABHISHEK A. SHARMA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
HIGH DENSITY NEGATIVE DIFFERENTIAL RESISTANCE BASED MEMORY
- Publication number 20190385657
- Publication date Dec 19, 2019
- Intel Corporation
- Charles Augustine
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ORBIT TORQUE (SOT) MEMORY DEVICE WITH SELF-ALIGNED CONTACTS AN...
- Publication number 20190326353
- Publication date Oct 24, 2019
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELF-ALIGNED SPIN ORBIT TORQUE (SOT) MEMORY DEVICES AND THEIR METHO...
- Publication number 20190304523
- Publication date Oct 3, 2019
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED STABILITY AND...
- Publication number 20190304524
- Publication date Oct 3, 2019
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED TUNNEL MAGNETO...
- Publication number 20190304653
- Publication date Oct 3, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM
- Publication number 20190280188
- Publication date Sep 12, 2019
- Intel Corporation
- Justin BROCKMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH STABILITY FREE LAYER FOR PERPENDICULAR SPIN TORQUE TRANSFER ME...
- Publication number 20190221734
- Publication date Jul 18, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS

CHARLES C. KUO

Person

Patents Grantslast 30 patents

ESD protection decoupled from diffusion

Ribbon or wire transistor stack with selective dipole threshold vol...

Monolithic memory stack

Vertical memory cell with self-aligned thin film transistor

3D memory array with memory cells having a 3D selector and a storag...

Epitaxial layers on contact electrodes for thin- film transistors

Digital-to-analog converters having multiple-gate transistor-like s...

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Perpendicular spin transfer torque magnetic mechanism

Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...

Multi-level magnetic tunnel junction (MTJ) devices including mobile...

Spin orbit torque (SOT) memory device with self-aligned contacts an...

Perpendicular STTM multi-layer insert free layer

Self-aligned embedded phase change memory cell having a fin shaped...

Spin orbit torque (SOT) memory devices with enhanced tunnel magneto...

Self-aligned spin orbit torque (SOT) memory devices and their metho...

High stability free layer for perpendicular spin torque transfer me...

Spin transfer torque memory devices having heusler magnetic tunnel...

Perpendicular STTM free layer including protective cap

Low stray field magnetic memory

Perpendicular magnetic memory with symmetric fixed layers

Techniques for forming spin-transfer torque memory having a dot-con...

Spin-transfer torque memory (STTM) devices having magnetic contacts

Spin transfer torque memory (STTM), methods of forming the same usi...

Memory cells with enhanced tunneling magnetoresistance ratio, memor...

Dual resistive-material regions for phase change memory devices

Dual resistance heater for phase change memory devices

Perpendicular magnetic memory with reduced switching current

Unipolar current switching in perpendicular magnetic tunnel junctio...

Techniques for forming non-planar resistive memory cells

Patents Applicationslast 30 patents

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE

STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS

MEMORY COMPRISING CONDUCTIVE FERROELECTRIC MATERIAL IN SERIES WITH...

LATERAL DIODES IN STACKED TRANSISTOR TECHNOLOGIES

VERTICAL DIODES IN STACKED TRANSISTOR TECHNOLOGIES

LATERAL DIODES IN STACKED TRANSISTOR TECHNOLOGIES

COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE

NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET

NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

MONOLITHIC MEMORY STACK

PERPENDICULAR STTM MULTI-LAYER INSERT FREE LAYER

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...

VERTICAL MEMORY CELL WITH SELF-ALIGNED THIN FILM TRANSISTOR

SELF-ALIGNED EMBEDDED PHASE CHANGE MEMORY CELL

3D MEMORY ARRAY WITH MEMORY CELLS HAVING A 3D SELECTOR AND A STORAG...

EPITAXIAL LAYERS ON CONTACT ELECTRODES FOR THIN-FILM TRANSISTORS

LOW STRAY FIELD MAGNETIC MEMORY

PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS

MULTI-LEVEL MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH A SYNTHETIC ANTIFERROMA...

DIGITAL-TO-ANALOG CONVERTERS HAVING MULTIPLE-GATE TRANSISTOR-LIKE S...

HIGH DENSITY NEGATIVE DIFFERENTIAL RESISTANCE BASED MEMORY

SPIN ORBIT TORQUE (SOT) MEMORY DEVICE WITH SELF-ALIGNED CONTACTS AN...

SELF-ALIGNED SPIN ORBIT TORQUE (SOT) MEMORY DEVICES AND THEIR METHO...

SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED STABILITY AND...

SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED TUNNEL MAGNETO...

PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM

HIGH STABILITY FREE LAYER FOR PERPENDICULAR SPIN TORQUE TRANSFER ME...