Charles E. Weitzel

Person

Mesa, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
pHEMT with barrier optimized for low temperature operation
- Patent number 7,253,455
- Issue date Aug 7, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed semiconductor device
- Patent number 7,229,903
- Issue date Jun 12, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Hsin-Hua P. Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor component that includes sel...
- Patent number 6,939,781
- Issue date Sep 6, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Randy D. Redd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced RF enhancement-mode FETs with improved gate properties
- Patent number 6,893,947
- Issue date May 17, 2005
- Freescale Semiconductor, Inc.
- Marino J. Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a microwave field effect transistor with high op...
- Patent number 6,867,078
- Issue date Mar 15, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-D smart power IC
- Patent number 6,255,710
- Issue date Jul 3, 2001
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide transistor and method therefor
- Patent number 6,180,495
- Issue date Jan 30, 2001
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gate, vertical drift region transistor
- Patent number 6,146,926
- Issue date Nov 14, 2000
- Motorola, Inc.
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of electron beam lithography on very high resistivity substr...
- Patent number 6,127,272
- Issue date Oct 3, 2000
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage resurf HFET
- Patent number 6,100,549
- Issue date Aug 8, 2000
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide transistor and method
- Patent number 6,002,148
- Issue date Dec 14, 1999
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating vertical FET with Schottky diode
- Patent number 5,956,578
- Issue date Sep 21, 1999
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device with a thinned substrate
- Patent number 5,933,750
- Issue date Aug 3, 1999
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gate vertical drift region transistor
- Patent number 5,917,203
- Issue date Jun 29, 1999
- Motorola, Inc.
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor with reduced electric fields
- Patent number 5,917,204
- Issue date Jun 29, 1999
- Motorola, Inc.
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices and the devices
- Patent number 5,895,260
- Issue date Apr 20, 1999
- Motorola, Inc.
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide transistor and method
- Patent number 5,885,860
- Issue date Mar 23, 1999
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gate, vertical drift region transistor
- Patent number 5,877,047
- Issue date Mar 2, 1999
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary heterojunction amplifier
- Patent number 5,852,316
- Issue date Dec 22, 1998
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for planarizing wide bandgap semiconductor devices
- Patent number 5,796,122
- Issue date Aug 18, 1998
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gate, vertical drift region transistor
- Patent number 5,780,878
- Issue date Jul 14, 1998
- Motorola, Inc.
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET with modified field plates and damage areas
- Patent number 5,710,455
- Issue date Jan 20, 1998
- Motorola
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MESFET having a termination layer in the channel layer
- Patent number 5,693,969
- Issue date Dec 2, 1997
- Motorola
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making wide bandgap semiconductor devices
- Patent number 5,677,230
- Issue date Oct 14, 1997
- Motorola
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET
- Patent number 5,661,312
- Issue date Aug 26, 1997
- Motorola
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon carbide JFET
- Patent number 5,641,695
- Issue date Jun 24, 1997
- Motorola
- Karen E. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide LOCOS vertical MOSFET device
- Patent number 5,635,732
- Issue date Jun 3, 1997
- Motorola
- Kenneth L. Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral silicon carbide transistor
- Patent number 5,627,385
- Issue date May 6, 1997
- Motorola, Inc.
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices and the devices
- Patent number 5,612,232
- Issue date Mar 18, 1997
- Motorola
- Christine Thero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage silicon carbide transistor
- Patent number 5,569,937
- Issue date Oct 29, 1996
- Motorola
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
pHEMT with barrier optimized for low temperature operation
- Publication number 20060220062
- Publication date Oct 5, 2006
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed semiconductor device
- Publication number 20060043416
- Publication date Mar 2, 2006
- Hsin-Hua P. Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InGaP pHEMT device for power amplifier operation over wide temperat...
- Publication number 20050104087
- Publication date May 19, 2005
- Ellen Y. Lan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor component and method of manufacturing same
- Publication number 20040262629
- Publication date Dec 30, 2004
- MOTOROLA, INC.
- Randy D. Redd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Advanced RF enhancement-mode FETs with improved gate properties
- Publication number 20030235974
- Publication date Dec 25, 2003
- MOTOROLA INC.
- Marino J. Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-D smart power IC
- Publication number 20020024090
- Publication date Feb 28, 2002
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS

Charles E. Weitzel

Person

Patents Grantslast 30 patents

pHEMT with barrier optimized for low temperature operation

Recessed semiconductor device

Method of manufacturing a semiconductor component that includes sel...

Advanced RF enhancement-mode FETs with improved gate properties

Method for forming a microwave field effect transistor with high op...

3-D smart power IC

Silicon carbide transistor and method therefor

Lateral gate, vertical drift region transistor

Method of electron beam lithography on very high resistivity substr...

High breakdown voltage resurf HFET

Silicon carbide transistor and method

Method of fabricating vertical FET with Schottky diode

Method of fabricating a semiconductor device with a thinned substrate

Lateral gate vertical drift region transistor

Insulated gate bipolar transistor with reduced electric fields

Method of fabricating semiconductor devices and the devices

Silicon carbide transistor and method

Lateral gate, vertical drift region transistor

Complementary heterojunction amplifier

Method for planarizing wide bandgap semiconductor devices

Lateral gate, vertical drift region transistor

Lateral MOSFET with modified field plates and damage areas

MESFET having a termination layer in the channel layer

Method of making wide bandgap semiconductor devices

Silicon carbide MOSFET

Method of forming a silicon carbide JFET

Silicon carbide LOCOS vertical MOSFET device

Lateral silicon carbide transistor

Method of fabricating semiconductor devices and the devices

High breakdown voltage silicon carbide transistor

Patents Applicationslast 30 patents

pHEMT with barrier optimized for low temperature operation

Recessed semiconductor device

InGaP pHEMT device for power amplifier operation over wide temperat...

Semiconductor component and method of manufacturing same

Advanced RF enhancement-mode FETs with improved gate properties

3-D smart power IC