Number | Name | Date | Kind |
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4263340 | Nuzillat et al. | Apr 1981 | |
5399883 | Baliga | Mar 1995 |
Number | Date | Country |
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3-171737 | Jul 1991 | JPX |
Entry |
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Shimamoto et al., "Improvement of breakdown voltage characteristics of GaAs junction by damage-creation of ion-implantation", Inst. Phys. Conf. Ser. No. 120, Chapter 4, Paper presented at Int. Symp. GaAs and Related Compounds, Seattle, 1991,1992 IOP Publishing Ltd., pp. 199-202. |