Charles R. Eddy JR.

Person

Columbia, MD, US

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN fil...
- Patent number 11,443,942
- Issue date Sep 13, 2022
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth of cubic and hexagonal InN films and their alloys...
- Patent number 10,937,649
- Issue date Mar 2, 2021
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of crystalline materials on two-dimensional inert materials
- Patent number 10,494,738
- Issue date Dec 3, 2019
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of crystalline materials on two-dimensional inert materials
- Patent number 10,266,963
- Issue date Apr 23, 2019
- The United States of America, as represented by the Secretary of the Navy
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reduction of basal plane dislocations in epitaxial SiC using an in-...
- Patent number 10,256,094
- Issue date Apr 9, 2019
- The Government of the United States of America, as represented by the Secreta...
- Rachael L. Myers-Ward
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reduction of basal plane dislocations in epitaxial SiC using an in-...
- Patent number 10,256,090
- Issue date Apr 9, 2019
- The United States of America, as represented by the Secretary of the Navy
- Rachael L. Myers-Ward
- C30 - CRYSTAL GROWTH
Information Patent Grant
Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and...
- Patent number 9,773,666
- Issue date Sep 26, 2017
- The United States of America, as represented by the Secretary of the Navy
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for vertical and lateral control of III-N polarity
- Patent number 9,679,766
- Issue date Jun 13, 2017
- The United States of America, as represented by the Secretary of the Navy
- Jennifer K. Hite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of basal plane dislocations in epitaxial SiC
- Patent number 9,464,366
- Issue date Oct 11, 2016
- The United States of America, as represented by the Secretary of the Navy
- Rachael L Myers-Ward
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for vertical and lateral control of III-N polarity
- Patent number 9,396,941
- Issue date Jul 19, 2016
- The United States of America, as represented by the Secretary of the Navy
- Jennifer K. Hite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond and diamond composite material
- Patent number 9,117,736
- Issue date Aug 25, 2015
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Complementary field effect transistors using gallium polar and nitr...
- Patent number 9,111,786
- Issue date Aug 18, 2015
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary field effect transistors using gallium polar and nitr...
- Patent number 9,105,499
- Issue date Aug 11, 2015
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond and diamond composite material
- Patent number 9,099,375
- Issue date Aug 4, 2015
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial graphene surface preparation for atomic layer deposition...
- Patent number 9,028,919
- Issue date May 12, 2015
- The United States of America, as represented by the Secretary of the Navy
- Nelson Garces
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Complementary field effect transistors using gallium polar and nitr...
- Patent number 9,018,056
- Issue date Apr 28, 2015
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing GaN whiskers from a gallium-containing solvent at...
- Patent number 8,999,060
- Issue date Apr 7, 2015
- The United States of America, as represented by the Secretary of the Navy
- Boris N. Feigelson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation of epitaxial graphene surfaces for atomic layer deposit...
- Patent number 8,920,877
- Issue date Dec 30, 2014
- The United States of America, as represented by the Secretary of the Navy
- Nelson Garces
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transistor with enhanced channel charge inducing material layer and...
- Patent number 8,900,939
- Issue date Dec 2, 2014
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN whiskers and methods of growing them from solution
- Patent number 8,679,248
- Issue date Mar 25, 2014
- The United States of America, as represented by the Secretary of the Navy
- Boris N. Feigelson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing epitaxial layers with low basal plane dislocati...
- Patent number 8,652,255
- Issue date Feb 18, 2014
- The United States of America, as represented by the Secretary of the Navy
- Robert E Stahlbush
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transistor with enhanced channel charge inducing material layer and...
- Patent number 8,648,390
- Issue date Feb 11, 2014
- The United States of America as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tracking carbon to silicon ratio in situ during silicon carbide growth
- Patent number 8,603,243
- Issue date Dec 10, 2013
- The United States of America, as represented by the Secretary of the Navy
- Brenda L VanMil
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation of epitaxial graphene surfaces for atomic layer deposit...
- Patent number 8,518,491
- Issue date Aug 27, 2013
- The United States of America, as represented by the Secretary of the Navy
- Nelson Garces
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transistor with enhanced channel charge inducing material layer and...
- Patent number 8,384,129
- Issue date Feb 26, 2013
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Low Temperature Plasma-Assisted Atomic Layer Epitaxy of Hexagonal I...
- Publication number 20220406591
- Publication date Dec 22, 2022
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Application
Indium Nitride Material
- Publication number 20200294792
- Publication date Sep 17, 2020
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of Crystalline Materials on Two-Dimensional Inert Materials
- Publication number 20190161887
- Publication date May 30, 2019
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Application
Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN Fil...
- Publication number 20180040472
- Publication date Feb 8, 2018
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Making a Variable Emittance Window
- Publication number 20170261376
- Publication date Sep 14, 2017
- The Government of the United States of America, as represented by the Secreta...
- Virginia D. Wheeler
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR VERTICAL AND LATERAL CONTROL OF III-N POLARITY
- Publication number 20160336171
- Publication date Nov 17, 2016
- The Government of the United States of America, as represented by the Secreta...
- Jennifer K. Hite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Dissolution Rate Device and Method
- Publication number 20160120472
- Publication date May 5, 2016
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Francis J. Kub
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Atomic Layer Deposition of Vanadium Oxide for Microbolometer and Im...
- Publication number 20150362374
- Publication date Dec 17, 2015
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Virginia D. Wheeler
- G01 - MEASURING TESTING
Information Patent Application
Variable Emittance Window
- Publication number 20150362763
- Publication date Dec 17, 2015
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Virginia D. Wheeler
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Complementary Field Effect Transistors Using Gallium Polar and Nitr...
- Publication number 20150221647
- Publication date Aug 6, 2015
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Field Effect Transistors Using Gallium Polar and Nitr...
- Publication number 20150221649
- Publication date Aug 6, 2015
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys...
- Publication number 20150140789
- Publication date May 21, 2015
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Neeraj Nepal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Graphene Surface Preparation for Atomic Layer Deposition...
- Publication number 20140308437
- Publication date Oct 16, 2014
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Nelson Garces
- B82 - NANO-TECHNOLOGY
Information Patent Application
Complementary Field Effect Transistors Using Gallium Polar and Nitr...
- Publication number 20140264380
- Publication date Sep 18, 2014
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Growth of Crystalline Materials on Two-Dimensional Inert Materials
- Publication number 20140255705
- Publication date Sep 11, 2014
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...
- Publication number 20140190399
- Publication date Jul 10, 2014
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Rachael L. Myers-Ward
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...
- Publication number 20140193965
- Publication date Jul 10, 2014
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Rachael L. Myers-Ward
- C30 - CRYSTAL GROWTH
Information Patent Application
TRANSISTOR WITH ENHANCED CHANNEL CHARGE INDUCING MATERIAL LAYER AND...
- Publication number 20140141580
- Publication date May 22, 2014
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and...
- Publication number 20130334666
- Publication date Dec 19, 2013
- The Government of the United Stated of America, as represented by the Secreta...
- Neeraj Nepal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND AND DIAMOND COMPOSITE MATERIAL
- Publication number 20130306989
- Publication date Nov 21, 2013
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Francis J. Kub
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DIAMOND AND DIAMOND COMPOSITE MATERIAL
- Publication number 20130306988
- Publication date Nov 21, 2013
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Francis J. Kub
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Preparation of Epitaxial Graphene Surfaces for Atomic Layer Deposit...
- Publication number 20130302997
- Publication date Nov 14, 2013
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Nelson Garces
- B82 - NANO-TECHNOLOGY
Information Patent Application
GaN Whiskers and Methods of Growing Them from Solution
- Publication number 20130186326
- Publication date Jul 25, 2013
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Boris N. Feigelson
- C30 - CRYSTAL GROWTH
Information Patent Application
TRANSISTOR WITH ENHANCED CHANNEL CHARGE INDUCING MATERIAL LAYER AND...
- Publication number 20130161641
- Publication date Jun 27, 2013
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Preparation of Epitaxial Graphene Surfaces for Atomic Layer Deposit...
- Publication number 20130017323
- Publication date Jan 17, 2013
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Nelson Garces
- B82 - NANO-TECHNOLOGY
Information Patent Application
GaN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
- Publication number 20080265259
- Publication date Oct 30, 2008
- BAE Systems Information and Electronic Systems Integration, Inc.
- Liberty L. Gunter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE GROWTH ON SILICON OR SILICON GERMANIUM SUBSTRATES...
- Publication number 20080128745
- Publication date Jun 5, 2008
- Michael A. Mastro
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Technique for perfecting the active regions of wide bandgap semicon...
- Publication number 20070004106
- Publication date Jan 4, 2007
- Martin Peckerar
- C30 - CRYSTAL GROWTH
Information Patent Application
Gan-based permeable base transistor and method of fabrication
- Publication number 20060148156
- Publication date Jul 6, 2006
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Liberty L Gunter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for perfecting the active regions of wide bandgap semicon...
- Publication number 20050164475
- Publication date Jul 28, 2005
- Martin Peckerar
- C30 - CRYSTAL GROWTH

Charles R. Eddy JR.

Person

Patents Grantslast 30 patents

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN fil...

Epitaxial growth of cubic and hexagonal InN films and their alloys...

Growth of crystalline materials on two-dimensional inert materials

Growth of crystalline materials on two-dimensional inert materials

Reduction of basal plane dislocations in epitaxial SiC using an in-...

Reduction of basal plane dislocations in epitaxial SiC using an in-...

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and...

Method for vertical and lateral control of III-N polarity

Reduction of basal plane dislocations in epitaxial SiC

Method for vertical and lateral control of III-N polarity

Diamond and diamond composite material

Complementary field effect transistors using gallium polar and nitr...

Complementary field effect transistors using gallium polar and nitr...

Diamond and diamond composite material

Epitaxial graphene surface preparation for atomic layer deposition...

Complementary field effect transistors using gallium polar and nitr...

Method of growing GaN whiskers from a gallium-containing solvent at...

Preparation of epitaxial graphene surfaces for atomic layer deposit...

Transistor with enhanced channel charge inducing material layer and...

GaN whiskers and methods of growing them from solution

Method of producing epitaxial layers with low basal plane dislocati...

Transistor with enhanced channel charge inducing material layer and...

Tracking carbon to silicon ratio in situ during silicon carbide growth

Preparation of epitaxial graphene surfaces for atomic layer deposit...

Transistor with enhanced channel charge inducing material layer and...

Patents Applicationslast 30 patents

Low Temperature Plasma-Assisted Atomic Layer Epitaxy of Hexagonal I...

Indium Nitride Material

Growth of Crystalline Materials on Two-Dimensional Inert Materials

Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN Fil...

Method of Making a Variable Emittance Window

METHOD FOR VERTICAL AND LATERAL CONTROL OF III-N POLARITY

Low Dissolution Rate Device and Method

Atomic Layer Deposition of Vanadium Oxide for Microbolometer and Im...

Variable Emittance Window

Complementary Field Effect Transistors Using Gallium Polar and Nitr...

Complementary Field Effect Transistors Using Gallium Polar and Nitr...

Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys...

Epitaxial Graphene Surface Preparation for Atomic Layer Deposition...

Complementary Field Effect Transistors Using Gallium Polar and Nitr...

Growth of Crystalline Materials on Two-Dimensional Inert Materials

REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...

REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...

TRANSISTOR WITH ENHANCED CHANNEL CHARGE INDUCING MATERIAL LAYER AND...

Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and...

DIAMOND AND DIAMOND COMPOSITE MATERIAL

DIAMOND AND DIAMOND COMPOSITE MATERIAL

Preparation of Epitaxial Graphene Surfaces for Atomic Layer Deposit...

GaN Whiskers and Methods of Growing Them from Solution

TRANSISTOR WITH ENHANCED CHANNEL CHARGE INDUCING MATERIAL LAYER AND...

Preparation of Epitaxial Graphene Surfaces for Atomic Layer Deposit...

GaN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION

GROUP III-NITRIDE GROWTH ON SILICON OR SILICON GERMANIUM SUBSTRATES...

Technique for perfecting the active regions of wide bandgap semicon...

Gan-based permeable base transistor and method of fabrication

Technique for perfecting the active regions of wide bandgap semicon...