Charles W. Pearce

Person

Allentown, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage channel diode
- Patent number 8,294,210
- Issue date Oct 23, 2012
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage power integrated circuit
- Patent number 8,288,820
- Issue date Oct 16, 2012
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a laterally diffused metal oxide semiconduc...
- Patent number 7,927,939
- Issue date Apr 19, 2011
- Agere Systems Inc.
- Charles W. Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a laterally diffused metal oxide semiconduc...
- Patent number 7,927,940
- Issue date Apr 19, 2011
- Agere Systems Inc.
- Charles W. Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a laterally diffused metal oxide semicondu...
- Patent number 7,638,380
- Issue date Dec 29, 2009
- Agere Systems Inc.
- Charles W. Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped lattice matching layer and a me...
- Patent number 6,855,991
- Issue date Feb 15, 2005
- Agere Systems Inc.
- Wen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device having a tapered oxide
- Patent number 6,762,457
- Issue date Jul 13, 2004
- Agere Systems Inc.
- Charles Walter Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped lattice matching layer and a me...
- Patent number 6,737,339
- Issue date May 18, 2004
- Agere Systems Inc.
- Wen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitors in SOI substrates
- Patent number 6,552,381
- Issue date Apr 22, 2003
- Agere Systems, INC
- Sailesh Chittipeddi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Curvilinear chemical mechanical planarization device and method
- Patent number 6,537,135
- Issue date Mar 25, 2003
- Agere Systems Inc.
- William G. Easter
- B24 - GRINDING POLISHING
Information Patent Grant
Use of selective oxidation to improve LDMOS power transistors
- Patent number 6,506,641
- Issue date Jan 14, 2003
- Agere Systems Inc.
- Charles Walter Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide etch
- Patent number 6,503,841
- Issue date Jan 7, 2003
- Agere Systems Inc.
- Robert William Criscuolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure including a tantalum pentoxide layer...
- Patent number 6,482,694
- Issue date Nov 19, 2002
- Agere Systems, INC
- Sailesh Chittipeddi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a channel stop implant in a semiconductor d...
- Patent number 6,472,279
- Issue date Oct 29, 2002
- Agere Systems Inc.
- Robert J. Griffin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming trench capacitors in SOI substrates
- Patent number 6,387,772
- Issue date May 14, 2002
- Agere Systems Guardian Corp.
- Sailesh Chittipeddi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dark spin rinse/dry
- Patent number 6,361,614
- Issue date Mar 26, 2002
- Agere Systems Guardian Corp.
- Bryan Chaeyoo Chung
- B08 - CLEANING
Information Patent Grant
Oxidation of silicon using fluorine implant
- Patent number 6,358,865
- Issue date Mar 19, 2002
- Agere Systems Guardian Corp.
- Charles Walter Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure including a tantalum pentoxide layer...
- Patent number 6,294,807
- Issue date Sep 25, 2001
- Agere Systems Guardian Corp.
- Sailesh Chittipeddi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to selectively heat semiconductor wafers
- Patent number 6,245,692
- Issue date Jun 12, 2001
- Agere Systems Guardian Corp.
- Charles Walter Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching silicon materials
- Patent number 5,930,650
- Issue date Jul 27, 1999
- Bryan Chaeyoo Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer processing using thermal nitride etch mask
- Patent number 5,711,891
- Issue date Jan 27, 1998
- Lucent Technologies Inc.
- Charles Walter Pearce
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Grant
Semiconductor wafer cleaning and rinsing techniques using re-ionize...
- Patent number 5,336,371
- Issue date Aug 9, 1994
- AT&T Bell Laboratories
- Bryan C. Chung
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Diffusion furnace
- Patent number 4,347,431
- Issue date Aug 31, 1982
- Bell Telephone Laboratories, Inc.
- Charles W. Pearce
- C30 - CRYSTAL GROWTH
Information Patent Grant
MOS Dynamic memory in a diffusion current limited semiconductor str...
- Patent number 4,216,489
- Issue date Aug 5, 1980
- Bell Telephone Laboratories, Incorporated
- James T. Clemens
- G11 - INFORMATION STORAGE
Information Patent Grant
Real-time analysis and control of melt-chemistry in crystal growing...
- Patent number 4,134,785
- Issue date Jan 16, 1979
- Western Electric Company, Inc.
- Robert J. Lavigna
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gettering semiconductor wafers with a high energy laser beam
- Patent number 4,131,487
- Issue date Dec 26, 1978
- Western Electric Company, Inc.
- Charles W. Pearce
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE CHANNEL DIODE
- Publication number 20110303976
- Publication date Dec 15, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE POWER INTEGRATED CIRCUIT
- Publication number 20100315159
- Publication date Dec 16, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A LATERALLY DIFFUSED METAL OXIDE SEMICONDUC...
- Publication number 20090325353
- Publication date Dec 31, 2009
- Agere Systems Inc.
- Charles W. Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE HAVING DUAL INTERLEVEL DIELECTRIC THICKNESS AND METHO...
- Publication number 20090267145
- Publication date Oct 29, 2009
- CICLON SEMICONDUCTOR DEVICE CORP.
- Charles Walter Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a doped lattice matching layer and a me...
- Publication number 20040183160
- Publication date Sep 23, 2004
- Agere Systems Inc.
- Wen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a doped lattice matching layer and a me...
- Publication number 20040183140
- Publication date Sep 23, 2004
- Agare Systems Inc.
- Wen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of selective oxidation to improve LDMOS power transistors
- Publication number 20030100165
- Publication date May 29, 2003
- Charles Walter Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a doped lattice matching layer and a me...
- Publication number 20030077884
- Publication date Apr 24, 2003
- Wen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITORS IN SOI SUBSTRSTES
- Publication number 20020094653
- Publication date Jul 18, 2002
- Agere Systems Guardian Crop.
- Sailesh Chittipeddi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDATION OF SILICON USING FLUORINE IMPLANTS
- Publication number 20020001972
- Publication date Jan 3, 2002
- CHARLES WALTER PEARCE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a laterally diffused metal oxide semiconduc...
- Publication number 20010051400
- Publication date Dec 13, 2001
- Charles W. Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally diffused metal oxide semiconductor device and a method of...
- Publication number 20010049172
- Publication date Dec 6, 2001
- Charles W. Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device structure including a tantalum pentoxide layer...
- Publication number 20010029068
- Publication date Oct 11, 2001
- Sailesh Chittipeddi
- H01 - BASIC ELECTRIC ELEMENTS

Charles W. Pearce

Person

Patents Grantslast 30 patents

High voltage channel diode

High voltage power integrated circuit

Method of manufacturing a laterally diffused metal oxide semiconduc...

Method of manufacturing a laterally diffused metal oxide semiconduc...

Method for manufacturing a laterally diffused metal oxide semicondu...

Semiconductor device having a doped lattice matching layer and a me...

LDMOS device having a tapered oxide

Semiconductor device having a doped lattice matching layer and a me...

Trench capacitors in SOI substrates

Curvilinear chemical mechanical planarization device and method

Use of selective oxidation to improve LDMOS power transistors

Oxide etch

Semiconductor device structure including a tantalum pentoxide layer...

Method of manufacturing a channel stop implant in a semiconductor d...

Method for forming trench capacitors in SOI substrates

Dark spin rinse/dry

Oxidation of silicon using fluorine implant

Semiconductor device structure including a tantalum pentoxide layer...

Method to selectively heat semiconductor wafers

Method of etching silicon materials

Wafer processing using thermal nitride etch mask

Semiconductor wafer cleaning and rinsing techniques using re-ionize...

Diffusion furnace

MOS Dynamic memory in a diffusion current limited semiconductor str...

Real-time analysis and control of melt-chemistry in crystal growing...

Gettering semiconductor wafers with a high energy laser beam

Patents Applicationslast 30 patents

HIGH VOLTAGE CHANNEL DIODE

HIGH VOLTAGE POWER INTEGRATED CIRCUIT

METHOD OF MANUFACTURING A LATERALLY DIFFUSED METAL OXIDE SEMICONDUC...

MOSFET DEVICE HAVING DUAL INTERLEVEL DIELECTRIC THICKNESS AND METHO...

Semiconductor device having a doped lattice matching layer and a me...

Semiconductor device having a doped lattice matching layer and a me...

Use of selective oxidation to improve LDMOS power transistors

Semiconductor device having a doped lattice matching layer and a me...

TRENCH CAPACITORS IN SOI SUBSTRSTES

OXIDATION OF SILICON USING FLUORINE IMPLANTS

Method of manufacturing a laterally diffused metal oxide semiconduc...

Laterally diffused metal oxide semiconductor device and a method of...

Semiconductor device structure including a tantalum pentoxide layer...