Charlotte Jonas

Person

Morrisville, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Double guard ring edge termination for silicon carbide devices
- Patent number 9,640,609
- Issue date May 2, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power insulated gate bipolar transistors
- Patent number 9,548,374
- Issue date Jan 17, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor with built-in gate buffer
- Patent number 9,184,237
- Issue date Nov 10, 2015
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with low source resistance
- Patent number 9,142,662
- Issue date Sep 22, 2015
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with A-face conductive channel and trench protecting wel...
- Patent number 9,064,710
- Issue date Jun 23, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with low source resistance
- Patent number 9,029,945
- Issue date May 12, 2015
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power insulated gate bipolar transistors
- Patent number 8,710,510
- Issue date Apr 29, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with A-face conductive channel and trench protecting wel...
- Patent number 8,211,770
- Issue date Jul 3, 2012
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with A-face conductive channel and trench protecting wel...
- Patent number 7,989,882
- Issue date Aug 2, 2011
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High Power Insulated Gate Bipolar Transistors
- Publication number 20150287805
- Publication date Oct 8, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER TRANSISTOR WITH BUILT-IN GATE BUFFER
- Publication number 20140374773
- Publication date Dec 25, 2014
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Low Source Resistance
- Publication number 20120280252
- Publication date Nov 8, 2012
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Low Source Resistance
- Publication number 20120280270
- Publication date Nov 8, 2012
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WEL...
- Publication number 20120235164
- Publication date Sep 20, 2012
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WEL...
- Publication number 20110250737
- Publication date Oct 13, 2011
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with A-Face Conductive Channel and Trench Protecting Wel...
- Publication number 20090146154
- Publication date Jun 11, 2009
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER INSULATED GATE BIPOLAR TRANSISTORS
- Publication number 20080105949
- Publication date May 8, 2008
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Charlotte Jonas

Person

Patents Grantslast 30 patents

Double guard ring edge termination for silicon carbide devices

High power insulated gate bipolar transistors

Vertical power transistor with built-in gate buffer

Field effect transistor devices with low source resistance

Transistor with A-face conductive channel and trench protecting wel...

Field effect transistor devices with low source resistance

High power insulated gate bipolar transistors

Transistor with A-face conductive channel and trench protecting wel...

Transistor with A-face conductive channel and trench protecting wel...

Patents Applicationslast 30 patents

High Power Insulated Gate Bipolar Transistors

VERTICAL POWER TRANSISTOR WITH BUILT-IN GATE BUFFER

Field Effect Transistor Devices with Low Source Resistance

Field Effect Transistor Devices with Low Source Resistance

TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WEL...

TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WEL...

Transistor with A-Face Conductive Channel and Trench Protecting Wel...

HIGH POWER INSULATED GATE BIPOLAR TRANSISTORS