Che-Hoo Ng

Person

San Martin, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for suppressing the channeling effect in high...
- Patent number 6,806,147
- Issue date Oct 19, 2004
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation with improved ion source life expectancy
- Patent number 6,756,600
- Issue date Jun 29, 2004
- Advanced Micro Devices, Inc.
- Che-Hoo Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for ultra thin resist linewidth reduction using implantation
- Patent number 6,642,152
- Issue date Nov 4, 2003
- Advanced Micro Devices, Inc.
- Che-Hoo Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
XE preamorphizing implantation
- Patent number 6,624,037
- Issue date Sep 23, 2003
- Advanced Micro Devices, Inc.
- Matthew Stephen Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of inhibiting lateral diffusion between adjacent wells by in...
- Patent number 6,514,833
- Issue date Feb 4, 2003
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform channel profile via enhanced diffusion
- Patent number 6,503,801
- Issue date Jan 7, 2003
- Advanced Micro Devices, Inc.
- Richard P. Rouse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for suppressing the channeling effect in high...
- Patent number 6,459,141
- Issue date Oct 1, 2002
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimized contamination of semiconductor wafers within an implantat...
- Patent number 6,452,198
- Issue date Sep 17, 2002
- Advanced Micro Devices, Inc.
- Balaraman Mani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory erase speed by fluorine implant or fluorination
- Patent number 6,445,030
- Issue date Sep 3, 2002
- Advanced Micro Devices, Inc.
- Yider Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor with laterally non-uniform channel doping profile and...
- Patent number 6,380,041
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Geoffrey Choh-Fei Yeap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining ultra shallow junction dosimetry
- Patent number 6,288,405
- Issue date Sep 11, 2001
- Advanced Mirco Devices, Inc.
- Che-Hoo Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resist removal by polishing
- Patent number 6,235,636
- Issue date May 22, 2001
- Advanced Micro Devices, Inc.
- Che-Hoo Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing narrow photoresist lines
- Patent number 6,232,048
- Issue date May 15, 2001
- Advanced Micro Devices
- Matthew S. Buynoski
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor with laterally non-uniform channel doping profile
- Patent number 6,229,177
- Issue date May 8, 2001
- Advanced Micro Devices, Inc.
- Geoffrey Choh-Fei Yeap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a shallow junction in a semiconductor device usi...
- Patent number 6,191,012
- Issue date Feb 20, 2001
- Advanced Micro Devices
- Che-Hoo Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large angle implantation to prevent field turn-on under select gate...
- Patent number 6,146,944
- Issue date Nov 14, 2000
- Advanced Micro Devices, Inc.
- Yue-Song He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mosfet with gate plug using differential oxide growth
- Patent number 6,136,674
- Issue date Oct 24, 2000
- Advanced Micro Devices, Inc.
- Judy X. An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive layer with anti-reflective surface portion
- Patent number 6,087,255
- Issue date Jul 11, 2000
- Advanced Micro Devices, Inc.
- Shekhar Pramanick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
End-of-range damage suppression for ultra-shallow junction formation
- Patent number 6,074,937
- Issue date Jun 13, 2000
- Advanced Micro Devices, Inc.
- Shekhar Pramanick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra shallow junction formation using amorphous silicon layer
- Patent number 6,008,098
- Issue date Dec 28, 1999
- Advanced Micro Devices, Inc.
- Shekhar Pramanick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of charge loss in nonvolatile memory cells by phosphorus...
- Patent number 5,940,735
- Issue date Aug 17, 1999
- Advanced Micro Devices, Inc.
- Sunil D. Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual hard mask for etching
- Patent number 5,876,903
- Issue date Mar 2, 1999
- Advanced Micro Devices
- Che-Hoo Ng
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Conductive layer with anti-reflective surface portion
- Patent number 5,841,179
- Issue date Nov 24, 1998
- Advanced Micro Devices, Inc.
- Shekhar Pramanick
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
XE preamorphizing implantation
- Publication number 20030027381
- Publication date Feb 6, 2003
- Advanced Micro Devices, Inc.
- Matthew Stephen Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION WITH IMPROVED ION SOURCE LIFE EXPECTANCY
- Publication number 20020000523
- Publication date Jan 3, 2002
- CHE-HOO NG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method and apparatus for suppressing the channeling effect in high...

Ion implantation with improved ion source life expectancy

Method for ultra thin resist linewidth reduction using implantation

XE preamorphizing implantation

Method of inhibiting lateral diffusion between adjacent wells by in...

Non-uniform channel profile via enhanced diffusion

Method and apparatus for suppressing the channeling effect in high...

Minimized contamination of semiconductor wafers within an implantat...

Flash memory erase speed by fluorine implant or fluorination

Semiconductor with laterally non-uniform channel doping profile and...

Method for determining ultra shallow junction dosimetry

Resist removal by polishing

Method for preparing narrow photoresist lines

Semiconductor with laterally non-uniform channel doping profile

Method for forming a shallow junction in a semiconductor device usi...

Large angle implantation to prevent field turn-on under select gate...

Mosfet with gate plug using differential oxide growth

Conductive layer with anti-reflective surface portion

End-of-range damage suppression for ultra-shallow junction formation

Ultra shallow junction formation using amorphous silicon layer

Reduction of charge loss in nonvolatile memory cells by phosphorus...

Virtual hard mask for etching

Conductive layer with anti-reflective surface portion

Patents Applicationslast 30 patents

XE preamorphizing implantation

ION IMPLANTATION WITH IMPROVED ION SOURCE LIFE EXPECTANCY