CHENG-HSIANG FAN

Person

TAOYUAN CITY, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory structure having drain stressor, source stress...
- Patent number 12,250,832
- Issue date Mar 11, 2025
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for preparing semiconductor device structure using nitrogen-...
- Patent number 12,243,769
- Issue date Mar 4, 2025
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with air gap between conductive features
- Patent number 11,825,647
- Issue date Nov 21, 2023
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing semiconductor device structure with fine patte...
- Patent number 11,776,813
- Issue date Oct 3, 2023
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure having drain stressor, source stress...
- Patent number 11,757,038
- Issue date Sep 12, 2023
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with air gap between bit line and capacitor co...
- Patent number 11,398,484
- Issue date Jul 26, 2022
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with fine patterns at different leve...
- Patent number 11,315,786
- Issue date Apr 26, 2022
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multi-layer connecting structure and meth...
- Patent number 11,282,743
- Issue date Mar 22, 2022
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure having drain stressor, source stress...
- Patent number 11,211,491
- Issue date Dec 28, 2021
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang Fan
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE USING NITROGEN-...
- Publication number 20250014940
- Publication date Jan 9, 2025
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME
- Publication number 20240087895
- Publication date Mar 14, 2024
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...
- Publication number 20240055520
- Publication date Feb 15, 2024
- NANYA TECHNOLOGY CORPORATION
- CHENG-HSIANG FAN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME
- Publication number 20230386842
- Publication date Nov 30, 2023
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...
- Publication number 20230369488
- Publication date Nov 16, 2023
- NANYA TECHNOLOGY CORPORATION
- CHENG-HSIANG FAN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE USING NITROGEN-...
- Publication number 20230360957
- Publication date Nov 9, 2023
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20220352102
- Publication date Nov 3, 2022
- NANYA TECHNOLOGY CORPORATION
- Po-Hung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR GAP BETWEEN CONDUCTIVE FEATURES
- Publication number 20220262804
- Publication date Aug 18, 2022
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR GAP BETWEEN BIT LINE AND CAPACITOR CO...
- Publication number 20220262802
- Publication date Aug 18, 2022
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH FINE PATTE...
- Publication number 20220044932
- Publication date Feb 10, 2022
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...
- Publication number 20220029019
- Publication date Jan 27, 2022
- NANYA TECHNOLOGY CORPORATION
- CHENG-HSIANG FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTI-LAYER CONNECTING STRUCTURE AND METH...
- Publication number 20220020636
- Publication date Jan 20, 2022
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH FINE PATTERNS AT DIFFERENT LEVE...
- Publication number 20210280421
- Publication date Sep 9, 2021
- NANYA TECHNOLOGY CORPORATION
- Cheng-Hsiang FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...
- Publication number 20210028310
- Publication date Jan 28, 2021
- NANYA TECHNOLOGY CORPORATION
- CHENG-HSIANG FAN
- H01 - BASIC ELECTRIC ELEMENTS

CHENG-HSIANG FAN

Person

Patents Grantslast 30 patents

Semiconductor memory structure having drain stressor, source stress...

Method for preparing semiconductor device structure using nitrogen-...

Semiconductor device with air gap between conductive features

Method for preparing semiconductor device structure with fine patte...

Semiconductor memory structure having drain stressor, source stress...

Semiconductor device with air gap between bit line and capacitor co...

Semiconductor device structure with fine patterns at different leve...

Semiconductor device with multi-layer connecting structure and meth...

Semiconductor memory structure having drain stressor, source stress...

Patents Applicationslast 30 patents

METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE USING NITROGEN-...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME

SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME

SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...

METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE USING NITROGEN-...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE WITH AIR GAP BETWEEN CONDUCTIVE FEATURES

SEMICONDUCTOR DEVICE WITH AIR GAP BETWEEN BIT LINE AND CAPACITOR CO...

METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH FINE PATTE...

SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...

SEMICONDUCTOR DEVICE WITH MULTI-LAYER CONNECTING STRUCTURE AND METH...

SEMICONDUCTOR DEVICE STRUCTURE WITH FINE PATTERNS AT DIFFERENT LEVE...

SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...