Cheng-Wei Cheng

Person

White Plains, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Phase-change memory cell with mixed-material switchable region
- Patent number 12,342,736
- Issue date Jun 24, 2025
- International Business Machines Corporation
- Matthew Joseph BrightSky
Information Patent Grant
Direct growth of lateral III-V bipolar transistor on silicon substrate
- Patent number 11,916,130
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigating moisture driven degradation of silicon doped chalcogenides
- Patent number 11,889,771
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Cheng-Wei Cheng
Information Patent Grant
PCM cell with resistance drift correction
- Patent number 11,818,971
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Heng Wu
Information Patent Grant
Reactivation of a deposited metal liner
- Patent number 11,723,293
- Issue date Aug 8, 2023
- International Business Machines Corporation
- Robert L. Bruce
Information Patent Grant
PCM cell with resistance drift correction
- Patent number 11,563,173
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppressing oxidation of silicon germanium selenium arsenide material
- Patent number 11,271,155
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct growth of lateral III-V bipolar transistor on silicon substrate
- Patent number 10,998,420
- Issue date May 4, 2021
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V transistor device with self-aligned doped bottom barrier
- Patent number 10,937,871
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V CMOS co-integration
- Patent number 10,930,565
- Issue date Feb 23, 2021
- International Business Machines Corporation
- HsinYu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor using template-assisted-sle...
- Patent number 10,923,348
- Issue date Feb 16, 2021
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-state transistor devices with multiple threshold voltage chan...
- Patent number 10,886,415
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Ko-Tao Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,755,925
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V photonic integrated circuits on silicon substrate
- Patent number 10,756,506
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer bonded solar cells and fabrication methods
- Patent number 10,686,090
- Issue date Jun 16, 2020
- International Business Machines Corporation
- Stephen W. Bedell
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Resonant cavity strained group III-V photodetector and LED on silic...
- Patent number 10,601,199
- Issue date Mar 24, 2020
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smoothing surface roughness of III-V semiconductor fins formed from...
- Patent number 10,600,891
- Issue date Mar 24, 2020
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor devices with selective oxidation
- Patent number 10,546,926
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress assisted wet and dry epitaxial lift off
- Patent number 10,460,948
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,460,937
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,453,683
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V photonic integrated circuits on silicon substrate
- Patent number 10,439,356
- Issue date Oct 8, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- G02 - OPTICS
Information Patent Grant
Selective epitaxy using epitaxy-prevention layers
- Patent number 10,388,522
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor devices with selective oxidation
- Patent number 10,367,060
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smoothing surface roughness of III-V semiconductor fins formed from...
- Patent number 10,304,947
- Issue date May 28, 2019
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonant cavity strained group III-V photodetector and LED on silic...
- Patent number 10,256,608
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-V compound materials on silicon
- Patent number 10,217,632
- Issue date Feb 26, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual isolation fin and method of making
- Patent number 10,217,659
- Issue date Feb 26, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface roughness of III-V fin formed on silicon sidewall by implem...
- Patent number 10,205,003
- Issue date Feb 12, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonant cavity strained group III-V photodetector and LED on silic...
- Patent number 10,141,719
- Issue date Nov 27, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHASE CHANGE MEMORY CELL WITH CRYSTALLINE STRUCTURE ALIGNED TO SEED...
- Publication number 20240407178
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Guy M. Cohen
Information Patent Application
PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION
- Publication number 20240196766
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE HETEROSTRUCTURES WITH CONTROLLED LINEAR DYNAMIC RANGE
- Publication number 20230371405
- Publication date Nov 16, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS
- Publication number 20230180636
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM CELL WITH RESISTANCE DRIFT CORRECTION
- Publication number 20230047004
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY WITH LAMINATED CELL
- Publication number 20220407000
- Publication date Dec 22, 2022
- Macronix International Co., Ltd.
- Chih-Hsiang YANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
REACTIVATION OF A DEPOSITED METAL LINER
- Publication number 20220310912
- Publication date Sep 29, 2022
- International Business Machines Corporation
- ROBERT L. BRUCE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATING MOISTURE DRIVEN DEGRADATION OF SILICON DOPED CHALCOGENIDES
- Publication number 20220209113
- Publication date Jun 30, 2022
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES
- Publication number 20220123209
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSING OXIDATION OF SILICON GERMANIUM SELENIUM ARSENIDE MATERIAL
- Publication number 20210288251
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT GROWTH OF LATERAL III-V BIPOLAR TRANSISTOR ON SILICON SUBSTRATE
- Publication number 20210249521
- Publication date Aug 12, 2021
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM CELL WITH RESISTANCE DRIFT CORRECTION
- Publication number 20210210683
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR USING TEMPLATE-ASSISTED-SL...
- Publication number 20200381250
- Publication date Dec 3, 2020
- International Business Machines Corporation
- Hiroyuki MIYAZOE
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTI-STATE TRANSISTOR DEVICES WITH MULTIPLE THRESHOLD VOLTAGE CHAN...
- Publication number 20200287055
- Publication date Sep 10, 2020
- International Business Machines Corporation
- Ko-Tao Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR DEVICES WITH SELECTIVE OXIDATION
- Publication number 20200235207
- Publication date Jul 23, 2020
- Tessera, Inc.
- Cheng-wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V CMOS CO-INTEGRATION
- Publication number 20200144123
- Publication date May 7, 2020
- International Business Machines Corporation
- HsinYu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V PHOTONIC INTEGRATED CIRCUITS ON SILICON SUBSTRATE
- Publication number 20190363509
- Publication date Nov 28, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20190341250
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT GROWTH OF LATERAL III-V BIPOLAR TRANSISTOR ON SILICON SUBSTRATE
- Publication number 20190312126
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR DEVICES WITH SELECTIVE OXIDATION
- Publication number 20190259834
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMOOTHING SURFACE ROUGHNESS OF III-V SEMICONDUCTOR FINS FORMED FROM...
- Publication number 20190237565
- Publication date Aug 1, 2019
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMOOTHING SURFACE ROUGHNESS OF III-V SEMICONDUCTOR FINS FORMED FROM...
- Publication number 20190165144
- Publication date May 30, 2019
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resonant Cavity Strained Group III-V Photodetector And LED On Silic...
- Publication number 20190140424
- Publication date May 9, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20180277367
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20180277368
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS WITH MIDDLE OF LINE PROCESSING OF III-V MATERIAL ON MANDREL
- Publication number 20180233517
- Publication date Aug 16, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS With Middle Of Line Processing Of III-V Material On Mandrel
- Publication number 20180233516
- Publication date Aug 16, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resonant Cavity Strained Group III-V Photodetector And LED On Silic...
- Publication number 20180226769
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resonant Cavity Strained Group III-V Photodetector And LED On Silic...
- Publication number 20180219355
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS
- Publication number 20180218900
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Cheng-Wei Cheng

Person

Patents Grantslast 30 patents

Phase-change memory cell with mixed-material switchable region

Direct growth of lateral III-V bipolar transistor on silicon substrate

Mitigating moisture driven degradation of silicon doped chalcogenides

PCM cell with resistance drift correction

Reactivation of a deposited metal liner

PCM cell with resistance drift correction

Suppressing oxidation of silicon germanium selenium arsenide material

Direct growth of lateral III-V bipolar transistor on silicon substrate

III-V transistor device with self-aligned doped bottom barrier

III-V CMOS co-integration

Gate-all-around field effect transistor using template-assisted-sle...

Multi-state transistor devices with multiple threshold voltage chan...

Post growth heteroepitaxial layer separation for defect reduction i...

III-V photonic integrated circuits on silicon substrate

Wafer bonded solar cells and fabrication methods

Resonant cavity strained group III-V photodetector and LED on silic...

Smoothing surface roughness of III-V semiconductor fins formed from...

III-V semiconductor devices with selective oxidation

Stress assisted wet and dry epitaxial lift off

Post growth heteroepitaxial layer separation for defect reduction i...

Post growth heteroepitaxial layer separation for defect reduction i...

III-V photonic integrated circuits on silicon substrate

Selective epitaxy using epitaxy-prevention layers

III-V semiconductor devices with selective oxidation

Smoothing surface roughness of III-V semiconductor fins formed from...

Resonant cavity strained group III-V photodetector and LED on silic...

Integration of III-V compound materials on silicon

Dual isolation fin and method of making

Surface roughness of III-V fin formed on silicon sidewall by implem...

Resonant cavity strained group III-V photodetector and LED on silic...

Patents Applicationslast 30 patents

PHASE CHANGE MEMORY CELL WITH CRYSTALLINE STRUCTURE ALIGNED TO SEED...

PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION

PHASE CHANGE HETEROSTRUCTURES WITH CONTROLLED LINEAR DYNAMIC RANGE

SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS

PCM CELL WITH RESISTANCE DRIFT CORRECTION

MEMORY WITH LAMINATED CELL

REACTIVATION OF A DEPOSITED METAL LINER

MITIGATING MOISTURE DRIVEN DEGRADATION OF SILICON DOPED CHALCOGENIDES

SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES

SUPPRESSING OXIDATION OF SILICON GERMANIUM SELENIUM ARSENIDE MATERIAL

DIRECT GROWTH OF LATERAL III-V BIPOLAR TRANSISTOR ON SILICON SUBSTRATE

PCM CELL WITH RESISTANCE DRIFT CORRECTION

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR USING TEMPLATE-ASSISTED-SL...

MULTI-STATE TRANSISTOR DEVICES WITH MULTIPLE THRESHOLD VOLTAGE CHAN...

III-V SEMICONDUCTOR DEVICES WITH SELECTIVE OXIDATION

III-V CMOS CO-INTEGRATION

III-V PHOTONIC INTEGRATED CIRCUITS ON SILICON SUBSTRATE

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

DIRECT GROWTH OF LATERAL III-V BIPOLAR TRANSISTOR ON SILICON SUBSTRATE

III-V SEMICONDUCTOR DEVICES WITH SELECTIVE OXIDATION

SMOOTHING SURFACE ROUGHNESS OF III-V SEMICONDUCTOR FINS FORMED FROM...

SMOOTHING SURFACE ROUGHNESS OF III-V SEMICONDUCTOR FINS FORMED FROM...

Resonant Cavity Strained Group III-V Photodetector And LED On Silic...

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

CMOS WITH MIDDLE OF LINE PROCESSING OF III-V MATERIAL ON MANDREL

CMOS With Middle Of Line Processing Of III-V Material On Mandrel

Resonant Cavity Strained Group III-V Photodetector And LED On Silic...

Resonant Cavity Strained Group III-V Photodetector And LED On Silic...

SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS