Cheong Min Hong

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods and structures for a split gate memory cell structure
- Patent number 10,153,349
- Issue date Dec 11, 2018
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate device with doped region and method therefor
- Patent number 10,026,820
- Issue date Jul 17, 2018
- NXP USA, INC.
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming split gate memory with improved reliability
- Patent number 9,847,397
- Issue date Dec 19, 2017
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable split gate memory cell array
- Patent number 9,685,339
- Issue date Jun 20, 2017
- NXP USA, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating non-volatile memory cells with static random...
- Patent number 9,653,164
- Issue date May 16, 2017
- NXP USA, INC.
- Cheong Min Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods and structures for a split gate memory cell structure
- Patent number 9,590,058
- Issue date Mar 7, 2017
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell and device structure integration
- Patent number 9,559,178
- Issue date Jan 31, 2017
- NXP USA, INC.
- Satoshi Sekine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a non-volatile memory (NVM) with trap-up reduction
- Patent number 9,548,314
- Issue date Jan 17, 2017
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanocrystal memory and methods for forming same
- Patent number 9,514,945
- Issue date Dec 6, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming supra low threshold devices
- Patent number 9,437,500
- Issue date Sep 6, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming split gate memory with improved reliability
- Patent number 9,397,176
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell and a method of making
- Patent number 9,397,201
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming different voltage devices with high-k metal gate
- Patent number 9,368,499
- Issue date Jun 14, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory cell and driver circuitry with gate oxide form...
- Patent number 9,349,453
- Issue date May 24, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming contact landing regions in split-gate non-volat...
- Patent number 9,331,092
- Issue date May 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a polysilicon nanocrystal thin film storage bitcell...
- Patent number 9,275,864
- Issue date Mar 1, 2016
- Freescale Semiconductor,INC
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated split gate non-volatile memory cell and logic device
- Patent number 9,252,246
- Issue date Feb 2, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell
- Patent number 9,219,167
- Issue date Dec 22, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate memory cells having select-gate sidewall metal silicide...
- Patent number 9,165,652
- Issue date Oct 20, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming different voltage devices with high-K metal gate
- Patent number 9,142,566
- Issue date Sep 22, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell and high-K and metal gate transistor...
- Patent number 9,129,996
- Issue date Sep 8, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Frank K. Baker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high-k and metal gate integration usi...
- Patent number 9,129,855
- Issue date Sep 8, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field focusing features in a ReRAM cell
- Patent number 9,118,008
- Issue date Aug 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field focusing features in a ReRAM cell
- Patent number 9,114,980
- Issue date Aug 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Feng Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Split gate non-volatile memory (NVM) cell and method therefor
- Patent number 9,112,047
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biasing split gate memory cell during power-off mode
- Patent number 9,111,639
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated split gate non-volatile memory cell and logic structure
- Patent number 9,082,650
- Issue date Jul 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reram device structure
- Patent number 9,076,519
- Issue date Jul 7, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming contact landing regions in split-gate non-volat...
- Patent number 9,054,208
- Issue date Jun 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high voltage transistor integration
- Patent number 9,006,093
- Issue date Apr 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPLIT GATE DEVICE WITH DOPED REGION AND METHOD THEREFOR
- Publication number 20170278937
- Publication date Sep 28, 2017
- FREESCALE SEMICONDUCTOR, INC.
- WEIZE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE
- Publication number 20170194444
- Publication date Jul 6, 2017
- NXP USA, Inc.
- CHEONG MIN HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY
- Publication number 20160300919
- Publication date Oct 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SUPRA LOW THRESHOLD DEVICES
- Publication number 20160268169
- Publication date Sep 15, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTEGRATING NON-VOLATILE MEMORY CELLS WITH STATIC RANDOM...
- Publication number 20160267979
- Publication date Sep 15, 2016
- FREESCALE SEMICONDUCTOR, INC.
- CHEONG MIN HONG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND DEVICE STRUCTURE INTEGRATION
- Publication number 20160218112
- Publication date Jul 28, 2016
- FREESCALE SEMICONDUCTOR, INC.
- SATOSHI SEKINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOCRYSTAL MEMORY AND METHODS FOR FORMING SAME
- Publication number 20160172199
- Publication date Jun 16, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING
- Publication number 20160071960
- Publication date Mar 10, 2016
- FREESCALE SEMICONDUCTOR, INC.
- JACOB T. WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY CELL AND DRIVER CIRCUITRY WITH GATE OXIDE FORM...
- Publication number 20160064082
- Publication date Mar 3, 2016
- CHEONG MIN HONG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING A MEMORY STRUCTURE HAVING NANOCRYSTALS
- Publication number 20160049303
- Publication date Feb 18, 2016
- FREESCALE SEMICONDUCTOR, INC.
- EUHNGI LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY
- Publication number 20160035848
- Publication date Feb 4, 2016
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Different Voltage Devices with High-K Metal Gate
- Publication number 20150380408
- Publication date Dec 31, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...
- Publication number 20150236035
- Publication date Aug 20, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING
- Publication number 20150179816
- Publication date Jun 25, 2015
- JACOB T. WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...
- Publication number 20150091079
- Publication date Apr 2, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...
- Publication number 20150069490
- Publication date Mar 12, 2015
- JANE A. YATER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Different Voltage Devices with High-K Metal Gate
- Publication number 20150069524
- Publication date Mar 12, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND HIGH-K AND METAL GATE TRANSISTOR...
- Publication number 20150072489
- Publication date Mar 12, 2015
- FRANK K. BAKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Form a Polysilicon Nanocrystal Thin Film Storage Bitcell...
- Publication number 20150054044
- Publication date Feb 26, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE
- Publication number 20150054049
- Publication date Feb 26, 2015
- Asanga H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC DEVICE
- Publication number 20150054050
- Publication date Feb 26, 2015
- ASANGA H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELL
- Publication number 20150035034
- Publication date Feb 5, 2015
- BRIAN A. WINSTEAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND HIGH VOLTAGE TRANSISTOR INTEGRATION
- Publication number 20150001612
- Publication date Jan 1, 2015
- CHEONG MIN HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE
- Publication number 20150001606
- Publication date Jan 1, 2015
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RERAM DEVICE STRUCTURE
- Publication number 20150004747
- Publication date Jan 1, 2015
- CHEONG M. HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE SPLIT GATE MEMORY CELL ARRAY
- Publication number 20140319593
- Publication date Oct 30, 2014
- Jane A. YATER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIASING SPLIT GATE MEMORY CELL DURING POWER-OFF MODE
- Publication number 20140321213
- Publication date Oct 30, 2014
- CHEONG MIN HONG
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD FOCUSING FEATURES IN A RERAM CELL
- Publication number 20140295639
- Publication date Oct 2, 2014
- FREESCALE SEMICONDUCTOR, INC.
- FENG ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL AND METHOD THEREFOR
- Publication number 20140239372
- Publication date Aug 28, 2014
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Memory Cells Having Carbon Impurities and Related Manu...
- Publication number 20140209995
- Publication date Jul 31, 2014
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS

Cheong Min Hong

Person

Patents Grantslast 30 patents

Methods and structures for a split gate memory cell structure

Split gate device with doped region and method therefor

Method of forming split gate memory with improved reliability

Scalable split gate memory cell array

Method for integrating non-volatile memory cells with static random...

Methods and structures for a split gate memory cell structure

Non-volatile memory (NVM) cell and device structure integration

Method of making a non-volatile memory (NVM) with trap-up reduction

Nanocrystal memory and methods for forming same

Method of forming supra low threshold devices

Method of forming split gate memory with improved reliability

Non-volatile memory (NVM) cell and a method of making

Method of forming different voltage devices with high-k metal gate

Semiconductor memory cell and driver circuitry with gate oxide form...

Methods for forming contact landing regions in split-gate non-volat...

Method to form a polysilicon nanocrystal thin film storage bitcell...

Integrated split gate non-volatile memory cell and logic device

Non-volatile memory (NVM) cell

Split-gate memory cells having select-gate sidewall metal silicide...

Method of forming different voltage devices with high-K metal gate

Non-volatile memory (NVM) cell and high-K and metal gate transistor...

Non-volatile memory (NVM) and high-k and metal gate integration usi...

Field focusing features in a ReRAM cell

Field focusing features in a ReRAM cell

Split gate non-volatile memory (NVM) cell and method therefor

Biasing split gate memory cell during power-off mode

Integrated split gate non-volatile memory cell and logic structure

Reram device structure

Methods for forming contact landing regions in split-gate non-volat...

Non-volatile memory (NVM) and high voltage transistor integration

Patents Applicationslast 30 patents

SPLIT GATE DEVICE WITH DOPED REGION AND METHOD THEREFOR

METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE

METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY

METHOD OF FORMING SUPRA LOW THRESHOLD DEVICES

METHOD FOR INTEGRATING NON-VOLATILE MEMORY CELLS WITH STATIC RANDOM...

NON-VOLATILE MEMORY (NVM) CELL AND DEVICE STRUCTURE INTEGRATION

NANOCRYSTAL MEMORY AND METHODS FOR FORMING SAME

NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING

SEMICONDUCTOR MEMORY CELL AND DRIVER CIRCUITRY WITH GATE OXIDE FORM...

METHOD FOR FORMING A MEMORY STRUCTURE HAVING NANOCRYSTALS

METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY

Method of Forming Different Voltage Devices with High-K Metal Gate

Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...

NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING

NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...

Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...

Method of Forming Different Voltage Devices with High-K Metal Gate

NON-VOLATILE MEMORY (NVM) CELL AND HIGH-K AND METAL GATE TRANSISTOR...

Method to Form a Polysilicon Nanocrystal Thin Film Storage Bitcell...

INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE

INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC DEVICE

SPLIT GATE NON-VOLATILE MEMORY CELL

NON-VOLATILE MEMORY (NVM) AND HIGH VOLTAGE TRANSISTOR INTEGRATION

METHODS AND STRUCTURES FOR A SPLIT GATE MEMORY CELL STRUCTURE

RERAM DEVICE STRUCTURE

SCALABLE SPLIT GATE MEMORY CELL ARRAY

BIASING SPLIT GATE MEMORY CELL DURING POWER-OFF MODE

FIELD FOCUSING FEATURES IN A RERAM CELL

SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL AND METHOD THEREFOR

Non-Volatile Memory Cells Having Carbon Impurities and Related Manu...