Chi On Chui

Person

San Mateo, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forming a non-planar transistor having a quantum well channel
- Patent number 10,355,112
- Issue date Jul 16, 2019
- Intel Corporation
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a non-planar transistor having a quantum well channel
- Patent number 9,806,180
- Issue date Oct 31, 2017
- Intel Corporation
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a non-planar transistor having a quantum well channel
- Patent number 8,921,830
- Issue date Dec 30, 2014
- Intel Corporation
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a non-planar transistor having a quantum well channel
- Patent number 8,237,153
- Issue date Aug 7, 2012
- Intel Corporation
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a non-planar transistor having a quantum well channel
- Patent number 7,928,426
- Issue date Apr 19, 2011
- Intel Corporation
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium substrate-type materials and approach therefor
- Patent number 7,919,381
- Issue date Apr 5, 2011
- Canon Kabushiki Kaisha
- Ammar Munir Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium substrate-type materials and approach therefor
- Patent number 7,772,078
- Issue date Aug 10, 2010
- The Board of Trustees of the Leland Stanford Junior University
- Ammar Munir Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain-inducing semiconductor regions
- Patent number 7,629,603
- Issue date Dec 8, 2009
- Intel Corporation
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium substrate-type materials and approach therefor
- Patent number 7,495,313
- Issue date Feb 24, 2009
- Board of Trustees of the Leland Stanford Junior University
- Ammar Munir Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a type I heterostructure in a group IV semiconductor
- Patent number 7,435,987
- Issue date Oct 14, 2008
- Intel Corporation
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k dielectric for thermodynamically-stable substrate-type mater...
- Patent number 7,271,458
- Issue date Sep 18, 2007
- The Board of Trustees of the Leland Stanford Junior University
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Forming A Non-Planar Transistor Having A Quantum Well Channel
- Publication number 20180033875
- Publication date Feb 1, 2018
- Intel Corporation
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming A Non-Planar Transistor Having A Quantum Well Channel
- Publication number 20150084000
- Publication date Mar 26, 2015
- Intel Corporation
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming A Non-Planar Transistor Having A Quantum Well Channel
- Publication number 20120211726
- Publication date Aug 23, 2012
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming A Non-Planar Transistor Having A Quantum Well Channel
- Publication number 20110156006
- Publication date Jun 30, 2011
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM SUBSTRATE-TYPE MATERIALS AND APPROACH THEREFOR
- Publication number 20100159678
- Publication date Jun 24, 2010
- Canon Kabushiki Kaisha
- Ammar Munir Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM SUBSTRATE-TYPE MATERIALS AND APPROACH THEREFOR
- Publication number 20090061604
- Publication date Mar 5, 2009
- Canon Kabushiki Kaisha
- Ammar Munir Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A TYPE I HETEROSTRUCTURE IN A GROUP IV SEMICONDUCTOR
- Publication number 20080237572
- Publication date Oct 2, 2008
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a non-planar transistor having a quantum well channel
- Publication number 20080237577
- Publication date Oct 2, 2008
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain-inducing semiconductor regions
- Publication number 20070284613
- Publication date Dec 13, 2007
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K DIELECTRIC FOR THERMODYNAMICALLY-STABLE SUBSTRATE-TYPE MATER...
- Publication number 20070170541
- Publication date Jul 26, 2007
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium substrate-type materials and approach therefor
- Publication number 20060019466
- Publication date Jan 26, 2006
- Ammar Munir Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS

Chi On Chui

Person

Patents Grantslast 30 patents

Forming a non-planar transistor having a quantum well channel

Forming a non-planar transistor having a quantum well channel

Forming a non-planar transistor having a quantum well channel

Forming a non-planar transistor having a quantum well channel

Forming a non-planar transistor having a quantum well channel

Germanium substrate-type materials and approach therefor

Germanium substrate-type materials and approach therefor

Strain-inducing semiconductor regions

Germanium substrate-type materials and approach therefor

Forming a type I heterostructure in a group IV semiconductor

High-k dielectric for thermodynamically-stable substrate-type mater...

Patents Applicationslast 30 patents

Forming A Non-Planar Transistor Having A Quantum Well Channel

Forming A Non-Planar Transistor Having A Quantum Well Channel

Forming A Non-Planar Transistor Having A Quantum Well Channel

Forming A Non-Planar Transistor Having A Quantum Well Channel

GERMANIUM SUBSTRATE-TYPE MATERIALS AND APPROACH THEREFOR

GERMANIUM SUBSTRATE-TYPE MATERIALS AND APPROACH THEREFOR

FORMING A TYPE I HETEROSTRUCTURE IN A GROUP IV SEMICONDUCTOR

Forming a non-planar transistor having a quantum well channel

Strain-inducing semiconductor regions

HIGH-K DIELECTRIC FOR THERMODYNAMICALLY-STABLE SUBSTRATE-TYPE MATER...

Germanium substrate-type materials and approach therefor