Chien-Ning YAO

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Gate air spacer for fin-like field effect transistor
- Patent number 12,211,922
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with wrap around silicide and hybrid fin
- Patent number 12,205,998
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with inner spacer
- Patent number 12,166,129
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field-effect transistor device and method of forming
- Patent number 12,125,922
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for stacked multi-gate device
- Patent number 12,107,169
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,074,204
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with inner spacer liner layer and method
- Patent number 12,051,736
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Han Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,996,482
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap in inner spacers and methods of fabricating the same in fie...
- Patent number 11,990,529
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,967,594
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric liner for field effect transistors
- Patent number 11,929,287
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistor with dual inner spacers
- Patent number 11,916,122
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,901,364
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field-effect transistor device and method of forming
- Patent number 11,791,421
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 11,784,252
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate air spacer for fin-like field effect transistor
- Patent number 11,764,281
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with airgap and method of forming the same
- Patent number 11,735,641
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming epitaxial source/drain features and semiconducto...
- Patent number 11,710,774
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for stacked multi-gate device
- Patent number 11,699,760
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with inner spacer
- Patent number 11,670,718
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,605,737
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap in inner spacers and methods of fabricating the same in fie...
- Patent number 11,502,183
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabrication thereof
- Patent number 11,469,326
- Issue date Oct 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,450,663
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,444,202
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate air spacer for fin-like field effect transistor
- Patent number 11,417,750
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 11,335,806
- Issue date May 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,309,424
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 11,271,113
- Issue date Mar 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field-effect transistor device and method of forming
- Patent number 11,227,956
- Issue date Jan 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELEC...
- Publication number 20240395859
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhi-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE
- Publication number 20240387738
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240379875
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE
- Publication number 20240379855
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240372010
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240363703
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NARROWED SPACER AND METHOD
- Publication number 20240355907
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXI...
- Publication number 20240355901
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH INNER SPACER LINER LAYER AND METHOD
- Publication number 20240355908
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Han CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIE...
- Publication number 20240313082
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20240304687
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240234419
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS
- Publication number 20240194758
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhi-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC LINER FOR FIELD EFFECT TRANSISTORS
- Publication number 20240170337
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- Zhi-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240170556
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240170534
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhi-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240153958
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE
- Publication number 20240006536
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Source/Drain Regions and Methods of Forming the Same
- Publication number 20230420520
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Han Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230411527
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230402543
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230395655
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURES AND CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20230369456
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE WITH AIRGAP AND METHOD OF FORMING THE SAME
- Publication number 20230369443
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanosheet Field-Effect Transistor Device and Method of Forming
- Publication number 20230369512
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Air Spacer for Fin-Like Field Effect Transistor
- Publication number 20230361192
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES AND SEMICONDUCTO...
- Publication number 20230335607
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER
- Publication number 20230299204
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230215950
- Publication date Jul 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhi-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230197856
- Publication date Jun 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS

Chien-Ning YAO

Person

Patents Grantslast 30 patents

Gate air spacer for fin-like field effect transistor

Semiconductor device with wrap around silicide and hybrid fin

Semiconductor device structure with inner spacer

Nanosheet field-effect transistor device and method of forming

Contact structure for stacked multi-gate device

Semiconductor structure and method for forming the same

Field effect transistor with inner spacer liner layer and method

Semiconductor device

Air gap in inner spacers and methods of fabricating the same in fie...

Semiconductor device structure and methods of forming the same

Dielectric liner for field effect transistors

Gate all around transistor with dual inner spacers

Semiconductor device structure and methods of forming the same

Nanosheet field-effect transistor device and method of forming

Semiconductor device structure

Gate air spacer for fin-like field effect transistor

FinFET structure with airgap and method of forming the same

Method for forming epitaxial source/drain features and semiconducto...

Contact structure for stacked multi-gate device

Semiconductor device structure with inner spacer

Semiconductor device and manufacturing method thereof

Air gap in inner spacers and methods of fabricating the same in fie...

Semiconductor devices and methods of fabrication thereof

Semiconductor device structure and methods of forming the same

Semiconductor device and method of forming the same

Gate air spacer for fin-like field effect transistor

Semiconductor device structure and method for forming the same

Semiconductor device and manufacturing method thereof

Semiconductor device structure and method for forming the same

Nanosheet field-effect transistor device and method of forming

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELEC...

SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE

NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

SEMICONDUCTOR STRUCTURE

FIELD EFFECT TRANSISTOR WITH NARROWED SPACER AND METHOD

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXI...

FIELD EFFECT TRANSISTOR WITH INNER SPACER LINER LAYER AND METHOD

AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIE...

SPACER STRUCTURES IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS

DIELECTRIC LINER FOR FIELD EFFECT TRANSISTORS

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE

Transistor Source/Drain Regions and Methods of Forming the Same

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SPACER STRUCTURES AND CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES

FINFET STRUCTURE WITH AIRGAP AND METHOD OF FORMING THE SAME

Nanosheet Field-Effect Transistor Device and Method of Forming

Gate Air Spacer for Fin-Like Field Effect Transistor

METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES AND SEMICONDUCTO...

SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME