Chih-Yuan Hsiao

Person

Feng-Shan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Four transistors static-random-access-memory
- Patent number 6,686,635
- Issue date Feb 3, 2004
- United Microelectronics Corp.
- Chih-Yuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Four transistor static-random-access-memory cell
- Patent number 6,646,310
- Issue date Nov 11, 2003
- United Microelectronics Corp.
- Chih-Yuan Hsiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Four transistors static-random-access-memory cell
- Patent number 6,366,493
- Issue date Apr 2, 2002
- United Microelectronics Corp.
- Chih-Yuan Hsiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a transistor
- Patent number 6,261,912
- Issue date Jul 17, 2001
- United Microelectronics Corp.
- Chih-Yuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a MOS transistor
- Patent number 6,238,988
- Issue date May 29, 2001
- United Microelectronics Corp.
- Chih-Yuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming gate contact in complementary metal oxide semico...
- Patent number 6,174,776
- Issue date Jan 16, 2001
- United Microelectronics Corp.
- Ching-Chiao Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a diode protection circuit connecting to MOS device
- Patent number 5,946,574
- Issue date Aug 31, 1999
- United Microelectronics Corp.
- Chih-Yuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for avoiding the junction leakage
- Publication number 20020106880
- Publication date Aug 8, 2002
- Po-Chao Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Four transistors static-random-access-memory and forming method
- Publication number 20020094616
- Publication date Jul 18, 2002
- United Microelectronics Corp.
- Chih-Yuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Four transistors static-random-access-memory cell
- Publication number 20020047149
- Publication date Apr 25, 2002
- United Microelectronics Corp.
- Chih-Yuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Chih-Yuan Hsiao

Person

Patents Grantslast 30 patents

Four transistors static-random-access-memory

Four transistor static-random-access-memory cell

Four transistors static-random-access-memory cell

Method of fabricating a transistor

Method of forming a MOS transistor

Method for forming gate contact in complementary metal oxide semico...

Method for forming a diode protection circuit connecting to MOS device

Patents Applicationslast 30 patents

Method for avoiding the junction leakage

Four transistors static-random-access-memory and forming method

Four transistors static-random-access-memory cell