Chihping Kuo

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Formation of Ohmic contacts in III-nitride light emitting devices
- Patent number 7,345,323
- Issue date Mar 18, 2008
- Philips Lumileds Lighting Company LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of Ohmic contacts in III-nitride light emitting devices
- Patent number 6,914,272
- Issue date Jul 5, 2005
- LumiLeds Lighting U.S., LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity surface emitting laser utilizing a reversed biased...
- Patent number 6,680,963
- Issue date Jan 20, 2004
- Lux Net Corporation
- Andrew Shuh-Huei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of ohmic contacts in III-nitride light emitting devices
- Patent number 6,657,300
- Issue date Dec 2, 2003
- LumiLeds Lighting U.S., LLC
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical cavity surface emitting laser having improved light output...
- Patent number 6,553,053
- Issue date Apr 22, 2003
- Luxnet COrporation
- Andrew Shuh-Huei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a vertical-cavity surface emitting laser with imp...
- Patent number 6,534,331
- Issue date Mar 18, 2003
- Luxnet COrporation
- Andrew Shuh-Huei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of strain engineering and impurity control in III-V nitride...
- Patent number 6,274,399
- Issue date Aug 14, 2001
- LumiLeds Lighting, U.S. LLC
- R. Scott Kern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain engineered and impurity controlled III-V nitride semiconduct...
- Patent number 6,194,742
- Issue date Feb 27, 2001
- LumiLeds Lighting, U.S., LLC
- R. Scott Kern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode with a thick transparent layer
- Patent number 5,233,204
- Issue date Aug 3, 1993
- Hewlett-Packard Company
- Robert M. Fletcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode with an electrically conductive window
- Patent number 5,008,718
- Issue date Apr 16, 1991
- Robert M. Fletcher
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Formation of Ohmic contacts in III-nitride light emitting devices
- Publication number 20050167693
- Publication date Aug 4, 2005
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Ohmic contacts in III-nitride light emitting devices
- Publication number 20040075097
- Publication date Apr 22, 2004
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical-cavity surface emitting laser utilizing a high resistivity...
- Publication number 20030021318
- Publication date Jan 30, 2003
- Andrew Shuh-Huei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical-cavity surface emitting laser utilizing a reversed biased...
- Publication number 20030021326
- Publication date Jan 30, 2003
- Andrew Shuh-Huei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical cavity surface emitting laser having improved light output...
- Publication number 20030021317
- Publication date Jan 30, 2003
- Andrew Shuh-Huei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A VERTICAL-CAVITY SURFACE EMITTING LASER WITH IMP...
- Publication number 20030022406
- Publication date Jan 30, 2003
- Andrew Shuh-Huei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of ohmic contacts in III-nitride light emitting devices
- Publication number 20020008243
- Publication date Jan 24, 2002
- Werner K. Goetz
- H01 - BASIC ELECTRIC ELEMENTS

Chihping Kuo

Person

Patents Grantslast 30 patents

Formation of Ohmic contacts in III-nitride light emitting devices

Formation of Ohmic contacts in III-nitride light emitting devices

Vertical-cavity surface emitting laser utilizing a reversed biased...

Formation of ohmic contacts in III-nitride light emitting devices

Vertical cavity surface emitting laser having improved light output...

Method for making a vertical-cavity surface emitting laser with imp...

Method of strain engineering and impurity control in III-V nitride...

Strain engineered and impurity controlled III-V nitride semiconduct...

Light-emitting diode with a thick transparent layer

Light-emitting diode with an electrically conductive window

Patents Applicationslast 30 patents

Formation of Ohmic contacts in III-nitride light emitting devices

Formation of Ohmic contacts in III-nitride light emitting devices

Vertical-cavity surface emitting laser utilizing a high resistivity...

Vertical-cavity surface emitting laser utilizing a reversed biased...

Vertical cavity surface emitting laser having improved light output...

METHOD FOR MAKING A VERTICAL-CAVITY SURFACE EMITTING LASER WITH IMP...

Formation of ohmic contacts in III-nitride light emitting devices