Chii-Horng LI

Person

Hsinchu County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Source/drain regions of semiconductor device and method of forming...
- Patent number 12,336,237
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
Information Patent Grant
Source/drain structure for semiconductor device
- Patent number 12,336,210
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with a source/drain barrier layer and methods...
- Patent number 12,278,145
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain recess formation with metal-comprising maski...
- Patent number 12,243,783
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low Ge isolated epitaxial layer growth over nano-sheet architecture...
- Patent number 12,191,393
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yan-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,159,925
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming
- Patent number 12,094,778
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETs and methods of forming FETs
- Patent number 12,094,761
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and methods of manufacturing semiconductor devices
- Patent number 12,087,845
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an undoped region under a source/drain
- Patent number 12,068,395
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 12,057,450
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,002,854
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Heng-Wen Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,948,999
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet semiconductor device and method for manufacturing the same
- Patent number 11,942,550
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor method and device
- Patent number 11,854,901
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Hsiung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supportive layer in source/drains of FinFET devices
- Patent number 11,855,142
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a source/drain recess in a semiconductor device
- Patent number 11,824,120
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eric Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer susceptor with improved thermal characteristics
- Patent number 11,773,506
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hung Lin
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Doping profile for strained source/drain region
- Patent number 11,749,752
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device
- Patent number 11,735,660
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial layer between fin and source/drain region
- Patent number 11,735,668
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yun Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETS and methods of forming FETS
- Patent number 11,728,208
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacture
- Patent number 11,710,777
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 11,652,105
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETs and methods of forming FETs
- Patent number 11,600,715
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure with enlarged volu...
- Patent number 11,581,425
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Hsi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure for semiconductor device
- Patent number 11,575,026
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure with reduced nodul...
- Patent number 11,569,084
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial layer between Fin and source/drain region
- Patent number 11,482,620
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yun Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supportive layer in source/drains of FinFET devices
- Patent number 11,476,331
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW-RESISTANCE SOURCE/DRAIN FEATURES
- Publication number 20250234610
- Publication date Jul 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRUCTURES WITH VOID FOR SEMICONDUCTOR DEVICES
- Publication number 20250234611
- Publication date Jul 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei KWOK
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250212455
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei LIU
Information Patent Application
SEMICONDUCTOR DEVICES WITH A SOURCE/DRAIN BARRIER LAYER AND METHODS...
- Publication number 20250212493
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Wei Lee
Information Patent Application
METHOD AND CHEMICAL VAPOR DEPOSITION APPARATUS FOR MANUFACTURING SE...
- Publication number 20250201568
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei KWOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER STRUCTURES IN SOURCE/DRAIN STRUCTURES OF NANOSTRU...
- Publication number 20250203904
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Hao LU
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...
- Publication number 20250151358
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zheng Hui LIM
Information Patent Application
SOURCE/DRAIN STRUCTURE DOPANT CLUSTER DESIGN
- Publication number 20250126836
- Publication date Apr 17, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Yan-Ting LIN
Information Patent Application
LOW GE ISOLATED EPITAXIAL LAYER GROWTH OVER NANO-SHEET ARCHITECTURE...
- Publication number 20250089295
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yan-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH EPITAXIAL SOURCE/DRAIN REGION WITH A BOT...
- Publication number 20250081520
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chia Cheng
Information Patent Application
SEMICONDUCTOR DEVICES WITH EPITAXIAL SOURCE/DRAIN REGION WITH A BOT...
- Publication number 20250081529
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chia CHENG
Information Patent Application
FURNACE INNER TUBE FOR PROCESS UNIFORMITY
- Publication number 20250062139
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250048689
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250048666
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pin-Chu LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES AND MANUFACTURING ME...
- Publication number 20250022957
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20250006549
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having FIN Structure and Method of Forming The...
- Publication number 20240429305
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Min YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING...
- Publication number 20240387629
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions and Methods of Forming Same
- Publication number 20240379454
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240371983
- Publication date Nov 7, 2024
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF
- Publication number 20240371935
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Yu Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240363418
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN
- Publication number 20240363729
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS
- Publication number 20240355826
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20240274667
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Heng-Wen Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240204084
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240194788
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chang SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- Publication number 20240096958
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240021618
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yun Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE
- Publication number 20230387304
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eric PENG
- H01 - BASIC ELECTRIC ELEMENTS

Chii-Horng LI

Person

Patents Grantslast 30 patents

Source/drain regions of semiconductor device and method of forming...

Source/drain structure for semiconductor device

Semiconductor devices with a source/drain barrier layer and methods...

Epitaxial source/drain recess formation with metal-comprising maski...

Low Ge isolated epitaxial layer growth over nano-sheet architecture...

Semiconductor device and method

Fin field-effect transistor device and method of forming

FETs and methods of forming FETs

System and methods of manufacturing semiconductor devices

Method for forming an undoped region under a source/drain

Epitaxy regions with large landing areas for contact plugs

Semiconductor device and method of manufacture

Semiconductor device

Nanosheet semiconductor device and method for manufacturing the same

Semiconductor method and device

Supportive layer in source/drains of FinFET devices

Method of fabricating a source/drain recess in a semiconductor device

Wafer susceptor with improved thermal characteristics

Doping profile for strained source/drain region

Method of forming semiconductor device

Interfacial layer between fin and source/drain region

FETS and methods of forming FETS

Semiconductor device and method for manufacture

Epitaxy regions with large landing areas for contact plugs

FETs and methods of forming FETs

Method for manufacturing semiconductor structure with enlarged volu...

Source/drain structure for semiconductor device

Method for manufacturing semiconductor structure with reduced nodul...

Interfacial layer between Fin and source/drain region

Supportive layer in source/drains of FinFET devices

Patents Applicationslast 30 patents

LOW-RESISTANCE SOURCE/DRAIN FEATURES

SOURCE/DRAIN STRUCTURES WITH VOID FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICES WITH A SOURCE/DRAIN BARRIER LAYER AND METHODS...

METHOD AND CHEMICAL VAPOR DEPOSITION APPARATUS FOR MANUFACTURING SE...

DIFFUSION BARRIER STRUCTURES IN SOURCE/DRAIN STRUCTURES OF NANOSTRU...

SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...

SOURCE/DRAIN STRUCTURE DOPANT CLUSTER DESIGN

LOW GE ISOLATED EPITAXIAL LAYER GROWTH OVER NANO-SHEET ARCHITECTURE...

SEMICONDUCTOR DEVICES WITH EPITAXIAL SOURCE/DRAIN REGION WITH A BOT...

SEMICONDUCTOR DEVICES WITH EPITAXIAL SOURCE/DRAIN REGION WITH A BOT...

FURNACE INNER TUBE FOR PROCESS UNIFORMITY

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES AND MANUFACTURING ME...

FETS and Methods of Forming FETS

Semiconductor Device Having FIN Structure and Method of Forming The...

SOURCE/DRAIN REGIONS OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING...

Source/Drain Regions and Methods of Forming Same

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN

EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS

Semiconductor Device and Method of Manufacture

SEMICONDUCTOR DEVICE

NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES

SEMICONDUCTOR DEVICE AND METHOD

METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE