Chin-An Chang

Person

Peekskill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Variable voltage, variable impedance CMOS off-chip driver and recei...
- Patent number 6,060,905
- Issue date May 9, 2000
- International Business Machines Corporation
- Harry Randall Bickford
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Palladium enhanced soldering and bonding of semiconductor device co...
- Patent number 5,225,711
- Issue date Jul 6, 1993
- International Business Machines Corporation
- Chin-An Chang
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Metal-metal epitaxy on substrates and method of making
- Patent number 5,112,699
- Issue date May 12, 1992
- International Business Machines Corporation
- Chin-An Chang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Palladium enhanced fluxless soldering and bonding of semiconductor...
- Patent number 5,048,744
- Issue date Sep 17, 1991
- International Business Machines Corporation
- Chin-An Chang
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Field effect transistor
- Patent number 4,743,951
- Issue date May 10, 1988
- International Business Machines Corporation
- Chin-An Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MBE Growth technique for matching superlattices grown on GaAs subst...
- Patent number 4,558,336
- Issue date Dec 10, 1985
- The United States of America as represented by the Secretary of the Army
- Chin-An Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET With heterojunction induced channel
- Patent number 4,538,165
- Issue date Aug 27, 1985
- International Business Machines Corporation
- Chin-An Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MBE growth technique for matching superlattices grown on GaAs subst...
- Patent number 4,517,047
- Issue date May 14, 1985
- The United States of America as represented by the Secretary of the Army
- Chin-An Chang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heterojunction transistor
- Patent number 4,395,722
- Issue date Jul 26, 1983
- The United States of America as represented by the Secretary of the Army
- Leo Esaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InAs-GaSb Tunnel diode
- Patent number 4,371,884
- Issue date Feb 1, 1983
- The United States of America as represented by the Secretary of the Army
- Leo Esaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for reducing the interdiffusion of conductors and/or semico...
- Patent number 4,282,043
- Issue date Aug 4, 1981
- International Business Machines Corporation
- Chin-An Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Molecular-beam epitaxy system and method including hydrogen treatment
- Patent number 4,239,584
- Issue date Dec 16, 1980
- International Business Machines Corporation
- Chin-An Chang
- C30 - CRYSTAL GROWTH

Chin-An Chang

Person

Patents Grantslast 30 patents

Variable voltage, variable impedance CMOS off-chip driver and recei...

Palladium enhanced soldering and bonding of semiconductor device co...

Metal-metal epitaxy on substrates and method of making

Palladium enhanced fluxless soldering and bonding of semiconductor...

Field effect transistor

MBE Growth technique for matching superlattices grown on GaAs subst...

FET With heterojunction induced channel

MBE growth technique for matching superlattices grown on GaAs subst...

Heterojunction transistor

InAs-GaSb Tunnel diode

Process for reducing the interdiffusion of conductors and/or semico...

Molecular-beam epitaxy system and method including hydrogen treatment