Claims
- 1. A multilayer semiconductor device whereby lattice mismatch between first and second layers is overcome, comprising the improvement of:
- a plurality of successive intermediate semiconductor layers between said first and second layers, said intermediate layers being of predetermined thicknesses and having respective compositions which vary in discrete graded steps of semiconductor composition from a composition which substantially matches the lattice parameters of the first layer to a composition which substantially matches the lattice parameters of the second layer.
- 2. The semiconductor device as defined by claim 1 wherein said first layer comprises a substrate of GaAs and said second layer comprises one layer of a superlattice.
- 3. The semiconductor device as defined by claim 2 wherein said superlattice comprises an InAs-GaSb superlattice.
- 4. The semiconductor device as defined by claim 1 wherein said superlattice comprises an In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y superlattice.
Parent Case Info
This application is a division of application Ser. No. 227,889, filed Jan. 23, 1981.
Government Interests
The invention described herein may be manufactured and used by or for the Government for governmental purposes without the payment of any royalties thereon or therefor.
US Referenced Citations (4)
Non-Patent Literature Citations (1)
Entry |
Chang et al., Appl. Phys. Lett., vol. 31, No. 11, Dec. 1, 1977, pp. 759 et.eq. |