Chin-Yu Tsai

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Extended drain MOS with dual well isolation
- Patent number 11,387,323
- Issue date Jul 12, 2022
- Texas Instruments Incorporated
- Chin-yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended drain MOS with dual well isolation
- Patent number 10,756,187
- Issue date Aug 25, 2020
- Texas Instruments Incorporated
- Chin-yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel DEMOS device
- Patent number 10,505,037
- Issue date Dec 10, 2019
- Texas Instruments Incorporated
- Chin-Yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel DEMOS device
- Patent number 9,947,783
- Issue date Apr 17, 2018
- Texas Instruments Incorporated
- Chin-Yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel demos device
- Patent number 9,608,109
- Issue date Mar 28, 2017
- Texas Instruments Incorporated
- Chin-Yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with improved isolation structures
- Patent number 6,806,541
- Issue date Oct 19, 2004
- Texas Instruments Incorporated
- Lily X. Springer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS photodiode having reduced dark current and improved light sens...
- Patent number 6,753,202
- Issue date Jun 22, 2004
- Texas Instruments Incorporated
- Zhiliang J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with improved isolation structures
- Patent number 6,730,569
- Issue date May 4, 2004
- Texas Instruments Incorporated
- Lily X. Springer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices for optimized digital and analog CMOS transisto...
- Patent number 6,680,226
- Issue date Jan 20, 2004
- Texas Instruments Incorporated
- Taylor R. Efland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS photodiode having reduced dark current and improved light sens...
- Patent number 6,621,064
- Issue date Sep 16, 2003
- Texas Instruments Incorporated
- Zhiliang J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Higher voltage transistors for sub micron CMOS processes
- Patent number 6,548,874
- Issue date Apr 15, 2003
- Texas Instruments Incorporated
- Alec Morton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated CMOS structure for gate-controlled buried photodiode
- Patent number 6,512,280
- Issue date Jan 28, 2003
- Texas Instruments Incorporated
- Zhiliang J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices for optimized digital and analog CMOS transisto...
- Patent number 6,468,849
- Issue date Oct 22, 2002
- Texas Instruments Incorporated
- Taylor R. Efland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double diffused metal oxide semiconductor device
- Patent number 6,441,431
- Issue date Aug 27, 2002
- Texas Instruments Incorporated
- Taylor Efland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
METHOD TO PARTIALLY OR COMPLETELY SUPPRESS POCKET IMPLANT IN SELECT...
- Patent number 6,413,824
- Issue date Jul 2, 2002
- Texas Instruments Incorporated
- Amitava Chatterjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated structure for reduced leakage and improved fill-factor i...
- Patent number 6,392,263
- Issue date May 21, 2002
- Texas Instruments Incorporated
- Zhiliang J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit diode, and method for fabricating same
- Patent number 6,274,918
- Issue date Aug 14, 2001
- Texas Instruments Incorporated
- Chin-Yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated SCR-LDMOS power device
- Patent number 6,137,140
- Issue date Oct 24, 2000
- Texas Instruments Incorporated
- Taylor Rice Efland
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EXTENDED DRAIN MOS WITH DUAL WELL ISOLATION
- Publication number 20200350405
- Publication date Nov 5, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Chin-yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-CHANNEL DEMOS DEVICE
- Publication number 20180197986
- Publication date Jul 12, 2018
- TEXAS INSTRUMENTS INCORPORATED
- CHIN-YU TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-CHANNEL DEMOS DEVICE
- Publication number 20170309744
- Publication date Oct 26, 2017
- TEXAS INSTRUMENTS INCORPORATED
- CHIN-YU TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with improved isolation structures
- Publication number 20040169253
- Publication date Sep 2, 2004
- Lily X. Springer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS photodiode having reduced dark current and improved light sens...
- Publication number 20030230704
- Publication date Dec 18, 2003
- Zhiliang J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Higher voltage transistors for sub micron CMOS processes
- Publication number 20030127694
- Publication date Jul 10, 2003
- Alec Morton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and devices for optimized digital and analog CMOS transisto...
- Publication number 20030032231
- Publication date Feb 13, 2003
- Taylor R. Efland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated CMOS structure for gate-controlled buried photodiode
- Publication number 20020171097
- Publication date Nov 21, 2002
- Zhiliang J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS photodiode having reduced dark current and improved light sens...
- Publication number 20020162945
- Publication date Nov 7, 2002
- Zhiliang J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel lateral double diffused metal oxide semiconductor device
- Publication number 20020079509
- Publication date Jun 27, 2002
- Taylor Efland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with improved isolation structures
- Publication number 20020074610
- Publication date Jun 20, 2002
- Lily X. Springer
- H01 - BASIC ELECTRIC ELEMENTS

Chin-Yu Tsai

Person

Patents Grantslast 30 patents

Extended drain MOS with dual well isolation

Extended drain MOS with dual well isolation

P-channel DEMOS device

P-channel DEMOS device

N-channel demos device

Field effect transistor with improved isolation structures

CMOS photodiode having reduced dark current and improved light sens...

Field effect transistor with improved isolation structures

Methods and devices for optimized digital and analog CMOS transisto...

CMOS photodiode having reduced dark current and improved light sens...

Higher voltage transistors for sub micron CMOS processes

Integrated CMOS structure for gate-controlled buried photodiode

Methods and devices for optimized digital and analog CMOS transisto...

Lateral double diffused metal oxide semiconductor device

METHOD TO PARTIALLY OR COMPLETELY SUPPRESS POCKET IMPLANT IN SELECT...

Integrated structure for reduced leakage and improved fill-factor i...

Integrated circuit diode, and method for fabricating same

Integrated SCR-LDMOS power device

Patents Applicationslast 30 patents

EXTENDED DRAIN MOS WITH DUAL WELL ISOLATION

P-CHANNEL DEMOS DEVICE

P-CHANNEL DEMOS DEVICE

Field effect transistor with improved isolation structures

CMOS photodiode having reduced dark current and improved light sens...

Higher voltage transistors for sub micron CMOS processes

Methods and devices for optimized digital and analog CMOS transisto...

Integrated CMOS structure for gate-controlled buried photodiode

CMOS photodiode having reduced dark current and improved light sens...

Novel lateral double diffused metal oxide semiconductor device

Field effect transistor with improved isolation structures