Chock Hing Gan

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating T-shaped recessed polysilicon gate transistors
- Patent number 6,531,380
- Issue date Mar 11, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning gate electrode with ultra-thin gate dielectric
- Patent number 6,475,916
- Issue date Nov 5, 2002
- Chartered Semiconductor Manufacturing Ltd.
- James Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating T-shaped recessed polysilicon gate transistors
- Patent number 6,309,933
- Issue date Oct 30, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alignment mark scheme for Sti process to save one mask step
- Patent number 6,303,458
- Issue date Oct 16, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Yunqiang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to avoid dishing in forming trenches for shallow trench isol...
- Patent number 6,165,869
- Issue date Dec 26, 2000
- Chartered Semiconductor Manufacturing, Ltd.
- Gang Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form shallow trench isolation structures with improved is...
- Patent number 6,027,982
- Issue date Feb 22, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creation of a self-aligned, ion implanted channel region, after sou...
- Patent number 5,856,225
- Issue date Jan 5, 1999
- Chartered Semiconductor Manufacturing Ltd.
- Teck Koon Lee
- H01 - BASIC ELECTRIC ELEMENTS

Chock Hing Gan

Person

Patents Grantslast 30 patents

Method of fabricating T-shaped recessed polysilicon gate transistors

Method of patterning gate electrode with ultra-thin gate dielectric

Method of fabricating T-shaped recessed polysilicon gate transistors

Alignment mark scheme for Sti process to save one mask step

Method to avoid dishing in forming trenches for shallow trench isol...

Method to form shallow trench isolation structures with improved is...

Creation of a self-aligned, ion implanted channel region, after sou...