Choh Fei Yeap

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned quadruple patterning process for Fin pitch below 20nm
- Patent number 10,559,501
- Issue date Feb 11, 2020
- QUALCOMM Incorporated
- Stanley Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits including a FinFET and a nanostructure FET
- Patent number 10,439,039
- Issue date Oct 8, 2019
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned vertical interconnect accesses (VIAs) in inter...
- Patent number 10,354,912
- Issue date Jul 16, 2019
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an airgap defined at least partially by...
- Patent number 10,163,792
- Issue date Dec 25, 2018
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire device with reduced parasitics
- Patent number 10,157,992
- Issue date Dec 18, 2018
- QUALCOMM Incorporated
- Mustafa Badaroglu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal layers for a three-port bit cell
- Patent number 10,141,317
- Issue date Nov 27, 2018
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked nanowire field effect transistors
- Patent number 10,043,796
- Issue date Aug 7, 2018
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seven-transistor static random-access memory bitcell with reduced r...
- Patent number 10,037,795
- Issue date Jul 31, 2018
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanowire channel structures of continuously stacked nanowires for c...
- Patent number 10,032,678
- Issue date Jul 24, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable interconnect pitch for improved performance
- Patent number 9,984,029
- Issue date May 29, 2018
- QUALCOMM Incorporated
- Kern Rim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Contact wrap around structure
- Patent number 9,953,979
- Issue date Apr 24, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse self aligned double patterning process for back end of line...
- Patent number 9,941,154
- Issue date Apr 10, 2018
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods to reduce parasitic capacitance
- Patent number 9,941,156
- Issue date Apr 10, 2018
- QUALCOMM Incorporated
- Shiqun Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus of multi threshold voltage CMOS
- Patent number 9,922,880
- Issue date Mar 20, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory (SRAM) bit cells with wordline landing...
- Patent number 9,876,017
- Issue date Jan 23, 2018
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having a gap defined therein
- Patent number 9,871,121
- Issue date Jan 16, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having reduced dimensions between components
- Patent number 9,859,210
- Issue date Jan 2, 2018
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjacent device isolation
- Patent number 9,824,936
- Issue date Nov 21, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal-insulator-metal capacitor over conductive layer
- Patent number 9,818,817
- Issue date Nov 14, 2017
- QUALCOMM Incorporated
- John J. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random-access memory (SRAM) sensor for bias temperature inst...
- Patent number 9,812,188
- Issue date Nov 7, 2017
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- G11 - INFORMATION STORAGE
Information Patent Grant
Static random access memory (SRAM) bit cells with wordlines on sepa...
- Patent number 9,806,083
- Issue date Oct 31, 2017
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned structure
- Patent number 9,799,560
- Issue date Oct 24, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal cut and via for back-end-of-line (BEOL) processe...
- Patent number 9,793,164
- Issue date Oct 17, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device with adaptive voltage scaling based on error information
- Patent number 9,786,356
- Issue date Oct 10, 2017
- QUALCOMM Incorporated
- Zhongze Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit devices and methods
- Patent number 9,721,891
- Issue date Aug 1, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merging lithography processes for gate patterning
- Patent number 9,691,868
- Issue date Jun 27, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Reduced height M1 metal lines for local on-chip routing
- Patent number 9,666,481
- Issue date May 30, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage scaling for holistic energy management
- Patent number 9,660,649
- Issue date May 23, 2017
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for asymmetrical geometrical scaling
- Patent number 9,594,864
- Issue date Mar 14, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
SRAM read preferred bit cell with write assist circuit
- Patent number 9,583,178
- Issue date Feb 28, 2017
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm
- Publication number 20200161189
- Publication date May 21, 2020
- QUALCOMM Incorporated
- Stanley SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW...
- Publication number 20180082906
- Publication date Mar 22, 2018
- QUALCOMM Incorporated
- Stanley SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING A FINFET AND A NANOSTRUCTURE FET
- Publication number 20170278842
- Publication date Sep 28, 2017
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SELF-ALIGNED VERTICAL INTERCONNECT ACCESSES (VIAs) IN INTER...
- Publication number 20170271202
- Publication date Sep 21, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS
- Publication number 20170221884
- Publication date Aug 3, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...
- Publication number 20170207313
- Publication date Jul 20, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE DEVICE WITH REDUCED PARASITICS
- Publication number 20170186846
- Publication date Jun 29, 2017
- QUALCOMM Incorporated
- Mustafa Badaroglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...
- Publication number 20170170268
- Publication date Jun 15, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED METAL CUT AND VIA FOR BACK-END-OF-LINE (BEOL) PROCESSE...
- Publication number 20170140986
- Publication date May 18, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED NANOWIRES FOR C...
- Publication number 20170110374
- Publication date Apr 20, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED HETEROGENEOUS N...
- Publication number 20170110541
- Publication date Apr 20, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE SELF ALIGNED DOUBLE PATTERNING PROCESS FOR BACK END OF LINE...
- Publication number 20170110364
- Publication date Apr 20, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR SOURCE-DRAIN JUNCTION FORMATION IN A FINFE...
- Publication number 20170104088
- Publication date Apr 13, 2017
- QUALCOMM Incorporated
- Vladimir MACHKAOUTSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND METHODS
- Publication number 20170092587
- Publication date Mar 30, 2017
- Qualcomm Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CELL TRANSISTOR DEVICE AND METHOD OF MAKING SAME WITH CUT POL...
- Publication number 20170077090
- Publication date Mar 16, 2017
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL LAYERS FOR A THREE-PORT BIT CELL
- Publication number 20170062439
- Publication date Mar 2, 2017
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- G11 - INFORMATION STORAGE
Information Patent Application
ADJACENT DEVICE ISOLATION
- Publication number 20170033020
- Publication date Feb 2, 2017
- QUALCOMM Incorporated
- Vladimir MACHKAOUTSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING REDUCED DIMENSIONS BETWEEN COMPONENTS
- Publication number 20160372414
- Publication date Dec 22, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FINS FROM DIFFERENT MATERIALS ON A SUBSTRATE
- Publication number 20160322391
- Publication date Nov 3, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ASYMMETRICAL GEOMETRICAL SCALING
- Publication number 20160314235
- Publication date Oct 27, 2016
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELF-ALIGNED STRUCTURE
- Publication number 20160293485
- Publication date Oct 6, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS TO REDUCE PARASITIC CAPACITANCE
- Publication number 20160293475
- Publication date Oct 6, 2016
- QUALCOMM Incorporated
- Shiqun Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ANALOG AND RADIO FREQUENCY PERFORMANCE MODIFICATION
- Publication number 20160284595
- Publication date Sep 29, 2016
- QUALCOMM Incorporated
- Chunqi GENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJACENT DEVICE ISOLATION
- Publication number 20160254261
- Publication date Sep 1, 2016
- QUALCOMM Incorporated
- Vladimir MACHKAOUTSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM-ACCESS MEMORY (SRAM) SENSOR
- Publication number 20160247554
- Publication date Aug 25, 2016
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRON-BEAM (E-BEAM) BASED SEMICONDUCTOR DEVICE FEATURES
- Publication number 20160247714
- Publication date Aug 25, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
REDUCED HEIGHT M1 METAL LINES FOR LOCAL ON-CHIP ROUTING
- Publication number 20160240437
- Publication date Aug 18, 2016
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL LAYERS FOR A THREE-PORT BIT CELL
- Publication number 20160240539
- Publication date Aug 18, 2016
- QUALCOMM Incorporated
- Niladri Narayan Mojumder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE CONDUCTIVE BARRIER LAYER FORMATION
- Publication number 20160233126
- Publication date Aug 11, 2016
- QUALCOMM Incorporated
- Jeffrey Junhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING MULTIPLE VIA CONNECTORS AND A M...
- Publication number 20160233159
- Publication date Aug 11, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS

Choh Fei Yeap

Person

Patents Grantslast 30 patents

Self-aligned quadruple patterning process for Fin pitch below 20nm

Integrated circuits including a FinFET and a nanostructure FET

Forming self-aligned vertical interconnect accesses (VIAs) in inter...

Semiconductor device having an airgap defined at least partially by...

Nanowire device with reduced parasitics

Metal layers for a three-port bit cell

Vertically stacked nanowire field effect transistors

Seven-transistor static random-access memory bitcell with reduced r...

Nanowire channel structures of continuously stacked nanowires for c...

Variable interconnect pitch for improved performance

Contact wrap around structure

Reverse self aligned double patterning process for back end of line...

Systems and methods to reduce parasitic capacitance

Method and apparatus of multi threshold voltage CMOS

Static random access memory (SRAM) bit cells with wordline landing...

Semiconductor device having a gap defined therein

Integrated circuits having reduced dimensions between components

Adjacent device isolation

Metal-insulator-metal capacitor over conductive layer

Static random-access memory (SRAM) sensor for bias temperature inst...

Static random access memory (SRAM) bit cells with wordlines on sepa...

Self-aligned structure

Self-aligned metal cut and via for back-end-of-line (BEOL) processe...

Memory device with adaptive voltage scaling based on error information

Integrated circuit devices and methods

Merging lithography processes for gate patterning

Reduced height M1 metal lines for local on-chip routing

Voltage scaling for holistic energy management

Method for asymmetrical geometrical scaling

SRAM read preferred bit cell with write assist circuit

Patents Applicationslast 30 patents

SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm

NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW...

INTEGRATED CIRCUITS INCLUDING A FINFET AND A NANOSTRUCTURE FET

FORMING SELF-ALIGNED VERTICAL INTERCONNECT ACCESSES (VIAs) IN INTER...

VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS

NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...

NANOWIRE DEVICE WITH REDUCED PARASITICS

NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...

SELF-ALIGNED METAL CUT AND VIA FOR BACK-END-OF-LINE (BEOL) PROCESSE...

NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED NANOWIRES FOR C...

NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED HETEROGENEOUS N...

REVERSE SELF ALIGNED DOUBLE PATTERNING PROCESS FOR BACK END OF LINE...

METHOD AND APPARATUS FOR SOURCE-DRAIN JUNCTION FORMATION IN A FINFE...

INTEGRATED CIRCUIT DEVICES AND METHODS

MULTI-CELL TRANSISTOR DEVICE AND METHOD OF MAKING SAME WITH CUT POL...

METAL LAYERS FOR A THREE-PORT BIT CELL

ADJACENT DEVICE ISOLATION

INTEGRATED CIRCUITS HAVING REDUCED DIMENSIONS BETWEEN COMPONENTS

METHOD OF FORMING FINS FROM DIFFERENT MATERIALS ON A SUBSTRATE

METHOD FOR ASYMMETRICAL GEOMETRICAL SCALING

SELF-ALIGNED STRUCTURE

SYSTEMS AND METHODS TO REDUCE PARASITIC CAPACITANCE

SELECTIVE ANALOG AND RADIO FREQUENCY PERFORMANCE MODIFICATION

ADJACENT DEVICE ISOLATION

STATIC RANDOM-ACCESS MEMORY (SRAM) SENSOR

ELECTRON-BEAM (E-BEAM) BASED SEMICONDUCTOR DEVICE FEATURES

REDUCED HEIGHT M1 METAL LINES FOR LOCAL ON-CHIP ROUTING

METAL LAYERS FOR A THREE-PORT BIT CELL

SELECTIVE CONDUCTIVE BARRIER LAYER FORMATION

INTEGRATED CIRCUIT DEVICE INCLUDING MULTIPLE VIA CONNECTORS AND A M...