Christine Thero

Person

Scottsdale, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating vertical FET with Schottky diode
- Patent number 5,956,578
- Issue date Sep 21, 1999
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices and the devices
- Patent number 5,895,260
- Issue date Apr 20, 1999
- Motorola, Inc.
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gate, vertical drift region transistor
- Patent number 5,877,047
- Issue date Mar 2, 1999
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating buried control elements in semiconductor devices
- Patent number 5,700,703
- Issue date Dec 23, 1997
- Motorola
- Jenn-Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MESFET having a termination layer in the channel layer
- Patent number 5,693,969
- Issue date Dec 2, 1997
- Motorola
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices and the devices
- Patent number 5,612,232
- Issue date Mar 18, 1997
- Motorola
- Christine Thero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching silicon carbide
- Patent number 5,571,374
- Issue date Nov 5, 1996
- Motorola
- Christine Thero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage silicon carbide transistor
- Patent number 5,569,937
- Issue date Oct 29, 1996
- Motorola
- Mohit Bhatnagar
- H01 - BASIC ELECTRIC ELEMENTS

Christine Thero

Person

Patents Grantslast 30 patents

Method of fabricating vertical FET with Schottky diode

Method of fabricating semiconductor devices and the devices

Lateral gate, vertical drift region transistor

Method of fabricating buried control elements in semiconductor devices

MESFET having a termination layer in the channel layer

Method of fabricating semiconductor devices and the devices

Method of etching silicon carbide

High breakdown voltage silicon carbide transistor