Chuang-Han Hsieh

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming air gap between gate dielectric layer and spacer
- Patent number 12,107,121
- Issue date Oct 1, 2024
- United Microelectronics Corp.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,764,174
- Issue date Sep 19, 2023
- United Microelectronics Corp.
- Chun-Chi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating method of fin structure with tensile stress and complem...
- Patent number 10,629,734
- Issue date Apr 21, 2020
- United Microelectronics Corp.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating method of fin structure with tensile stress and complem...
- Patent number 10,229,995
- Issue date Mar 12, 2019
- United Microelectronics Corp.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING AIR GAP BETWEEN GATE DIELECTRIC LAYER AND SPACER
- Publication number 20240413199
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240413200
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240047554
- Publication date Feb 8, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATING METHOD OF THE SAME
- Publication number 20240021702
- Publication date Jan 18, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD T...
- Publication number 20230402537
- Publication date Dec 14, 2023
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20230136978
- Publication date May 4, 2023
- United Microelectronics Corp.
- Chun-Chi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230102936
- Publication date Mar 30, 2023
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING METHOD OF FIN STRUCTURE WITH TENSILE STRESS AND COMPLEM...
- Publication number 20190172949
- Publication date Jun 6, 2019
- UNITED MICROELECTRONICS CORP.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING METHOD OF FIN STRUCTURE WITH TENSILE STRESS AND COMPLEM...
- Publication number 20190027602
- Publication date Jan 24, 2019
- UNITED MICROELECTRONICS CORP.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING FIELD EFFECT TRANSISTOR
- Publication number 20180358453
- Publication date Dec 13, 2018
- UNITED MICROELECTRONICS CORP.
- Hung-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS

Chuang-Han Hsieh

Person

Patents Grantslast 30 patents

Method for forming air gap between gate dielectric layer and spacer

Semiconductor structure

Fabricating method of fin structure with tensile stress and complem...

Fabricating method of fin structure with tensile stress and complem...

Patents Applicationslast 30 patents

METHOD FOR FORMING AIR GAP BETWEEN GATE DIELECTRIC LAYER AND SPACER

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATING METHOD OF THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD T...

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FABRICATING METHOD OF FIN STRUCTURE WITH TENSILE STRESS AND COMPLEM...

FABRICATING METHOD OF FIN STRUCTURE WITH TENSILE STRESS AND COMPLEM...

TUNNELING FIELD EFFECT TRANSISTOR