Chun-Fai CHENG

Person

Tin Shui Wai, HK

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure and method for forming the semicondu...
- Patent number 12,176,390
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric preserving gate cut process
- Patent number 11,876,013
- Issue date Jan 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Yuan Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 11,854,906
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained structure of a semiconductor device
- Patent number 11,329,159
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric preserving gate cut process
- Patent number 11,152,250
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Yuan Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric preserving gate cut process
- Patent number 11,145,536
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Yuan Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 11,107,736
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cutting metal gates in fin field effect transistors
- Patent number 10,872,897
- Issue date Dec 22, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained structure of a semiconductor device
- Patent number 10,727,340
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric preserving gate cut process
- Patent number 10,699,940
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Yuan Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cutting metal gates in fin field effect transistors
- Patent number 10,658,372
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cutting metal gates in fin field effect transistors
- Patent number 10,424,588
- Issue date Sep 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 9,847,225
- Issue date Dec 19, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,799,750
- Issue date Oct 24, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained structure of a p-type field effect transistor
- Patent number 9,698,054
- Issue date Jul 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing strained source/drain structures
- Patent number 9,698,057
- Issue date Jul 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques providing high-k dielectric metal gate CMOS
- Patent number 9,431,404
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with well controlled surface proximity an...
- Patent number 9,349,831
- Issue date May 24, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance strained source-drain structure and method of fabr...
- Patent number 9,293,537
- Issue date Mar 22, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques providing high-k dielectric metal gate CMOS
- Patent number 9,099,346
- Issue date Aug 4, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing strained source/drain structures
- Patent number 9,048,253
- Issue date Jun 2, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with well controlled surface proximity an...
- Patent number 8,900,960
- Issue date Dec 2, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-channel semiconductor device fabrication
- Patent number 8,872,228
- Issue date Oct 28, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing strained source/drain structures
- Patent number 8,642,417
- Issue date Feb 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing strained source/drain structures
- Patent number 8,569,139
- Issue date Oct 29, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,482,079
- Issue date Jul 9, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-strained source/drain structures
- Patent number 8,405,160
- Issue date Mar 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Gate Structures For Semiconductor Devices
- Publication number 20240071835
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230268390
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Dielectric Preserving Gate Cut Process
- Publication number 20220037196
- Publication date Feb 3, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Shu-Yuan Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED STRUCTURE OF A SEMICONDUCTOR DEVICE
- Publication number 20200403098
- Publication date Dec 24, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Dielectric Preserving Gate Cut Process
- Publication number 20200328106
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Shu-Yuan Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cutting Metal Gates in Fin Field Effect Transistors
- Publication number 20200279854
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Dielectric Preserving Gate Cut Process
- Publication number 20200111700
- Publication date Apr 9, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Shu-Yuan Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cutting Metal Gates in Fin Field Effect Transistors
- Publication number 20200020701
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Dielectric Preserving Gate Cut Process
- Publication number 20190157135
- Publication date May 23, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Shu-Yuan Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cutting Metal Gates in Fin Field Effect Transistors
- Publication number 20190139969
- Publication date May 9, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED STRUCTURE OF A SEMICONDUCTOR DEVICE
- Publication number 20170301794
- Publication date Oct 19, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques Providing High-K Dielectric Metal Gate CMOS
- Publication number 20150333076
- Publication date Nov 19, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Strained Source/Drain Structures
- Publication number 20150262886
- Publication date Sep 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng NIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Performance Strained Source-Drain Structure and Method of Fabr...
- Publication number 20140319581
- Publication date Oct 30, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...
- Publication number 20140106522
- Publication date Apr 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques Providing High-K Dielectric Metal Gate CMOS
- Publication number 20140027843
- Publication date Jan 30, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Strained Source/Drain Structures
- Publication number 20140024188
- Publication date Jan 23, 2014
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Fabrication Method Thereof
- Publication number 20140021517
- Publication date Jan 23, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED-CHANNEL SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20130299910
- Publication date Nov 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING STRAINED SOURCE/DRAIN STRUCTURES
- Publication number 20130280875
- Publication date Oct 24, 2013
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130119444
- Publication date May 16, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120319203
- Publication date Dec 20, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING STRAINED SOURCE/DRAIN STRUCTURES
- Publication number 20120108026
- Publication date May 3, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng NIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED STRUCTURE OF A P-TYPE FIELD EFFECT TRANSISTOR
- Publication number 20120091540
- Publication date Apr 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STRAINED SOURCE/DRAIN STRUCTURES
- Publication number 20110291201
- Publication date Dec 1, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Chun-Fai CHENG

Person

Patents Grantslast 30 patents

Semiconductor device structure and method for forming the semicondu...

Gate dielectric preserving gate cut process

Gate structures for semiconductor devices

Strained structure of a semiconductor device

Gate dielectric preserving gate cut process

Gate dielectric preserving gate cut process

Gate structures for semiconductor devices

Cutting metal gates in fin field effect transistors

Strained structure of a semiconductor device

Gate dielectric preserving gate cut process

Cutting metal gates in fin field effect transistors

Cutting metal gates in fin field effect transistors

Semiconductor device and method of manufacturing the same

Semiconductor device and fabrication method thereof

Strained structure of a p-type field effect transistor

Method of manufacturing strained source/drain structures

Techniques providing high-k dielectric metal gate CMOS

Integrated circuit device with well controlled surface proximity an...

High performance strained source-drain structure and method of fabr...

Techniques providing high-k dielectric metal gate CMOS

Method of manufacturing strained source/drain structures

Integrated circuit device with well controlled surface proximity an...

Strained-channel semiconductor device fabrication

Method of manufacturing strained source/drain structures

Method of manufacturing strained source/drain structures

Semiconductor device and method of manufacturing the same

Multi-strained source/drain structures

Patents Applicationslast 30 patents

Gate Structures For Semiconductor Devices

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Gate Dielectric Preserving Gate Cut Process

STRAINED STRUCTURE OF A SEMICONDUCTOR DEVICE

Gate Dielectric Preserving Gate Cut Process

Cutting Metal Gates in Fin Field Effect Transistors

Gate Dielectric Preserving Gate Cut Process

Cutting Metal Gates in Fin Field Effect Transistors

Gate Dielectric Preserving Gate Cut Process

Cutting Metal Gates in Fin Field Effect Transistors

STRAINED STRUCTURE OF A SEMICONDUCTOR DEVICE

Techniques Providing High-K Dielectric Metal Gate CMOS

Method of Manufacturing Strained Source/Drain Structures

High Performance Strained Source-Drain Structure and Method of Fabr...

INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AN...

Techniques Providing High-K Dielectric Metal Gate CMOS

Method of Manufacturing Strained Source/Drain Structures

Semiconductor Device and Fabrication Method Thereof

STRAINED-CHANNEL SEMICONDUCTOR DEVICE FABRICATION

METHOD OF MANUFACTURING STRAINED SOURCE/DRAIN STRUCTURES

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING STRAINED SOURCE/DRAIN STRUCTURES

STRAINED STRUCTURE OF A P-TYPE FIELD EFFECT TRANSISTOR

MULTI-STRAINED SOURCE/DRAIN STRUCTURES