Chung-Hu Ge

Person

Hsintien City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation structure for strained channel transistors
- Patent number 8,569,146
- Issue date Oct 29, 2013
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a strained region and a method of fa...
- Patent number 7,495,267
- Issue date Feb 24, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide/semiconductor structure and method of fabrication
- Patent number 7,453,133
- Issue date Nov 18, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon MOS devices
- Patent number 7,342,289
- Issue date Mar 11, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset spacer formation for strained channel CMOS transistor
- Patent number 7,321,155
- Issue date Jan 22, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon structure
- Patent number 7,208,754
- Issue date Apr 24, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hu Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure resistor and method of forming the same
- Patent number 7,183,593
- Issue date Feb 27, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a strained region and a method of fa...
- Patent number 7,045,836
- Issue date May 16, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel on insulator device
- Patent number 7,029,994
- Issue date Apr 18, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hu Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device
- Patent number 7,022,561
- Issue date Apr 4, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure with nitrogen-containing liner and methods of m...
- Patent number 6,974,755
- Issue date Dec 13, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon layer semiconductor product employing strained ins...
- Patent number 6,924,181
- Issue date Aug 2, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon structure
- Patent number 6,902,965
- Issue date Jun 7, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hu Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel on insulator device
- Patent number 6,900,502
- Issue date May 31, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hu Ge
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ISOLATION STRUCTURE FOR STRAINED CHANNEL TRANSISTORS
- Publication number 20110117724
- Publication date May 19, 2011
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Hsin KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation structure for strained channel transistors
- Publication number 20070161206
- Publication date Jul 12, 2007
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING RELIABLE SEMICONDUCTOR STRUCTURE
- Publication number 20070099402
- Publication date May 3, 2007
- Taiwan Semiconductor Manufacturing Co., LTD
- Horng-Huei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel CMOS device
- Publication number 20060138557
- Publication date Jun 29, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation structure for strained channel transistors
- Publication number 20050285140
- Publication date Dec 29, 2005
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Offset spacer formation for strained channel CMOS transistor
- Publication number 20050247986
- Publication date Nov 10, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reliable semiconductor structure and method for fabricating
- Publication number 20050236616
- Publication date Oct 27, 2005
- Horng-Huei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary field-effect transistors and methods of manufacture
- Publication number 20050116360
- Publication date Jun 2, 2005
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SILICON STRUCTURE
- Publication number 20050093018
- Publication date May 5, 2005
- Chung-Hu Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide/semiconductor structure and method of fabrication
- Publication number 20050045969
- Publication date Mar 3, 2005
- Wen-Chin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation structure with nitrogen-containing liner and methods of m...
- Publication number 20050035426
- Publication date Feb 17, 2005
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained silicon MOS devices
- Publication number 20050032321
- Publication date Feb 10, 2005
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure having a strained region and a method of fa...
- Publication number 20050023576
- Publication date Feb 3, 2005
- Wen-Chin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained channel on insulator device
- Publication number 20040195623
- Publication date Oct 7, 2004
- Chung-Hu Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained silicon layer semiconductor product employing strained ins...
- Publication number 20040159834
- Publication date Aug 19, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel CMOS device
- Publication number 20040104405
- Publication date Jun 3, 2004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS

Chung-Hu Ge

Person

Patents Grantslast 30 patents

Isolation structure for strained channel transistors

Semiconductor structure having a strained region and a method of fa...

Silicide/semiconductor structure and method of fabrication

Strained silicon MOS devices

Offset spacer formation for strained channel CMOS transistor

Strained silicon structure

Heterostructure resistor and method of forming the same

Semiconductor structure having a strained region and a method of fa...

Strained channel on insulator device

CMOS device

Isolation structure with nitrogen-containing liner and methods of m...

Strained silicon layer semiconductor product employing strained ins...

Strained silicon structure

Strained channel on insulator device

Patents Applicationslast 30 patents

ISOLATION STRUCTURE FOR STRAINED CHANNEL TRANSISTORS

Isolation structure for strained channel transistors

METHOD FOR FABRICATING RELIABLE SEMICONDUCTOR STRUCTURE

Novel CMOS device

Isolation structure for strained channel transistors

Offset spacer formation for strained channel CMOS transistor

Reliable semiconductor structure and method for fabricating

Complementary field-effect transistors and methods of manufacture

STRAINED SILICON STRUCTURE

Silicide/semiconductor structure and method of fabrication

Isolation structure with nitrogen-containing liner and methods of m...

Strained silicon MOS devices

Semiconductor structure having a strained region and a method of fa...

Strained channel on insulator device

Strained silicon layer semiconductor product employing strained ins...

Novel CMOS device