Chunlan Mo

Person

Nanchang, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating InGaN-based multi-quantum well layers
- Patent number 8,461,029
- Issue date Jun 11, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a p-type semiconductor structure
- Patent number 8,431,936
- Issue date Apr 30, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a low-resistivity ohmic contact to a p-type...
- Patent number 8,431,475
- Issue date Apr 30, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride light-emitting device with ultra-high reverse break...
- Patent number 8,053,757
- Issue date Nov 8, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication InGaAIN film and light-emitting device on a s...
- Patent number 7,888,779
- Issue date Feb 15, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS
- Publication number 20120295422
- Publication date Nov 22, 2012
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILAN...
- Publication number 20110298005
- Publication date Dec 8, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS
- Publication number 20110133158
- Publication date Jun 9, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER
- Publication number 20110133159
- Publication date Jun 9, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE LIGHT-EMITTING DEVICE WITH ULTRA-HIGH REVERSE BREAK...
- Publication number 20110006319
- Publication date Jan 13, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A LOW-RESISTIVITY OHMIC CONTACT TO A P-TYPE...
- Publication number 20100219394
- Publication date Sep 2, 2010
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A S...
- Publication number 20090050927
- Publication date Feb 26, 2009
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE
- Publication number 20080315212
- Publication date Dec 25, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for fabricating InGaN-based multi-quantum well layers

Method for fabricating a p-type semiconductor structure

Method for fabricating a low-resistivity ohmic contact to a p-type...

Gallium nitride light-emitting device with ultra-high reverse break...

Method of fabrication InGaAIN film and light-emitting device on a s...

Patents Applicationslast 30 patents

METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS

METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILAN...

METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER

GALLIUM NITRIDE LIGHT-EMITTING DEVICE WITH ULTRA-HIGH REVERSE BREAK...

METHOD FOR FABRICATING A LOW-RESISTIVITY OHMIC CONTACT TO A P-TYPE...

METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A S...

METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE