Claude Ortolland

Person

Peekskill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Virtual bulk in semiconductor on insulator technology
- Patent number 11,374,092
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with marker layer
- Patent number 11,217,685
- Issue date Jan 4, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 11,145,725
- Issue date Oct 12, 2021
- GLOBALFOUNDRIES U.S. INC.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 11,101,357
- Issue date Aug 24, 2021
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,734,492
- Issue date Aug 4, 2020
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,381,452
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,374,048
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,367,072
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned nanotube structures
- Patent number 10,170,304
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Oh-Jung Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of modulating the morphology of epitaxial semiconductor mat...
- Patent number 9,953,873
- Issue date Apr 24, 2018
- GLOBALFOUNDRIES Inc.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,922,831
- Issue date Mar 20, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a non-relaxed strained channel
- Patent number 9,871,057
- Issue date Jan 16, 2018
- GLOBALFOUNDRIES Inc.
- Karen A. Nummy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,859,122
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,837,319
- Issue date Dec 5, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,831,084
- Issue date Nov 28, 2017
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,768,071
- Issue date Sep 19, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,721,843
- Issue date Aug 1, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer for modulating Vt across devices
- Patent number 9,722,045
- Issue date Aug 1, 2017
- GLOBALFOUNDRIES Inc.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,685,379
- Issue date Jun 20, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of O-ingress into gate stack dielectric layer using oxygen...
- Patent number 9,620,384
- Issue date Apr 11, 2017
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,577,061
- Issue date Feb 21, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,570,354
- Issue date Feb 14, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,559,010
- Issue date Jan 31, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,543,213
- Issue date Jan 10, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,412,667
- Issue date Aug 9, 2016
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,373,501
- Issue date Jun 21, 2016
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon nitride layer deposited at low temperature to prevent gate...
- Patent number 9,269,786
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode with stabilized metal semiconductor alloy-semiconduc...
- Patent number 9,166,014
- Issue date Oct 20, 2015
- GLOBALFOUNDRIES, INC.
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode with stabilized metal semiconductor alloy-semiconduc...
- Patent number 9,034,749
- Issue date May 19, 2015
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY
- Publication number 20210091180
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES INC.
- John J. PEKARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20210091189
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES INC.
- Qizhi LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER
- Publication number 20210091214
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Herbert HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20200365702
- Publication date Nov 19, 2020
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20190296120
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20180076039
- Publication date Mar 15, 2018
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20180061645
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20180061646
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULATION OF THE MORPHOLOGY OF EPITAXIAL SEMICONDUCTOR MATERIAL
- Publication number 20170345719
- Publication date Nov 30, 2017
- GLOBALFOUNDRIES INC.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A NON-RELAXED STRAINED CHANNEL
- Publication number 20170256565
- Publication date Sep 7, 2017
- GLOBALFOUNDRIES INC.
- Karen A. Nummy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20170178913
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20170125542
- Publication date May 4, 2017
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES
- Publication number 20170117387
- Publication date Apr 27, 2017
- GLOBALFOUNDRIES INC.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160268390
- Publication date Sep 15, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160260618
- Publication date Sep 8, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160260638
- Publication date Sep 8, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160203987
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160203985
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160204214
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160203986
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160204209
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160149013
- Publication date May 26, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20160027640
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF O-INGRESS INTO GATE STACK DIELECTRIC LAYER USING OXYGEN...
- Publication number 20160005620
- Publication date Jan 7, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Nitride Layer Deposited at Low Temperature to Prevent Gate...
- Publication number 20150084132
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE WITH STABILIZED METAL SEMICONDUCTOR ALLOY-SEMICONDUC...
- Publication number 20140361351
- Publication date Dec 11, 2014
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE WITH STABILIZED METAL SEMICONDUCTOR ALLOY-SEMICONDUC...
- Publication number 20140363964
- Publication date Dec 11, 2014
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20140308821
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Effective Work Function Modulation by Metal Thickness and Nitrogen...
- Publication number 20130087856
- Publication date Apr 11, 2013
- International Business Machines Corporation
- Claude Ortolland
- H01 - BASIC ELECTRIC ELEMENTS

Claude Ortolland

Person

Patents Grantslast 30 patents

Virtual bulk in semiconductor on insulator technology

Heterojunction bipolar transistor with marker layer

Heterojunction bipolar transistor

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Self-aligned nanotube structures

Methods of modulating the morphology of epitaxial semiconductor mat...

Asymmetric high-k dielectric for reducing gate induced drain leakage

Field-effect transistors with a non-relaxed strained channel

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Hydroxyl group termination for nucleation of a dielectric metallic...

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Buffer layer for modulating Vt across devices

Asymmetric high-k dielectric for reducing gate induced drain leakage

Control of O-ingress into gate stack dielectric layer using oxygen...

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Hydroxyl group termination for nucleation of a dielectric metallic...

Silicon nitride layer deposited at low temperature to prevent gate...

Gate electrode with stabilized metal semiconductor alloy-semiconduc...

Gate electrode with stabilized metal semiconductor alloy-semiconduc...

Patents Applicationslast 30 patents

VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY

HETEROJUNCTION BIPOLAR TRANSISTOR

HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

MODULATION OF THE MORPHOLOGY OF EPITAXIAL SEMICONDUCTOR MATERIAL

FIELD-EFFECT TRANSISTORS WITH A NON-RELAXED STRAINED CHANNEL

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

CONTROL OF O-INGRESS INTO GATE STACK DIELECTRIC LAYER USING OXYGEN...

Silicon Nitride Layer Deposited at Low Temperature to Prevent Gate...

GATE ELECTRODE WITH STABILIZED METAL SEMICONDUCTOR ALLOY-SEMICONDUC...

GATE ELECTRODE WITH STABILIZED METAL SEMICONDUCTOR ALLOY-SEMICONDUC...

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

Effective Work Function Modulation by Metal Thickness and Nitrogen...