Clinton C. K. Kuo

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with over-program protection and method therefor
- Patent number 5,991,201
- Issue date Nov 23, 1999
- Motorola Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Static random access memory cell having a thin film transistor (TFT...
- Patent number 5,949,706
- Issue date Sep 7, 1999
- Motorola, Inc.
- Ko-Min Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell having a plural transistor transmission gate and method...
- Patent number 5,898,619
- Issue date Apr 27, 1999
- Ko-Min Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory process
- Patent number 5,474,947
- Issue date Dec 12, 1995
- Motorola Inc.
- Ko-Min Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static RAM with test features
- Patent number 5,428,574
- Issue date Jun 27, 1995
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for erasing a flash EEPROM
- Patent number 5,357,476
- Issue date Oct 18, 1994
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Block erasable flash EEPROM apparatus and method thereof
- Patent number 5,339,279
- Issue date Aug 16, 1994
- Motorola, Inc.
- Thomas R. Toms
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for fabricating an EEPROM cell having a tunnel opening whic...
- Patent number 5,273,923
- Issue date Dec 28, 1993
- Motorola, Inc.
- Ko-Min Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bias current generator circuit for a sense amplifier
- Patent number 5,168,466
- Issue date Dec 1, 1992
- Motorola, Inc.
- Clinton C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell
- Patent number 5,130,769
- Issue date Jul 14, 1992
- Motorola, Inc.
- Clinton C. K. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zener regulated programming circuit for a nonvolatile memory
- Patent number 5,103,425
- Issue date Apr 7, 1992
- Motorola, Inc.
- Clinton C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Static RAM with soft defect detection
- Patent number 5,034,923
- Issue date Jul 23, 1991
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
User programmable redundant memory
- Patent number 4,975,882
- Issue date Dec 4, 1990
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Single transistor cell for electrically-erasable programmable read-...
- Patent number 4,878,101
- Issue date Oct 31, 1989
- Ning Hsieh
- G11 - INFORMATION STORAGE
Information Patent Grant
Single transistor cell for electrically-erasable programmable read-...
- Patent number 4,766,473
- Issue date Aug 23, 1988
- Motorola, Inc.
- Clinton C. K. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intelligent write in an EEPROM with data and erase check
- Patent number 4,763,305
- Issue date Aug 9, 1988
- Motorola, Inc.
- Clinton Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Single transistor cell for electrically-erasable programmable read-...
- Patent number 4,758,986
- Issue date Jul 19, 1988
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual array EEPROM for high endurance capability
- Patent number 4,758,988
- Issue date Jul 19, 1988
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage circuit for use in programming memory circuits (EEPROMs)
- Patent number 4,565,932
- Issue date Jan 21, 1986
- Motorola, Inc.
- Clinton C. K. Kuo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Voltage and temperature compensated FET ring oscillator
- Patent number 4,547,749
- Issue date Oct 15, 1985
- Motorola, Inc.
- Clinton C. K. Kuo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Electrically erasable programmable read only memory cell
- Patent number 4,479,203
- Issue date Oct 23, 1984
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier using different threshold MOS devices
- Patent number 4,459,497
- Issue date Jul 10, 1984
- Motorola, Inc.
- Clinton C. K. Kuo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Circuit for applying a high voltage signal to a fusible link
- Patent number 4,417,154
- Issue date Nov 22, 1983
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM With bulk zero program capability
- Patent number 4,412,309
- Issue date Oct 25, 1983
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with permanent array division capability
- Patent number 4,408,305
- Issue date Oct 4, 1983
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Column and row erasable EEPROM
- Patent number 4,408,306
- Issue date Oct 4, 1983
- Motorola, Inc.
- Clinton C. K. Kuo
- G11 - INFORMATION STORAGE

Clinton C. K. Kuo

Person

Patents Grantslast 30 patents

Non-volatile memory with over-program protection and method therefor

Static random access memory cell having a thin film transistor (TFT...

Memory cell having a plural transistor transmission gate and method...

Nonvolatile memory process

Static RAM with test features

Apparatus and method for erasing a flash EEPROM

Block erasable flash EEPROM apparatus and method thereof

Process for fabricating an EEPROM cell having a tunnel opening whic...

Bias current generator circuit for a sense amplifier

Nonvolatile memory cell

Zener regulated programming circuit for a nonvolatile memory

Static RAM with soft defect detection

User programmable redundant memory

Single transistor cell for electrically-erasable programmable read-...

Single transistor cell for electrically-erasable programmable read-...

Intelligent write in an EEPROM with data and erase check

Single transistor cell for electrically-erasable programmable read-...

Dual array EEPROM for high endurance capability

High voltage circuit for use in programming memory circuits (EEPROMs)

Voltage and temperature compensated FET ring oscillator

Electrically erasable programmable read only memory cell

Sense amplifier using different threshold MOS devices

Circuit for applying a high voltage signal to a fusible link

EEPROM With bulk zero program capability

Memory with permanent array division capability

Column and row erasable EEPROM